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2SD2081_01 参数 Datasheet PDF下载

2SD2081_01图片预览
型号: 2SD2081_01
PDF下载: 下载PDF文件 查看货源
内容描述: 硅NPN三重扩散平面晶体管 [Silicon NPN Triple Diffused Planar Transistor]
分类和应用: 晶体晶体管
文件页数/大小: 1 页 / 27 K
品牌: SANKEN [ SANKEN ELECTRIC ]
   
Darlington
2SD2081
s
Electrical Characteristics
Symbol
I
CBO
I
EBO
V
(BR)CEO
h
FE
V
CE
(sat)
V
BE
(sat)
f
T
C
OB
Conditions
V
CB
=120V
V
EB
=6V
I
C
=10mA
V
CE
=4V, I
C
=5A
I
C
=5A, I
B
=5mA
I
C
=5A, I
B
=5mA
V
CE
=12V, I
E
=–0.5A
V
CB
=10V, f=1MHz
Ratings
10
max
10
max
120
min
2000
min
1.5
max
2.0
max
60
typ
95
typ
V
V
MHz
pF
13.0min
Equivalent
circuit
B
C
(2kΩ) (200Ω) E
Silicon NPN Triple Diffused Planar Transistor
(Complement to type 2SB1259)
s
Absolute maximum ratings
(Ta=25°C)
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
Tj
T
stg
Ratings
120
120
6
10(
Pulse
15)
1
30(Tc=25°C)
150
–55 to +150
Unit
V
V
V
A
A
W
°C
°C
Application :
Driver for Solenoid, Motor and General Purpose
(Ta=25°C)
Unit
External Dimensions
FM20(TO220F)
4.0
±0.2
10.1
±0.2
4.2
±0.2
2.8 c0.5
µ
A
V
16.9
±0.3
8.4
±0.2
mA
1.35
±0.15
1.35
±0.15
0.85
+0.2
-0.1
0.45
+0.2
-0.1
2.54
2.2
±0.2
2.4
±0.2
2.54
3.9
B C E
±0.2
0.8
±0.2
a
b
ø3.3
±0.2
Weight : Approx 2.0g
a. Part No.
b. Lot No.
I
C
– V
C E
Characteristics
(Typical)
Co l l e c t o r - Em i t t e r Sa t u r a ti o n V o lt a ge V
CE (s at)
(V )
15
50
V
CE
(sat) – I
B
Characteristics
(Typical)
3
I
C
– V
B E
Temperature Characteristics
(Typical)
10
( V
C E
=4 V )
10
m
mA
5mA
A
3mA
8
2
C o l l e c t o r C u r r e n t I
C
( A )
Co l l e c t o r Cu r r e n t I
C
( A)
10
2m A
6
1mA
p)
mp)
25˚C (C
ase Te
I
B
=0.5mA
0
0
1
2
3
4
5
6
0
0.2
0.5
1
5
10
50
100 200
0
0
125˚
2
1
–30˚C (C
1A
C (C
ase
5
0 .7 m A
1
5A
ase Tem
4
Tem
p)
I
C
= 10 A
2
3
Co ll e ct o r- Em i t t er Vo l t ag e V
C E
(V )
Bas e C ur r en t I
B
( m A)
Ba s e - E m i t to r V ol t ag e V
BE
( V)
h
F E
– I
C
Characteristics
(Typical)
(V
C E
= 4 V )
20000
10000
DC Cu r r e n t Ga i n h
FE
5000
h
F E
– I
C
Temperature Characteristics
(Typical)
( V
C E
= 4 V)
20000
10000
DC Cu r r e n t Ga i n h
FE
5000
Transient Thermal Resistance
θ
j -a
( ˚ C / W )
5
θ
j - a
– t Characteristics
Typ
12
1000
500
5˚C
25
˚C
0˚C
1000
500
1
–3
0.5
100
50
30
0.03
100
50
30
0.03
0.1
0. 5
1
5
10
0 .1
0.5
1
5
10
0.2
1
10
Time t(ms)
1 00
1000
C o ll e ct o r C urr en t I
C
(A )
C ol l ec t or C ur r e nt I
C
( A)
f
T
– I
E
Characteristics
(Typical)
( V
C E
=1 2 V)
120
30
Safe Operating Area
(Single Pulse)
30
10
m
Pc – Ta Derating
Typ
100
C ut- off F r e q u e n c y f
T
( M H
Z
)
C olle c tor Cu r r e n t I
C
(A )
10
5
1m
s
s
M ax im um P ow e r Di s s i p a ti o n P
C
( W )
W
ith
80
DC
20
In
fin
ite
he
60
at
1
0.5
Without Heatsink
Natural Cooling
0.1
si
nk
40
10
20
Without Heatsink
2
5
10
50
1 00
20 0
0
0
–0.05 –0.1
–0 . 5
–1
–5
–10
0 .0 5
3
0
25
50
75
10 0
125
150
Em i t t er Cur ren t I
E
(A)
Co ll e ct o r - Em i t t er Vo lt a ge V
C E
( V)
A m b i e n t T em p er at u r e T a ( ˚ C )
145