2SC5287
Silicon NPN Triple Diffused Planar Transistor
(High Voltage Switchihg Transistor)
s
Absolute maximum ratings
(Ta=25°C)
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
Tj
T
stg
Ratings
900
550
7
5(
Pulse
10)
2.5
80(Tc=25°C)
150
–55 to +150
Unit
V
V
V
A
A
W
°C
°C
Application :
Switching Regulator and General Purpose
(Ta=25°C)
Ratings
100
max
100
max
550
min
10 to 25
0.5
max
1.2
max
6
typ
50
typ
V
MHz
pF
5.45
±0.1
B
C
E
20.0min
4.0max
s
Electrical Characteristics
Symbol
I
CBO
I
EBO
V
(BR)CEO
h
FE
V
CE
(sat)
V
BE
(sat)
f
T
C
OB
Conditions
V
CB
=800V
V
EB
=7V
I
C
=10mA
V
CE
=4V, I
C
=1.8A
I
C
=1.8A, I
B
=0.36A
I
C
=1.8A, I
B
=0.36A
V
CE
=12V, I
E
=–0.35A
V
CB
=10V, f=1MHz
External Dimensions
MT-100(TO3P)
5.0
±0.2
15.6
±0.4
9.6
2.0
1.8
4.8
±0.2
2.0
±0.1
Unit
µ
A
µ
A
V
19.9
±0.3
4.0
a
b
ø3.2
±0.1
V
2
3
1.05
+0.2
-0.1
5.45
±0.1
0.65
+0.2
-0.1
1.4
s
Typical Switching Characteristics (Common Emitter)
V
CC
(V)
250
R
L
(Ω)
139
I
C
(A)
1.8
V
BB1
(V)
10
V
BB2
(V)
–5
I
B1
(A)
0.27
I
B2
(A)
–0.9
t
on
(
µ
s)
0.7
max
t
stg
(
µ
s)
4.0
max
t
f
(
µ
s)
0.5
max
Weight : Approx 6.0g
a. Part No.
b. Lot No.
I
C
– V
CE
Characteristics
(Typical)
5
70
A
0m
600mA
V
CE
(sat),V
BE
(sat) – I
C
Temperature Characteristics
(Typical)
C ol l e c t o r - E m i t te r S at u r a t i o n Vo lt a g e V
C E(s at)
(V )
Ba s e- E m i t t er S a tu r a t i o n Vo l t a g e V
B E(s at)
( V)
1.5
I
C
/ I
B
= 5 Co ns t .
I
C
– V
B E
Temperature Characteristics
(Typical)
( V
CE
= 4V )
7
4
C ol l e c t o r C ur r en t I
C
( A)
40 0m A
6
C o l l ec t or C u r r e n t I
C
( A )
0 .5
1
5 7
5
25 0m A
3
1.0
V
B E
( s at )
4
15 0m A
2
3
0.5
I
B
=50mA
2
1
1
V
C E
( sa t )
0
0.03 0.05
0. 1
0
0
0.5
1 .0
0
0
1
2
3
4
Co l l ect o r - Em i t te r V ol ta ge V
C E
( V)
Co l le c to r Cu r r e n t I
C
( A)
Ba s e - E m i t to r V ol t ag e V
B E
( V)
(V
C E
= 4 V )
40
D C Cu rr en t Ga i n h
F E
S wi t c h i ng T i m e
t
on•
t
s tg•
t
f
(
µ
s )
125˚ C
25˚C
Transient Thermal Resistance
θ
j -a
( ˚C / W )
h
FE
– I
C
Characteristics
(Typical)
6
5
t
o n
•t
s tg
•t
f
– I
C
Characteristics
(Typical)
θ
j - a
– t Characteristics
3
V
CC
2 5 0 V
I
C
:I
B1
:I
B 2
=1 : 0. 15 : –0 .5
1
0 .5
t
on
0 .1
0 .2
t
f
t
s tg
–55˚ C
10
1
0 .5
5
4
0.02
0.05
0. 1
0. 5
1
5
10
0.5
1
5
0 .3
1
10
Time t(ms)
1 00
1 0 00
C ol l e ct or Cu rre nt I
C
(A)
Co l le c to r C ur r en t I
C
( A)
Safe Operating Area
(Single Pulse)
20
10
10
Reverse Bias Safe Operating Area
20
80
Pc – Ta Derating
50
0
µ
s
5
Col lec t o r C u r r e n t I
C
(A )
5
Co llec t o r C u r r e n t I
C
( A )
M ax im um P o w e r Di s s i p a t i o n P
C
( W )
µ
s
10
60
W
ith
In
fin
ite
1
0.5
1
0 .5
Without Heatsink
Natural Cooling
I
B2
=–1.0A
L=3mH
Duty:less than 1%
he
40
at
si
nk
Without Heatsink
Natural Cooling
0.1
0.05
0.03
10
50
10 0
500
20
0 .1
0.05
0.03
50
W i t h ou t H e at s i n k
10 0
50 0
10 0 0
3.5
0
0
25
50
75
1 00
125
15 0
Co ll e ct o r -Em i t te r V ol tag e V
C E
(V )
Co l le c to r - Em it t er Vo l ta ge V
C E
( V)
A m b i en t T e m p e r a tu r e T a ( ˚ C )
134
SANKEN [ SANKEN ELECTRIC ]
