Equivalent circuit
C
Darlington
2SD2390
s
Electrical Characteristics
Symbol
I
CBO
I
EBO
V
(BR)CEO
h
FE
V
CE
(sat)
V
BE
(sat)
f
T
C
OB
Conditions
V
CB
=160V
V
EB
=5V
I
C
=30mA
V
CE
=4V, I
C
=7A
I
C
=7A, I
B
=7mA
I
C
=7A, I
B
=7mA
V
CE
=12V, I
E
=–2A
V
CB
=10V, f=1MHz
Ratings
100
max
100
max
150
min
5000
min
∗
2.5
max
3.0
max
55
typ
95
typ
V
V
MHz
pF
20.0min
4.0max
2
3
1.05
+0.2
-0.1
5.45
±0.1
B
C
E
5.45
±0.1
B
( 7 0Ω )
E
Silicon NPN Triple Diffused Planar Transistor
(Complement to type 2SB1560)
s
Absolute maximum ratings
(Ta=25°C)
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
Tj
T
stg
Ratings
160
150
5
10
1
100(Tc=25°C)
150
–55 to +150
Unit
V
V
V
A
A
W
°C
°C
Application :
Audio, Series Regulator and General Purpose
(Ta=25°C)
Unit
5.0
±0.2
2.0
1.8
External Dimensions
MT-100(TO3P)
15.6
±0.4
9.6
4.8
±0.2
2.0
±0.1
µ
A
µ
A
19.9
±0.3
V
4.0
a
b
ø3.2
±0.1
0.65
+0.2
-0.1
1.4
∗h
FE
Rank
O(5000 to 12000), P(6500 to 20000), Y(15000 to 30000)
s
Typical Switching Characteristics (Common Emitter)
V
CC
(V)
70
R
L
(Ω)
10
I
C
(A)
7
V
BB1
(V)
10
V
BB2
(V)
–5
I
B1
(mA)
7
I
B2
(mA)
–7
t
on
(
µ
s)
0.5typ
t
stg
(
µ
s)
10.0typ
t
f
(
µ
s)
1.1typ
Weight : Approx 2.0g
a. Part No.
b. Lot No.
I
C
– V
C E
Characteristics
(Typical)
C o l l e c t o r - Em i t t e r Sa t u r a ti o n V ol t ag e V
C E(sa t)
(V )
10mA
2.
5m
A
V
CE
(sat) – I
B
Characteristics
(Typical)
3
I
C
– V
B E
Temperature Characteristics
(Typical)
10
( V
CE
= 4V )
10
A
2m
1 .5 m A
8
C o l l e c t o r Cu r r e n t I
C
( A )
1. 2m A
1mA
8
C o l l e c to r C u r r e n t I
C
( A )
2
6
0.8m A
6
I
C
= 10 A
I
C
= 7A
1
I
C
= 5A
mp)
(Cas
e Te
25˚C
–30˚
Tem
se
0
0
2
4
6
0
0.2
0.5
1
5
10
50
100 200
0
0
125
˚C
2
2
1
C (C
I
B
=0.4mA
(Ca
ase
Tem
4
4
p)
0.6mA
p)
2
2.5
Co l l ect o r - Em i t t er Vo l t ag e V
C E
(V)
Ba se Cu r r e n t I
B
( m A)
Ba s e- Em i t t or V o l t a ge V
BE
( V )
h
F E
– I
C
Characteristics
(Typical)
( V
CE
= 4 V )
40000
DC C u r r e nt Ga i n h
FE
h
F E
– I
C
Temperature Characteristics
(Typical)
( V
C E
= 4 V)
70000
50000
12 5 ˚ C
Transient Thermal Resistance
θ
j -a
( ˚C / W )
3
θ
j - a
– t Characteristics
Typ
10000
5000
D C Cu rr en t Ga i n h
FE
1
0. 5
10000
5000
2 5˚ C
– 30 ˚ C
1000
1000
02
0. 5
1
C o ll e ct o r C urr en t I
C
(A)
5
10
500
0.2
0. 5
1
Co l le c to r Cu r r e n t I
C
( A)
5
10
0. 1
1
5
10
50 1 0 0
T i m e t( m s )
5 0 0 1 00 0 20 0 0
f
T
– I
E
Characteristics
(Typical)
(V
C E
=1 2 V)
100
30
Safe Operating Area
(Single Pulse)
100
10
Pc – Ta Derating
80
C ut- off F r e q u e n c y f
T
( M H
Z
)
Co llec t o r C u r r e n t I
C
( A)
10
5
DC
10
0m
Ma x im um P ow e r D i s s i p a ti o n P
C
( W )
m
s
W
s
ith
In
60
Typ
fin
ite
he
1
0.5
Without Heatsink
Natural Cooling
0.1
50
at
si
nk
40
20
0
–0. 02
–0 . 1
–1
Emi t t e r Cur ren t I
E
(A )
–10
0 .0 5
3
5
10
50
1 00
20 0
3.5
0
Without Heatsink
0
25
50
75
1 00
12 5
150
C ol l ec t or - Em i tt e r V ol t ag e V
C E
( V)
A m b i e n t T em p e r at u r e T a ( ˚ C )
150
SANKEN [ SANKEN ELECTRIC ]
