2SC5239
Silicon NPN Triple Diffused Planar Transistor
(High Voltage Switchihg Transistor)
s
Absolute maximum ratings
(Ta=25°C)
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
Tj
T
stg
2SC5239
900
550
7
3(
Pulse
6)
1.5
50(Tc=25°C)
150
–55 to +150
Unit
V
V
V
A
A
W
°C
°C
Application :
Switching Regulator and General Purpose
(Ta=25°C)
2SC5239
100
max
100
max
550
min
10 to 30
0.5
max
1.2
max
6
typ
35
typ
V
MHz
pF
2.5
B C E
12.0min
4.0max
s
Electrical Characteristics
Symbol
I
CBO
I
EBO
V
(BR)CEO
h
FE
V
CE
(sat)
V
BE
(sat)
f
T
C
OB
Conditions
V
CB
=800V
V
EB
=7V
I
C
=10mA
V
CE
=4V, I
C
=1A
I
C
=1A, I
B
=0.2A
I
C
=1A, I
B
=0.2A
V
CE
=12V, I
E
=–0.25A
V
CB
=10V, f=1MHz
External Dimensions
MT-25(TO220)
3.0
±0.2
10.2
±0.2
4.8
±0.2
2.0
±0.1
Unit
µ
A
µ
A
V
16.0
±0.7
8.8
±0.2
a
b
ø3.75
±0.2
V
1.35
0.65
+0.2
-0.1
2.5
1.4
s
Typical Switching Characteristics (Common Emitter)
V
CC
(V)
250
R
L
(Ω)
250
I
C
(A)
1
V
BB1
(V)
10
V
BB2
(V)
–5
I
B1
(A)
0.15
I
B2
(A)
–0.45
t
on
(
µ
s)
0.7
max
t
stg
(
µ
s)
4.0
max
t
f
(
µ
s)
0.5
max
Weight : Approx 2.6g
a. Type No.
b. Lot No.
I
C
– V
CE
Characteristics
(Typical)
3
0
40
m
A
V
CE
(sat),V
BE
(sat) – I
C
Temperature Characteristics
(Typical)
C o l l e c t o r - Em i t t e r Sa t u r a ti o n V ol t ag e V
C E(s at)
(V )
B as e - Em i t t e r Sa t u r at i on V ol t ag e V
B E(s at)
( V )
1.5
I
C
/ I
B
= 5 Co n st .
I
C
– V
B E
Temperature Characteristics
(Typical)
( V
CE
=4 V )
5
300mA
20 0m A
4
C o l l e c t o r C u r r e nt I
C
( A)
0 .5
1
5
C o l l e c to r C u r r e n t I
C
( A )
15 0m A
2
100 mA
1.0
V
B E
( sa t)
3
2
1
I
B
=40m A
0.5
1
V
C E
( sa t)
0
0.03 0.05
0 .1
0
0
0.5
B a s e - E m i tt o r Vo l ta g e V
B E
( V)
1.0
0
0
1
2
3
4
Co ll e ct o r -Em i t t er V ol tag e V
C E
( V)
C ol l ec t or C ur r en t I
C
( A)
(V
C E
= 4 V )
40
D C C ur re nt Ga i n h
FE
S w i t c hi n g T i m e
t
on •
t
st g•
t
f
(µ s)
1 25 ˚C
25 ˚ C
7
5
t
s tg
V
CC
2 5 0 V
I
C
: I
B 1
: I
B2
= 1: 0 .1 5: – 0. 45
1
0.5
t
on
0.1
0.2
t
f
Transient Thermal Resistance
θ
j -a
( ˚ C / W )
h
F E
– I
C
Characteristics
(Typical)
t
o n
•t
s t g
• t
f
– I
C
Characteristics
(Typical)
θ
j - a
– t Characteristics
4
–5 5˚ C
1
10
0.5
0.3
5
4
0.02
0.05
0. 1
0. 5
1
5 6
0. 5
1
3
1
10
Time t(ms)
1 00
10 0 0
C ol l ec t or Cur ren t I
C
( A)
C ol l e ct or C u r r e nt I
C
( A)
Safe Operating Area
(Single Pulse)
7
5
50
Reverse Bias Safe Operating Area
7
5
Ma x imu m Po w e r D i s s i p a t i o n P
C
(W )
50
Pc – Ta Derating
10
µ
s
0
µ
s
40
W
ith
Co llec to r C u r r e n t I
C
( A )
Col lec to r Cu r r e n t I
C
(A )
1
0.5
1
0 .5
In
fin
30
ite
he
at
si
nk
0.1
0.05
Without Heatsink
Natural Cooling
0 .1
0.05
Without Heatsink
Natural Cooling
L=3mH
I
B2
=–1.0A
Duty:less than 1%
20
10
W i t ho u t H ea t s i nk
0
25
50
75
1 00
12 5
150
0.01
10
50
10 0
500
0.01
10
50
1 00
5 00
1 0 00
2
0
Co ll e ct o r -Em i t t er Vo l tag e V
C E
(V )
C o ll e ct o r - Em i t te r Vo lt a ge V
C E
( V )
A m b i en t T e m p e r a t ur e T a ( ˚ C )
130
SANKEN [ SANKEN ELECTRIC ]
