欢迎访问ic37.com |
会员登录 免费注册
发布采购

2SD1769 参数 Datasheet PDF下载

2SD1769图片预览
型号: 2SD1769
PDF下载: 下载PDF文件 查看货源
内容描述: 硅NPN三重扩散平面型晶体管(用于驱动电磁阀,继电器和电机,系列稳压器和通用) [Silicon NPN Triple Diffused Planar Transistor(Driver for Solenoid, Relay and Motor, Series Regulator, and General Purpose)]
分类和应用: 晶体稳压器继电器晶体管开关电机驱动局域网
文件页数/大小: 1 页 / 28 K
品牌: SANKEN [ SANKEN ELECTRIC ]
   
Darlington
2SD1769
s
Electrical Characteristics
Symbol
I
CBO
I
EBO
V
(BR)CEO
h
FE
V
CE
(sat)
V
BE
(sat)
f
T
C
OB
Conditions
V
CB
=120V
V
EB
=6V
I
C
=10mA
V
CE
=2V, I
C
=3A
I
C
=3A, I
B
=3mA
I
C
=3A, I
B
=3mA
V
CE
=12V, I
E
=–0.2A
V
CB
=10V, f=1MHz
2SD1769
10
max
20
max
120
min
2000
min
1.5
max
2.0
max
100
typ
typ
Equivalent
circuit
B
C
(2.5kΩ)(200Ω) E
Silicon NPN Triple Diffused Planar Transistor
s
Absolute maximum ratings
(Ta=25°C)
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
Tj
T
stg
2SD1769
120
120
6
6(
Pulse
10)
1
50(Tc=25°C)
150
–55 to +150
Unit
V
V
V
A
A
W
°C
°C
Application :
Driver for Solenoid, Relay and Motor, Series Regulator, and General Purpose
(Ta=25°C)
Unit
External Dimensions
MT-25(TO220)
3.0
±0.2
10.2
±0.2
4.8
±0.2
2.0
±0.1
µ
A
mA
V
V
MHz
pF
2.5
12.0min
4.0max
16.0
±0.7
8.8
±0.2
a
b
ø3.75
±0.2
V
1.35
0.65
+0.2
-0.1
2.5
B C E
1.4
s
Typical Switching Characteristics (Common Emitter)
V
CC
(V)
30
R
L
(Ω)
10
I
C
(A)
3
V
BB1
(V)
10
V
BB2
(V)
–1.5
I
B1
(mA)
3
I
B2
(mA)
–3
t
on
(
µ
s)
0.5typ
t
stg
(
µ
s)
5.5typ
t
f
(
µ
s)
1.5typ
Weight : Approx 2.6g
a. Type No.
b. Lot No.
I
C
– V
CE
Characteristics
(Typical)
A
5m
A
3m
A
V
C E
(sat) – I
B
Characteristics
(Typical)
C o l l ec t or - Em i t t e r Sa t u r at i on V ol t ag e V
CE (s at)
( V )
3
I
C
– V
B E
Temperature Characteristics
(Typical)
( V
CE
=2 V )
8
8
20
10
m
m
2mA
1.5m
A
A
C o l l e c to r C u r r e n t I
C
( A)
0.7m
A
A
2
Tem
mp)
e Te
4
0.5m
C o l l ec to r C u r r e n t I
C
( A)
6
1mA
6
4
p)
25˚C
2
2
125
˚
I
B
=0.3mA
0
0
2
4
6
0
0.3
1
5
10
50
10 0
0
0
1
Ba s e - E m i tt o r V ol t ag e V
B E
( V)
–30˚C
(Case
C(
1
(Cas
2A
4A
Cas
e
0 .4 m A
I
C
= 6A
Temp
)
2
Co l l ect o r - Em i tte r V ol ta ge V
C E
(V)
Ba se Cu r r e nt I
B
( m A)
h
FE
– I
C
Characteristics
(Typical)
( V
C E
=2 V)
10000
DC Cu r r e nt Ga i n h
FE
5000
Typ
h
F E
– I
C
Temperature Characteristics
(Typical)
( V
C E
= 2V )
10000
5000
D C Cu rr en t Ga i n h
FE
Transient Thermal Resistance
θ
j -a
( ˚C /W )
10
5
θ
j - a
– t Characteristics
12
1000
500
5˚C
˚C
25
–3
C
1000
500
1
0.5
100
50
30
0 . 0 3 0 . 0 5 0. 1
80
0.03
0. 1
0.5
1
5
10
0 .5
1
5
10
0.2
1
5
10
50 100
Time t(ms)
1000
5 0 00
C ol l ec t or Curre nt I
C
(A )
Co l le c to r C ur r en t I
C
( A)
f
T
– I
E
Characteristics
(Typical)
(V
C E
=1 2 V)
120
20
Safe Operating Area
(Single Pulse)
50
Pc – Ta Derating
100
Cu t-o ff F r e q u e n c y f
T
( M H
Z
)
M ax im u m P o w e r D i s s i p a t i o n P
C
( W )
Typ
10
10
D
500
µ
s
s
1m
s
3m
ms
40
W
ith
5
Co llec t o r C u r r e n t I
C
( A )
C
In
fin
30
ite
he
at
si
1
0.5
Without Heatsink
Natural Cooling
nk
50
20
10
Without Heatsink
0
25
50
75
100
12 5
15 0
0
–0.05
– 0. 5
–1
–5
–8
Em it t er C u rre nt I
E
( A)
0.08
3
5
10
50
10 0
20 0
2
0
C o ll e ct o r - Em i t te r Vo lt ag e V
C E
( V )
A m bi e nt T e m p e r a t ur e T a ( ˚ C )
136