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2SD2561_01 参数 Datasheet PDF下载

2SD2561_01图片预览
型号: 2SD2561_01
PDF下载: 下载PDF文件 查看货源
内容描述: 硅NPN三重扩散平面晶体管 [Silicon NPN Triple Diffused Planar Transistor]
分类和应用: 晶体晶体管
文件页数/大小: 1 页 / 29 K
品牌: SANKEN [ SANKEN ELECTRIC ]
   
Equivalent circuit
C
Darlington
2SD2561
s
Electrical Characteristics
Symbol
I
CBO
I
EBO
V
(BR)CEO
h
FE
V
CE
(sat)
V
BE
(sat)
f
T
C
OB
Conditions
V
CB
=150V
V
EB
=5V
I
C
=30mA
V
CE
=4V, I
C
=10A
I
C
=10A, I
B
=10mA
I
C
=10A, I
B
=10mA
V
CE
=12V, I
E
=–2A
V
CB
=10V, f=1MHz
Ratings
100
max
100
max
150
min
5000
min
2.5
max
3.0
max
70
typ
120
typ
V
V
MHz
pF
20.0min
4.0max
2
3
B
( 7 0
Ω)
E
Silicon NPN Triple Diffused Planar Transistor
(Complement to type 2SB1648)
s
Absolute maximum ratings
(Ta=25°C)
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
Tj
T
stg
Ratings
150
150
5
17
1
200(Tc=25°C)
150
–55 to +150
Unit
V
V
V
A
A
W
°C
°C
Application :
Audio, Series Regulator and General Purpose
(Ta=25°C)
Unit
External Dimensions
MT-200
36.4
±0.3
24.4
±0.2
2-ø3.2
±0.1
9
7
21.4
±0.3
2.1
6.0
±0.2
µ
A
µ
A
V
a
b
1.05
+0.2
-0.1
5.45
±0.1
B
C
E
5.45
±0.1
0.65
+0.2
-0.1
3.0
+0.3
-0.1
∗h
FE
Rank
O(5000 to 12000), P(6500 to 20000), Y(15000 to 30000)
s
Typical Switching Characteristics (Common Emitter)
V
CC
(V)
40
R
L
(Ω)
4
I
C
(A)
10
V
BB1
(V)
10
V
BB2
(V)
–5
I
B1
(mA)
10
I
B2
(mA)
–10
t
on
(
µ
s)
0.8typ
t
stg
(
µ
s)
4.0typ
t
f
(
µ
s)
1.2typ
Weight : Approx 18.4g
a. Part No.
b. Lot No.
I
C
– V
CE
Characteristics
(Typical)
C ol l e c t o r - E m i t te r S at u r a t i o n Vo lt a g e V
C E(s a t)
(V )
17
50mA
V
CE
(sat) – I
B
Characteristics
(Typical)
3
I
C
– V
B E
Temperature Characteristics
(Typical)
17
15
( V
C E
= 4V )
10mA
2m
3m
A
1 .5 m A
15
A
1 .0 m A
Co l l e c t o r Cu r r en t I
C
( A)
0 .8 m A
2
10
C o l l e c t o r C u r r e n t I
C
( A )
10
mp)
e Te
(Cas
25˚C
p)
I
C
= . 15 A
I
C
= .1 0 A
1
I
C
= .5 A
125
0
0
2
4
6
0
0 .2
0.5
1
5
10
50
100 200
0
0
1
–30˚
C (C
˚C
5
I
B
=0.3mA
5
(Ca
ase T
se
emp)
Tem
0.5mA
2
2.6
Col l e ct or - Em it t er Vo l t ag e V
C E
( V)
Bas e C ur r en t I
B
( m A)
B a s e - E m i t t o r Vo l ta g e V
B E
( V)
(V
C E
= 4 V )
50000
D C C u r r e n t Gai n h
FE
D C C u rr en t G ai n h
FE
50000
12
5˚C
( V
C E
= 4 V)
Transient Thermal Resistance
θ
j-a
( ˚ C/ W )
h
F E
– I
C
Characteristics
(Typical)
h
F E
– I
C
Temperature Characteristics
(Typical)
θ
j - a
– t Characteristics
2
Typ
10000
5000
1
10000
5000
25
˚C
0.5
–30
˚C
1000
500
02
0.5
1
C ol l e ct o r C u rren t I
C
(A )
5
10
17
1000
500
02
0.5
1
C o ll e ct o r Cu r r e nt I
C
( A)
5
10
17
0.1
1
10
100
Time t(ms)
1 0 00 2 0 0 0
f
T
– I
E
Characteristics
(Typical)
(V
C E
=1 2 V)
80
50
Safe Operating Area
(Single Pulse)
200
10
Pc – Ta Derating
Cu t-o ff F r e q u e nc y f
T
( M H
Z
)
60
Co lle cto r C ur re nt I
C
( A )
10
5
0m
M ax im um P ow e r Di s s i p a ti o n P
C
( W )
10
DC
s
m
s
160
W
ith
In
fin
120
ite
he
40
at
si
1
0.5
nk
80
20
Without Heatsink
Natural Cooling
40
Without Heatsink
0
25
50
75
10 0
125
150
0.1
0
–0.02
–0 . 1
–1
Emi t t e r C ur ren t I
E
(A)
–10
0.05
3
5
10
50
10 0
2 00
5
0
Col l ec t or - Em i tt e r Vol t ag e V
C E
( V)
Am b i e n t T e m p er a t u r e T a( ˚ C )
157