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2SD2014_01 参数 Datasheet PDF下载

2SD2014_01图片预览
型号: 2SD2014_01
PDF下载: 下载PDF文件 查看货源
内容描述: 硅NPN三重扩散平面晶体管 [Silicon NPN Triple Diffused Planar Transistor]
分类和应用: 晶体晶体管
文件页数/大小: 1 页 / 30 K
品牌: SANKEN [ SANKEN ELECTRIC ]
   
Darlington
2SD2014
s
Electrical Characteristics
Symbol
I
CBO
I
EBO
V
(BR)CEO
h
FE
V
CE
(sat)
V
BE
(sat)
f
T
C
OB
Conditions
V
CB
=120V
V
EB
=6V
I
C
=10mA
V
CE
=2V, I
C
=3A
I
C
=3A, I
B
=3mA
I
C
=3A, I
B
=3mA
V
CE
=12V, I
E
=–0.1A
V
CB
=10V, f=1MHz
Ratings
10
max
10
max
80
min
2000
min
1.5
max
2.0
max
75
typ
45
typ
V
V
13.0min
Equivalent
circuit
B
C
(3kΩ) (200Ω) E
Silicon NPN Triple Diffused Planar Transistor
(Complement to type 2SB1257)
s
Absolute maximum ratings
(Ta=25°C)
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
Tj
T
stg
Ratings
120
80
6
4
0.5
25(Tc=25°C)
150
–55 to +150
Unit
V
V
V
A
A
W
°C
°C
Application :
Driver for Solenoid, Relay and Motor, Series Regulator, and General Purpose
(Ta=25°C)
Unit
External Dimensions
FM20(TO220F)
4.0
±0.2
10.1
±0.2
4.2
±0.2
2.8 c0.5
µ
A
V
16.9
±0.3
8.4
±0.2
mA
MHz
pF
1.35
±0.15
1.35
±0.15
0.85
+0.2
-0.1
0.45
+0.2
-0.1
2.54
2.2
±0.2
2.4
±0.2
s
Typical Switching Characteristics (Common Emitter)
V
CC
(V)
30
R
L
(Ω)
10
I
C
(A)
3
V
BB1
(V)
10
V
BB2
(V)
–5
I
B1
(mA)
10
I
B2
(mA)
–10
t
on
(
µ
s)
1.0typ
t
stg
(
µ
s)
4.0typ
t
f
(
µ
s)
1.5typ
2.54
3.9
B C E
I
C
– V
CE
Characteristics
(Typical)
1.0
V
C E
( sat ) – I
B
Characteristics
(Typical)
C o l l e c t or - Em i t t e r Sa t u r at i on V ol t ag e V
CE (s at)
( V )
3
I
C
– V
B E
Temperature Characteristics
(Typical)
( V
CE
= 4 V )
4
4
A
mA
0.8m
A
I
B
=2
0m
C ol l e c t o r C ur r en t I
C
( A)
0 .5 m A
2
Co l l e c t o r Cu r r e n t I
C
( A )
3
0 .6 m A
3
e Tem
p)
±0.2
0.8
±0.2
a
b
ø3.3
±0.2
Weight : Approx 2.0g
a. Part No.
b. Lot No.
p)
ase Tem
25˚C (C
1
0.3mA
1
0
0
1
2
3
4
0
0 .2
1
5
10
50
1 00
0
0
125˚C
1
1A
1
B a s e - Em i t t o r Vo l ta g e V
BE
( V )
–30˚C (C
2A
3A
(Cas
I
C
=4 A
ase Tem
2
0. 4m A
2
p)
2
C ol l ec t or - Emi t t er Vo l ta ge V
C E
(V )
Ba se Cu r r e nt I
B
( m A)
h
FE
– I
C
Characteristics
(Typical)
( V
CE
= 4 V )
20000
10000
D C C ur r e n t Gai n h
F E
5000
D C C ur re n t Gai n h
FE
h
F E
– I
C
Temperature Characteristics
(Typical)
( V
C E
= 4 V)
20000
10000
5000
125
˚C
Transient Thermal Resistance
θ
j -a
( ˚C /W )
θ
j - a
– t Characteristics
5
Typ
1000
500
1000
500
˚C
25
˚C
30
1
100
50
30
0.03
0. 1
0.5
1
4
100
50
30
0 .0 3
0. 1
0. 5
1
4
0. 5
1
5
10
50
Time t(ms)
10 0
500 1000
Co l le ct o r Curre nt I
C
(A )
C ol l ec t or C ur r e nt I
C
( A)
f
T
– I
E
Characteristics
(Typical)
( V
CE
= 1 0 V )
120
10
5
Safe Operating Area
(Single Pulse)
25
10
0m
s
P c – Ta Derating
Natural Cooling
Silicone Grease
Heatsink: Aluminum
in mm
1m
m
s
30
100
C ut- off F r eq u e n c y f
T
( M H
Z
)
C olle c to r C u r r e n t I
C
( A )
Ma x imu m P ow e r D i s s i p a t i on P
C
( W )
10
s
0
µ
s
20
DC
80
W
ith
In
Typ
60
1
0.5
150x150x2
1 00x
1 0
10
0x
fin
ite
he
2
at
si
nk
40
Without Heatsink
Natural Cooling
0.1
0 .0 5
50x50x2
20
Without Heatsink
2
0
0
–0.02
–0.0 5 – 0. 1
– 0. 5
–1
–4
3
5
10
50
1 00
0
25
50
75
100
12 5
15 0
Em i t t er Cur ren t I
E
(A)
C ol l ec t or - Em i t te r Vol t ag e V
C E
( V)
Am bi e nt T e m p e r a t u r e T a ( ˚ C )
140