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2SC5333 参数 Datasheet PDF下载

2SC5333图片预览
型号: 2SC5333
PDF下载: 下载PDF文件 查看货源
内容描述: 硅NPN三重扩散平面型晶体管(系列稳压器,开关,和通用) [Silicon NPN Triple Diffused Planar Transistor(Series Regulator, Switch, and General Purpose)]
分类和应用: 晶体稳压器开关晶体管
文件页数/大小: 1 页 / 25 K
品牌: SANKEN [ SANKEN ELECTRIC ]
   
2SC5333
Silicon NPN Triple Diffused Planar Transistor
s
Absolute maximum ratings
(Ta=25°C)
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
Tj
T
stg
2SC5333
300
300
6
2
0.2
35(Tc=25°C)
150
–55to+150
Unit
V
V
V
A
A
W
°C
°C
2.54
2.2
±0.2
Application :
Series Regulator, Switch, and General Purpose
(Ta=25°C)
2SC5333
1.0
max
1.0
max
300
min
30
min
1.0
max
10
typ
75
typ
V
MHz
pF
13.0min
s
Electrical Characteristics
Symbol
I
CBO
I
EBO
V
(BR)CEO
h
FE
V
CE
(sat)
f
T
C
OB
Conditions
V
CB
=300V
V
EB
=6V
I
C
=25mA
V
CE
=4V, I
C
=0.5A
I
C
=1.0A, I
B
=0.2A
V
CE
=12V, I
E
=–0.2A
V
CB
=10V, f=1MHz
External Dimensions
FM20(TO220F)
4.0
±0.2
10.1
±0.2
4.2
±0.2
2.8 c0.5
Unit
mA
V
16.9
±0.3
8.4
±0.2
mA
1.35
±0.15
1.35
±0.15
0.85
+0.2
-0.1
0.45
+0.2
-0.1
2.54
2.4
±0.2
s
Typical Switching Characteristics (Common Emitter)
V
CC
(V)
100
R
L
(Ω)
100
I
C
(A)
1.0
V
B2
(V)
–5
I
B1
(A)
0.1
I
B2
(A)
–0.2
t
on
(
µ
s)
0.3
typ
t
stg
(
µ
s)
4.0
typ
t
f
(
µ
s)
1.0
typ
3.9
B C E
±0.2
0.8
±0.2
a
b
ø3.3
±0.2
Weight : Approx 2.0g
a. Type No.
b. Lot No.
I
C
– V
CE
Characteristics
(Typical)
200
mA
V
CE
(sat) – I
B
Characteristics
(Typical)
C ol l e c t o r - E m i t te r S at u r a t i o n Vo lt a g e V
C E(s at)
( V )
3
I
C
– V
B E
Temperature Characteristics
(Typical)
2
( V
CE
= 4 V )
2
I
B
=
C o l l ec t or C u r r e n t I
C
( A)
2
C ol l e c t o r C ur r en t I
C
( A)
Tem
p
)
25˚C (C
1
C (C
I
B
= 2 0 m
A /s to p
I
C
= 1A
0
0
0.1
0. 2
2A
0 .3
0
0
0.2
0.4
0.6
0.8
1.0
0
0
1
2
3
4
Co l l ect o r - Em i tt er Vo l ta ge V
C E
(V )
Bas e C ur r en t I
B
( A)
Ba s e - E m i t to r V ol t ag e V
B E
( V )
h
FE
– I
C
Characteristics
(Typical)
(V
C E
=4 V)
200
D C C u r r e n t G ai n h
FE
D C C u r r e n t G ai n h
FE
h
F E
– I
C
Temperature Characteristics
(Typical)
( V
CE
= 4 V )
200
Transient Thermal Resistance
θ
j -a
( ˚ C / W )
4
θ
j - a
– t Characteristics
100
Typ
100
125
˚C
25˚C
50
50
–30
˚C
1
0.5
0.3
10
3
10
1 00
C ol l ec t or C urre nt I
C
(mA )
1000 2000
10
3
5
10
50
10 0
5 00 1000 2000
1
10
Time t(ms)
1 00
–30˚C (C
125˚
ase Tem
ase Te
ase
p)
1
1
mp)
10 0 0
C o ll e ct o r Cu r r e n t I
C
( m A)
f
T
– I
E
Characteristics
(Typical)
( V
CE
= 1 2 V )
20
Safe Operating Area
(Single Pulse)
35
Pc – Ta Derating
Cu t-o ff Fre q u e n c y f
T
( M H
Z
)
Typ
Ma x imu m Po we r D i s s i p a t i o n P
C
( W )
30
W
ith
In
fin
ite
20
he
10
at
si
nk
10
Without Heatsink
0
–0.003
–0.01
–0.05 – 0. 1
Em it t er C u rre nt I
E
( A)
–0. 5
–1
2
0
0
25
50
75
10 0
125
15 0
A m b i e n t T em p e r at u r e T a ( ˚ C )
134