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2SD2017_01 参数 Datasheet PDF下载

2SD2017_01图片预览
型号: 2SD2017_01
PDF下载: 下载PDF文件 查看货源
内容描述: 硅NPN三重扩散平面晶体管 [Silicon NPN Triple Diffused Planar Transistor]
分类和应用: 晶体晶体管
文件页数/大小: 1 页 / 30 K
品牌: SANKEN [ SANKEN ELECTRIC ]
   
Darlington
2SD2017
s
Electrical Characteristics
Symbol
I
CBO
I
EBO
V
(BR)CEO
h
FE
V
CE
(sat)
V
BE
(sat)
f
T
C
OB
Conditions
V
CB
=300V
V
EB
=20V
I
C
=25mA
V
CE
=2V, I
C
=2A
I
C
=2A, I
B
=2mA
I
C
=2A, I
B
=2mA
V
CE
=12V, I
E
=–1A
V
CB
=10V, f=1MHz
Ratings
100
max
10
max
250
min
2000
min
1.5
max
2.0
max
20
typ
65
typ
V
V
MHz
pF
13.0min
Equivalent
circuit
B
C
(4k
)
E
Silicon NPN Triple Diffused Planar Transistor
s
Absolute maximum ratings
(Ta=25°C)
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
Tj
T
stg
Ratings
300
250
20
6
1
35(Tc=25°C)
150
–55 to +150
Unit
V
V
V
A
A
W
°C
°C
Application :
Driver for Solenoid, Relay and Motor and General Purpose
(Ta=25°C)
Unit
External Dimensions
FM20(TO220F)
4.0
±0.2
10.1
±0.2
4.2
±0.2
2.8 c0.5
µ
A
V
16.9
±0.3
8.4
±0.2
mA
1.35
±0.15
1.35
±0.15
0.85
+0.2
-0.1
0.45
+0.2
-0.1
2.54
2.2
±0.2
2.4
±0.2
s
Typical Switching Characteristics (Common Emitter)
V
CC
(V)
100
R
L
(Ω)
50
I
C
(A)
2
V
BB1
(V)
10
V
BB2
(V)
–5
I
B1
(mA)
5
I
B2
(mA)
–10
t
on
(
µ
s)
0.6typ
t
stg
(
µ
s)
16.0typ
t
f
(
µ
s)
3.0typ
2.54
3.9
B C E
I
C
– V
CE
Characteristics
(Typical)
m
A
V
CE
( sat ) – I
B
Characteristics
(Typical)
C o l l e c t o r - E m i t t er S a tu r a t i o n Vo lt a g e V
C E( sat)
( V )
3
I
C
– V
B E
Temperature Characteristics
(Typical)
( V
CE
= 2 V )
6
6
40
20
mA
8m
A
4m
A
5
C o l l e c t o r Cu r r e n t I
C
( A )
5
C o l l e c t or C u r r e n t I
C
( A)
2mA
4
1mA
2
4
3
Tem
p)
(Ca
se
˚C
3
±0.2
0.8
±0.2
a
b
ø3.3
±0.2
Weight : Approx 2.0g
a. Part No.
b. Lot No.
I
C
=8A
1
I
C
=3A
I
C
=1A
1
25˚C
(Cas
2
I
B
= 0 .4
mA
2
1
0
0
1
2
3
4
5
6
0
0 . 2 0 .5
1
5
10
50 10 0
50 0 1 00 0
0
0
1
Ba s e - E m i tt o r V ol t ag e V
B E
( V)
–30˚C
125
e Te
mp)
(Case
Temp
)
2
Co l l ec t or - Emi t t er V ol ta ge V
C E
(V )
Ba se Cu r r e nt I
B
( m A)
h
F E
– I
C
Characteristics
(Typical)
(V
C E
=2 V)
10000
5000
D C C u r r e n t Gai n h
F E
h
F E
– I
C
Temperature Characteristics
(Typical)
( V
C E
= 2 V)
10000
DC C u r r e nt Ga i n h
FE
5000
Transient Thermal Resistance
θ
j -a
( ˚C / W )
5
θ
j- a
– t Characteristics
Typ
1
C
25˚
25
˚C
1000
500
1000
500
–3
0˚C
1
100
50
30
0.03
100
50
30
0.03
0. 5
0. 3
0. 1
0. 5
1
5 6
0 .1
0 .5
1
56
1
5
10
50
Time t(ms)
100
500 1000
C ol l ec t or Cur ren t I
C
(A )
C o ll e ct o r C u r r e nt I
C
( A)
f
T
– I
E
Characteristics
(Typical)
( V
C E
=1 2 V)
30
20
10
Safe Operating Area
(Single Pulse)
35
P c – Ta Derating
Natural Cooling
Silicone Grease
Heatsink: Aluminum
in mm
Typ
C ut- off F r eq u e n c y f
T
( M H
Z
)
Co lle ct o r C u r re n t I
C
( A )
5
m
D.
s
C
(T
20
C
=
25
C)
Ma x imu m P ow e r D i s s i p a t i on P
C
( W )
10
30
1m
s
W
ith
1
0.5
20
In
fin
ite
he
1 5 0 x 1 5 0x 2
1 0 0 x 1 0 0x 2
10
5 0 x 5 0x 2
Without Heatsink
at
si
10
nk
0.1
0 .0 5
0
–0.02 –0.05 –0 . 1
0 .0 2
3
Without Heatsink
Natural Cooling
– 0. 5
–1
–5 –6
5
10
50
10 0
3 00
2
0
0
25
50
75
1 00
125
15 0
Em i t t er Cur ren t I
E
(A)
Co l l ec to r - Em i tt er Vo l ta g e V
C E
( V)
A m b i en t T e m p e r a tu r e T a ( ˚ C )
143