Built-in Avalanche Diode
for Surge Absorbing
Darlington
Silicon NPN Triple Diffused Planar Transistor
s
Absolute maximum ratings
(Ta=25°C)
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
Tj
T
stg
Ratings
60±10
60±10
6
4
0.5
25(Tc=25°C)
150
–55 to +150
Unit
V
V
V
A
A
W
°C
°C
2SD1796
s
Electrical Characteristics
Symbol
I
CBO
I
EBO
V
(BR)CEO
h
FE
V
CE
(sat)
f
T
C
OB
Conditions
V
CB
=50V
V
EB
=6V
I
C
=10mA
V
CE
=4V, I
C
=3A
I
C
=3A, I
B
=10mA
V
CE
=12V, I
E
=–0.2A
V
CB
=10V, f=1MHz
Ratings
10
max
10
max
60±10
2000
min
1.5
max
60
typ
45
typ
V
MHz
pF
13.0min
Equivalent
circuit
B
C
(3 k
Ω)(1
5 0Ω) E
Application :
Driver for Solenoid, Relay and Motor and General Purpose
(Ta=25°C)
Unit
External Dimensions
FM20(TO220F)
4.0
±0.2
10.1
±0.2
4.2
±0.2
2.8 c0.5
µ
A
V
16.9
±0.3
8.4
±0.2
mA
1.35
±0.15
1.35
±0.15
0.85
+0.2
-0.1
0.45
+0.2
-0.1
2.54
2.2
±0.2
2.4
±0.2
s
Typical Switching Characteristics (Common Emitter)
V
CC
(V)
30
R
L
(Ω)
10
I
C
(A)
3
V
BB1
(V)
10
V
BB2
(V)
–5
I
B1
(mA)
10
I
B2
(mA)
–10
t
on
(
µ
s)
1.0typ
t
stg
(
µ
s)
4.0typ
t
f
(
µ
s)
1.5typ
2.54
3.9
B C E
±0.2
0.8
±0.2
a
b
ø3.3
±0.2
Weight : Approx 2.0g
a. Part No.
b. Lot No.
I
C
– V
CE
Characteristics
(Typical)
0m
A
A
1.0m
V
C E
( sat ) – I
B
Characteristics
(Typical)
C o l l e c t o r - E m i t t er S a tu r a t i o n Vo lt a g e V
C E( sat)
( V )
3
I
C
– V
B E
Temperature Characteristics
(Typical)
( V
CE
=2 V )
4
4
=2
I
B
0.8m
A
C o l l e c t o r Cu r r e n t I
C
( A )
0. 5m A
2
Co l l e c t o r Cu r r e n t I
C
( A)
3
0 .6 m A
3
p)
4A
25˚C (C
a
1
0.3mA
1
0
0
1
2
3
4
0
0.2
0.5
1
5
10
50
10 0
0
0
125˚C
1
I
C
= 1A
1
B as e - Em i t t o r Vo l t a g e V
BE
( V)
–30˚C (C
I
C
= 2 A
(Cas
I
C
= 3 A
ase Tem
2
I
C
=
2
e Tem
0. 4m A
se Tem
p)
p)
2
Col l e ct o r- Em i t ter Vo l t ag e V
C E
(V)
Bas e C ur r e nt I
B
( m A)
h
F E
– I
C
Characteristics
(Typical)
(V
C E
= 4 V )
20000
D C C u r r e n t åGa i n h
FE
10000
h
F E
– I
C
Temperature Characteristics
(Typical)
( V
C E
= 4V )
20000
10000
5000
125
˚C
θ
j - a
– t Characteristics
Transient Thermal Resistance
θ
j -a
( ˚C /W )
5
Typ
5000
DC C ur r e nt å Ga i n h
F E
1000
500
1000
500
˚C
25
0˚C
–3
1
V
CB
=1 0 V
I
E
=– 2 V
0.5
1
10
Time t(ms)
10 0
1 0 00
100
50
0.05
0.1
0. 5
1
4
C ol l ec t or C u rre nt I
C
(A )
100
50
0.05
0.1
0 .5
1
4
C ol l ec t or C ur r en t I
C
( A)
f
T
– I
E
Characteristics
(Typical)
(V
C E
= 1 0 V )
120
10
Safe Operating Area
(Single Pulse)
30
10
Pc – Ta Derating
Natural Cooling
Silicone Grease
Heatsink: Aluminum
in mm
20
W
ith
In
1m
100
C ut- off F r e q u e n c y f
T
( M H
Z
)
Co lle ct o r C u r r e n t I
C
( A )
s
80
DC
Typ
60
1
0 .5
Ma x im um P ow e r D i s s i p a ti o n P
C
( W )
5
10
s
m
0m
s
fin
150x150x2
1 0 0x
1 0
10
0x
2
ite
he
at
40
si
nk
Without Heatsink
Natural Cooling
0 .1
0.05
50x50x2
Without Heatsink
2
20
0
–0.01
– 0. 1
–1
–4
3
5
10
50
10 0
0
0
25
50
75
1 00
125
15 0
Emi t t e r Cu rre nt I
E
(A)
C o ll e ct o r - Em i t t er Vo lt a ge V
C E
( V)
A m b i en t T e m p e r a t ur e T a ( ˚ C )
139
SANKEN [ SANKEN ELECTRIC ]
