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2SD2083_01 参数 Datasheet PDF下载

2SD2083_01图片预览
型号: 2SD2083_01
PDF下载: 下载PDF文件 查看货源
内容描述: 硅NPN三重扩散平面晶体管 [Silicon NPN Triple Diffused Planar Transistor]
分类和应用: 晶体晶体管
文件页数/大小: 1 页 / 33 K
品牌: SANKEN [ SANKEN ELECTRIC ]
   
Darlington
2SD2083
s
Electrical Characteristics
Symbol
I
CBO
I
EBO
V
(BR)CEO
h
FE
V
CE
(sat)
V
BE
(sat)
f
T
C
OB
Conditions
V
CB
=120V
V
EB
=6V
I
C
=25mA
V
CE
=4V, I
C
=12A
I
C
=12A, I
B
=24mA
I
C
=12A, I
B
=24mA
V
CE
=12V, I
E
=–1A
V
CB
=10V, f=1MHz
Ratings
10
max
10
max
120
min
2000
min
1.8
max
2.5
max
20
typ
340
typ
V
MHz
pF
5.45
±0.1
B
C
E
20.0min
4.0max
Equivalent
circuit
B
C
(2kΩ) (100Ω) E
Silicon NPN Triple Diffused Planar Transistor
(Complement to type 2SB1383)
s
Absolute maximum ratings
(Ta=25°C)
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
Tj
T
stg
Ratings
120
120
6
25(
Pulse
40)
2
120(Tc=25°C)
150
–55 to +150
Unit
V
V
V
A
A
W
°C
°C
Application :
Driver for Solenoid, Motor and General Purpose
(Ta=25°C)
Unit
External Dimensions
MT-100(TO3P)
5.0
±0.2
15.6
±0.4
9.6
2.0
1.8
4.8
±0.2
2.0
±0.1
µ
A
mA
19.9
±0.3
4.0
V
a
b
ø3.2
±0.1
V
2
3
1.05
+0.2
-0.1
5.45
±0.1
0.65
+0.2
-0.1
1.4
s
Typical Switching Characteristics (Common Emitter)
V
CC
(V)
24
R
L
(Ω)
2
I
C
(A)
12
V
BB1
(V)
10
V
BB2
(V)
–5
I
B1
(mA)
24
I
B2
(mA)
–24
t
on
(
µ
s)
1.0typ
t
stg
(
µ
s)
6.0typ
t
f
(
µ
s)
1.0typ
Weight : Approx 6.0g
a. Part No.
b. Lot No.
I
C
– V
C E
Characteristics
(Typical)
40
30
m
A
V
C E
(sat) – I
B
Characteristics
(Typical)
C o l l e c t o r - Em i t t e r Sa t u r a ti o n V ol t ag e V
C E(sa t)
(V )
3
I
C
– V
B E
Temperature Characteristics
(Typical)
25
( V
C E
=4 V )
A
20m
12mA
C o l l ec t or C u r r e n t I
C
( A)
30
8mA
5mA
20
2
I
C
= 25 A
C ol l e c t o r C ur r e nt I
C
( A )
em
emp
se T
(Ca
)
20
3mA
p)
1 2A
1
6A
as
25˚C
12
0
0
1
2
3
4
5
6
0
0.5
1
5
10
50
100
500
0
0
1
B a s e - E m i t t o r Vo l ta g e V
B E
( V)
–30
˚C (
10
Cas
5˚C
I
B
=1.5 mA
e Te
10
(C
mp)
eT
2
2.2
C ol l ect o r - Em i t t er V ol ta ge V
C E
( V)
Bas e C u r r e nt I
B
( m A)
(V
C E
= 4 V )
20000
10000
D C C u r r e n t Gai n h
F E
5000
20000
D C C ur r e n t Gai n h
FE
10000
5000
˚C
( V
C E
= 4 V)
Transient Thermal Resistance
θ
j -a
( ˚C /W )
h
FE
– I
C
Characteristics
(Typical)
h
F E
– I
C
Temperature Characteristics
(Typical)
θ
j - a
– t Characteristics
3
Typ
125
25
˚C
0˚C
1
–3
1000
500
1000
500
0.5
100
0.2
0.5
1
5
10
40
100
0.02
0 .5
1
5
10
40
0.1
1
10
Time t(ms)
10 0
10 0 0
C ol l e ct o r C u rren t I
C
(A )
C ol l ec t or C ur r e nt I
C
( A)
f
T
– I
E
Characteristics
(Typical)
(V
C E
=1 2 V)
100
100
50
Safe Operating Area
(Single Pulse)
120
Pc – Ta Derating
Ma x im um P ow e r D i s s i p a ti o n P
C
( W )
Typ
Cu t-o ff F r e q u e n c y f
T
(M H
Z
)
100
W
ith
1m
10
s
Co lle ct o r C u r r e n t I
C
( A )
m
10
5
DC
s
In
fin
ite
he
50
at
si
nk
50
1
0.5
Without Heatsink
Natural Cooling
0
–0.1
–0 . 5
–1
–5
–10
0.2
3
5
10
50
1 00
20 0
3.5
0
Without Heatsink
0
25
50
75
10 0
125
15 0
Em it t er C urr en t I
E
( A)
Co l le c to r - E m it t er Vo l ta ge V
C E
( V)
A m b i e n t T e m p e r a tu r e T a ( ˚ C )
147