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2SD1785 参数 Datasheet PDF下载

2SD1785图片预览
型号: 2SD1785
PDF下载: 下载PDF文件 查看货源
内容描述: 硅NPN三重扩散平面型晶体管(用于驱动电磁阀,继电器和电机,系列稳压器和通用) [Silicon NPN Triple Diffused Planar Transistor(Driver for Solenoid, Relay and Motor, Series Regulator, and General Purpose)]
分类和应用: 晶体稳压器继电器晶体管开关电机驱动局域网
文件页数/大小: 1 页 / 28 K
品牌: SANKEN [ SANKEN ELECTRIC ]
   
Darlington
s
Absolute maximum ratings
(Ta=25°C)
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
Tj
T
stg
2SD1785
120
120
6
6(
Pulse
10)
1
30(Tc=25°C)
150
–55 to +150
Unit
V
V
V
A
A
W
°C
°C
2SD1785
s
Electrical Characteristics
Symbol
I
CBO
I
EBO
V
(BR)CEO
h
FE
V
CE
(sat)
f
T
C
OB
Conditions
V
CB
=120V
V
EB
=6V
I
C
=10mA
V
CE
=2V, I
C
=3A
I
C
=2A, I
B
=3mA
V
CE
=12V, I
E
=–0.1A
V
CB
=10V, f=1MHz
2SD1785
10
max
10
max
120
min
2000
min
1.5
max
100
typ
70
typ
V
MHz
pF
13.0min
Equivalent
circuit
B
C
(2.5kΩ)(200Ω) E
Silicon NPN Triple Diffused Planar Transistor
(Complement to type 2SB1258)
Application :
Driver for Solenoid, Relay and Motor, Series Regulator, and General Purpose
(Ta=25°C)
Unit
External Dimensions
FM20(TO220F)
4.0
±0.2
10.1
±0.2
4.2
±0.2
2.8 c0.5
µ
A
V
16.9
±0.3
8.4
±0.2
mA
1.35
±0.15
1.35
±0.15
0.85
+0.2
-0.1
0.45
+0.2
-0.1
2.54
2.2
±0.2
2.4
±0.2
s
Typical Switching Characteristics (Common Emitter)
V
CC
(V)
30
R
L
(Ω)
10
I
C
(A)
3
V
BB1
(V)
10
V
BB2
(V)
–1.5
I
B1
(mA)
3
I
B2
(mA)
–3
t
on
(
µ
s)
0.5typ
t
stg
(
µ
s)
5.5typ
t
f
(
µ
s)
1.5typ
2.54
3.9
B C E
±0.2
I
C
– V
C E
Characteristics
(Typical)
A
5m
A
3m
A
2mA
V
CE
( sat ) – I
B
Characteristics
(Typical)
C o l l e c t or - Em i t t e r Sa t u r at i on V ol t ag e V
C E(s at)
(V )
3
I
C
– V
B E
Temperature Characteristics
(Typical)
( V
CE
= 2 V )
8
8
A
20
10
m
m
1.5m
A
C o l l ec t or C u r r e n t I
C
( A)
0.7m
A
2
C o l l e c t o r C u r r e n t I
C
( A )
6
1mA
6
emp
se T
(Ca
4
0.5m
)
–30˚
C (C
ase
Tem
p)
A
4
5˚C
1
2A
4A
(Ca
0 .4 m A
I
C
= 6A
se
2
2
I
B
=0.3mA
0
0
2
4
6
0
0 .3
1
5
10
50
1 00
0
0 .4
1
B as e - Em i t t o r Vo l t a g e V
BE
( V )
25˚C
12
Te
mp
)
0.8
±0.2
a
b
ø3.3
±0.2
Weight : Approx 2.0g
a. Type No.
b. Lot No.
2
C ol l ec t or - Emi t t er Vo l ta ge V
C E
(V)
Ba s e Cu r r en t I
B
( m A)
h
F E
– I
C
Characteristics
(Typical)
(V
C E
=2 V)
10000
D C C ur re nt Ga i n h
FE
5000
Ty
p
h
F E
– I
C
Temperature Characteristics
(Typical)
( V
C E
= 2 V)
10000
5000
D C Cu rr en t G ai n h
FE
Transient Thermal Resistance
θ
j- a
(˚ C/ W )
5
θ
j - a
– t Characteristics
12
1000
500
5˚C
˚C
25
–3
C
1000
500
1
100
50
30
0 .0 3 0 . 0 5 0 . 1
100
0.03
0. 1
0 .5
1
5
10
0.5
1
5
10
0 .5
1
10
Time t(ms)
1 00
1 0 00
C ol l e ct o r Curre nt I
C
(A)
Co l le c to r Cu r r en t I
C
( A)
f
T
– I
E
Characteristics
(Typical)
(V
C E
= 1 2 V )
120
20
Safe Operating Area
(Single Pulse)
30
Pc – Ta Derating
100
Cu t-o ff F r e q u e n c y f
T
( M H
Z
)
5
10
M a xim u m Po we r D i s s i p at i o n P
C
(W )
Typ
10
1m
W
ith
C olle c t o r C u r r e n t I
C
( A )
s
D
ms
C
20
In
fin
ite
he
1
0.5
Without Heatsink
Natural Cooling
at
si
nk
50
10
0.1
0
–0.05
0.05
3
Without Heatsink
2
5
10
50
10 0
2 00
0
–0.1
– 0. 5
–1
–5
–8
0
25
50
75
100
1 25
150
Emi t t e r Curre nt I
E
(A )
C ol l e ct or - Em i t te r Vol t ag e V
C E
( V)
Am b i e n t T e m pe r a t u r e T a( ˚ C)
137