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2SD2389_01 参数 Datasheet PDF下载

2SD2389_01图片预览
型号: 2SD2389_01
PDF下载: 下载PDF文件 查看货源
内容描述: 硅NPN三重扩散平面晶体管 [Silicon NPN Triple Diffused Planar Transistor]
分类和应用: 晶体晶体管
文件页数/大小: 1 页 / 29 K
品牌: SANKEN [ SANKEN ELECTRIC ]
   
Equivalent circuit
C
Darlington
s
Absolute maximum ratings
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
Tj
T
stg
Ratings
160
150
5
8
1
80(Tc=25°C)
150
–55 to +150
2SD2389
s
Electrical Characteristics
Symbol
I
CBO
I
EBO
V
(BR)CEO
h
FE
V
CE
(sat)
V
BE
(sat)
f
T
C
OB
Conditions
V
CB
=160V
V
EB
=5V
I
C
=30mA
V
CE
=4V, I
C
=6A
I
C
=6A, I
B
=6mA
I
C
=6A, I
B
=6mA
V
CE
=12V, I
E
=–1A
V
CB
=10V, f=1MHz
Ratings
100
max
100
max
150
min
5000
min
2.5
max
3.0
max
80
typ
85
typ
V
V
MHz
pF
20.0min
4.0max
2
3
1.05
+0.2
-0.1
5.45
±0.1
B
C
E
5.45
±0.1
B
( 7 0Ω )
E
Silicon NPN Triple Diffused Planar Transistor
(Complement to type 2SB1559)
(Ta=25°C)
Unit
V
V
V
A
A
W
°C
°C
Application :
Audio, Series Regulator and General Purpose
(Ta=25°C)
Unit
5.0
±0.2
2.0
1.8
External Dimensions
MT-100(TO3P)
15.6
±0.4
9.6
4.8
±0.2
2.0
±0.1
µ
A
µ
A
19.9
±0.3
V
4.0
a
b
ø3.2
±0.1
0.65
+0.2
-0.1
1.4
∗h
FE
Rank
O(5000 to 12000), P(6500 to 20000), Y(15000 to 30000)
s
Typical Switching Characteristics (Common Emitter)
V
CC
(V)
60
R
L
(Ω)
10
I
C
(A)
6
V
BB1
(V)
10
V
BB2
(V)
–5
I
B1
(mA)
6
I
B2
(mA)
–6
t
on
(
µ
s)
0.6typ
t
stg
(
µ
s)
10.0typ
t
f
(
µ
s)
0.9typ
Weight : Approx 2.0g
a. Part No.
b. Lot No.
I
C
– V
CE
Characteristics
(Typical)
5m
2.
A
0m
A
V
C E
( sat ) – I
B
Characteristics
(Typical)
C o l l e c t o r - E m i t t er S a tu r a t i o n Vo lt a g e V
C E(sa t)
(V )
3
I
C
– V
B E
Temperature Characteristics
(Typical)
8
( V
CE
=4 V )
10mA
8
2.
1.
8m
A
1 .3 m A
A
1.5m
C ol l e c t o r C ur r en t I
C
( A )
0.8 mA
2
4
I
C
= 8 A
I
C
= 6 A
1
I
C
= 4 A
C ol l e c t o r C u r r e nt I
C
( A)
6
1.0 mA
6
4
mp)
e Te
e Te
(Cas
25˚C
I
B
=0.3mA
125
0
0
2
4
6
0
0.2
0.5
1
5
10
50
100 200
0
0
1
Ba s e - E m i tt o r V ol t ag e V
B E
( V)
–30˚
C (C
˚C (
2
2
Cas
ase T
e
mp)
0.5mA
mp)
2
C ol l ec t or - Emi t t e r V ol ta ge V
C E
(V)
B as e C ur r en t I
B
( m A)
(V
C E
=4 V)
40000
DC C ur r e nt Ga i n h
FE
D C Cu rr en t Ga i n h
F E
50000
12 5˚ C
( V
C E
= 4 V)
Transient Thermal Resistance
θ
j -a
( ˚ C/ W )
h
F E
– I
C
Characteristics
(Typical)
h
F E
– I
C
Temperature Characteristics
(Typical)
θ
j - a
– t Characteristics
4
Typ
10000
5000
10000
5000
25˚C
–3 0 ˚ C
1
0. 5
1000
1000
02
0.5
1
Co l l ect or C u rre nt I
C
(A )
5
8
500
0.2
0.5
1
C o ll e ct o r Cu r r e n t I
C
( A)
5
8
0. 2
1
5
10
50 100
Time t(ms)
50 0 10 0 0 2 0 0 0
f
T
– I
E
Characteristics
(Typical)
(V
C E
=1 2 V )
120
20
10
100
C ut- off F r e q u e n c y f
T
( M H
Z
)
Safe Operating Area
(Single Pulse)
80
10
10
0m
Pc – Ta Derating
m
Typ
80
C olle c to r C u r r e n t I
C
( A )
5
D
C
Ma x im um P ow e r D i s s i p a t i on P
C
( W )
s
s
60
W
ith
In
fin
ite
1
0.5
he
60
40
at
si
nk
40
20
0.1
0.05
Without Heatsink
Natural Cooling
20
Without Heatsink
5
10
50
1 00
20 0
3 .5
0
0
25
50
75
10 0
125
150
0
–0.02
–0 . 1
–1
–8
0.03
3
Em i t t er C urre nt I
E
(A )
Co l le c to r - E m it t er Vo l ta ge V
C E
( V)
1 50
A m b i e n t T em p er at u r e T a ( ˚ C )
149