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2SD2045_01 参数 Datasheet PDF下载

2SD2045_01图片预览
型号: 2SD2045_01
PDF下载: 下载PDF文件 查看货源
内容描述: 硅NPN三重扩散平面晶体管 [Silicon NPN Triple Diffused Planar Transistor]
分类和应用: 晶体晶体管
文件页数/大小: 1 页 / 30 K
品牌: SANKEN [ SANKEN ELECTRIC ]
   
Darlington
s
Absolute maximum ratings
Symbol
V
CBO
V
CEO
I
C
I
B
P
C
Tj
T
stg
Ratings
120
120
6
6(
Pulse
10)
1
50(Tc=25°C)
150
–55 to +150
2SD2045
s
Electrical Characteristics
Symbol
I
CBO
I
EBO
V
(BR)CEO
h
FE
V
CE
(sat)
V
BE
(sat)
f
T
C
OB
Conditions
V
CB
=120V
V
EB
=6V
I
C
=10mA
V
CE
=2V, I
C
=3A
I
C
=3A, I
B
=3mA
I
C
=3A, I
B
=3mA
V
CE
=12V, I
E
=–1A
V
CB
=10V, f=1MHz
Ratings
10
max
10
max
120
min
2000
min
1.5
max
2.0
max
50
typ
70
typ
V
V
16.2
Equivalent
circuit
B
C
(2.5kΩ)(200Ω) E
Silicon NPN Triple Diffused Planar Transistor
(Ta=25°C)
Unit
V
V
V
A
A
W
°C
°C
Application :
Driver for Solenoid, Motor and General Purpose
(Ta=25°C)
Unit
External Dimensions
FM100(TO3PF)
0.8
±0.2
15.6
±0.2
5.5
±0.2
3.45
±0.2
5.5
ø3.3
±0.2
1.6
µ
A
mA
23.0
±0.3
.
V
EBO
V
9.5
±0.2
a
b
MHz
pF
1.75
2.15
1.05
+0.2
-0.1
5.45
±0.1
1.5
4.4
5.45
±0.1
1.5
0.65
+0.2
-0.1
3.3
0.8
s
Typical Switching Characteristics (Common Emitter)
V
CC
(V)
30
R
L
(Ω)
10
I
C
(A)
3
V
BB1
(V)
10
V
BB2
(V)
–5
I
B1
(mA)
3
I
B2
(mA)
–3
t
on
(
µ
s)
0.5typ
t
stg
(
µ
s)
5.5typ
t
f
(
µ
s)
1.5typ
3.35
B
C
E
Weight : Approx 2.0g
a. Part No.
b. Lot No.
I
C
– V
C E
Characteristics
(Typical)
6
20mA
V
C E
(sat ) – I
B
Characteristics
(Typical)
C o l l e c t or - Em i t t e r Sa t u r at i on V ol t ag e V
C E(s a t)
(V )
3
I
C
– V
B E
Temperature Characteristics
(Typical)
( V
C E
=2 V )
6
A
A
5m
2m
1m
A
0.7m
A
5
C ol l e c t o r C ur r en t I
C
( A)
5
Co l l e c t o r Cu r r e n t I
C
( A)
4
0.5m
A
2
4
p)
Cas
2
1
2
25˚C
2A
1
˚C (
1
0
0
1
2
3
4
5
6
0
0 .1
0.5
1
5
10
50
100
0
0
1
B as e - Em i t t o r Vo l t a g e V
BE
( V )
–30˚C
125
(Case
4A
(Cas
e Te
eT
I
C
=8A
mp)
Temp
)
3
I
B
= 0
.4m
A
em
3
3.0
2
Col l e ct or - Em it t e r V ol ta ge V
C E
(V)
Ba s e C ur r en t I
B
( m A)
h
FE
– I
C
Characteristics
(Typical)
(V
C E
=2 V )
10000
5000
D C C ur r e n t Gai n h
FE
h
F E
– I
C
Temperature Characteristics
(Typical)
( V
C E
= 2 V)
10000
5000
Transient Thermal Resistance
θ
j -a
( ˚ C / W )
5
θ
j - a
– t Characteristics
Typ
DC C ur r e nt Ga i n h
F E
12
1000
500
C
1000
500
˚C
25
C
–3
1
0. 5
100
50
0.03
0. 1
0. 5
1
5 6
100
50
0.03
0. 1
0. 5
1
56
0. 2
1
10
Time t(ms)
100
10 0 0
Co l l ect o r Cu rre nt I
C
( A)
C ol l ec t or C ur r en t I
C
( A)
f
T
– I
E
Characteristics
(Typical)
(V
C E
= 1 2 V )
120
20
Safe Operating Area
(Single Pulse)
50
Pc – Ta Derating
100
C ut- off F r e q u e n c y f
T
( M H
Z
)
5
C olle c to r C u r r e n t I
C
( A )
80
Ma x imu m P ow e r D i s s i p a t i o n P
C
(W )
Typ
10
1m
s
40
W
ith
10
ms
DC
In
30
fin
ite
60
1
0.5
Without Heatsink
Natural Cooling
0.1
he
at
si
20
nk
40
20
10
Without Heatsink
0
0
–0.05 –0.1
– 0. 5
–1
–5 –6
0 .0 5
3
5
10
50
10 0
2 00
0
25
50
75
10 0
125
150
Emi t t e r Cu rre nt I
E
( A)
Co l le c to r - Em it t er Vo l ta ge V
C E
( V)
A m b i e n t T e m p e r a tu r e T a ( ˚ C )
144