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2SC5099P 参数 Datasheet PDF下载

2SC5099P图片预览
型号: 2SC5099P
PDF下载: 下载PDF文件 查看货源
内容描述: [Power Bipolar Transistor, 6A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin, FM100, TO-3PF, 3 PIN]
分类和应用: 晶体晶体管放大器局域网
文件页数/大小: 1 页 / 27 K
品牌: SANKEN [ SANKEN ELECTRIC ]
   
2SC5099
Silicon NPN Triple Diffused Planar Transistor
(Complement to type 2SA1907)
s
Absolute maximum ratings
(Ta=25°C)
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
Tj
T
stg
2SC5099
120
80
6
6
3
60(Tc=25°C)
150
–55 to +150
Unit
V
V
V
A
A
W
°C
°C
Application :
Audio and General Purpose
(Ta=25°C)
2SC5099
10
max
10
max
80
min
50
min
0.5
max
20
typ
110
typ
V
MHz
16.2
s
Electrical Characteristics
Symbol
I
CBO
I
EBO
V
(BR)CEO
h
FE
V
CE
(sat)
f
T
C
OB
∗h
FE
Rank
Conditions
V
CB
=120V
V
EB
=6V
I
C
=50mA
V
CE
=4V, I
C
=2A
I
C
=2A, I
B
=0.2A
V
CE
=12V, I
E
=–0.5A
V
CB
=10V, f=1MHz
External Dimensions
FM100(TO3PF)
0.8
±0.2
15.6
±0.2
5.5
±0.2
3.45
±0.2
5.5
ø3.3
±0.2
1.6
Unit
µ
A
V
9.5
±0.2
µ
A
23.0
±0.3
a
b
pF
1.75
2.15
1.05
+0.2
-0.1
5.45
±0.1
1.5
4.4
5.45
±0.1
1.5
0.65
+0.2
-0.1
3.3
0.8
O(50 to 100), P(70 to 140), Y(90 to 180)
s
Typical Switching Characteristics (Common Emitter)
V
CC
(V)
30
R
L
(Ω)
10
I
C
(A)
3
V
BB1
(V)
10
V
BB2
(V)
–5
I
B1
(A)
0.3
I
B2
(A)
–0.3
t
on
(
µ
s)
0.16typ
t
stg
(
µ
s)
2.60typ
t
f
(
µ
s)
0.34typ
3.35
B
C
E
Weight : Approx 6.5g
a. Type No.
b. Lot No.
I
C
– V
C E
Characteristics
(Typical)
0m
A
15
0m
A
10
0m
A
80m
A
V
C E
(sat ) – I
B
Characteristics
(Typical)
Co l l e c t o r - Em i t t e r Sa t u r a ti o n V o lt a ge V
C E(s at)
( V )
3
I
C
– V
B E
Temperature Characteristics
(Typical)
6
( V
CE
= 4 V )
6
20
Co l l e c t o r Cu r r e n t I
C
( A )
50 m A
C o l l e c t o r C u r r e n t I
C
( A )
4
2
4
30mA
2
20mA
1
2
I
B
=10mA
I
C
= 6 A
4A
2A
0
0
0. 5
1 .0
1.5
0
0
0
0
1
2
3
4
125
˚C (
Cas
e Te
25˚C
mp
(Cas
e Tem
)
p)
–30˚C
(Case
Temp
)
1
Ba s e- E m i t t or V o l t a ge V
BE
( V )
C o l le ct o r - Em i t t er V ol ta ge V
C E
( V)
Bas e C ur r e nt I
B
( A)
(V
C E
=4 V)
300
D C Cu r r en t G a i n h
FE
DC C ur r e nt Ga i n h
FE
200
12 5 ˚ C
( V
C E
= 4 V)
Transient Thermal Resistance
θ
j -a
( ˚C /W )
h
FE
– I
C
Characteristics
(Typical)
h
F E
– I
C
Temperature Characteristics
(Typical)
θ
j - a
– t Characteristics
5
100
25 ˚ C
100
Typ
– 30 ˚ C
50
1
50
0.5
0.3
30
0.02
0. 1
0 .5
1
56
20
0.02
0. 1
0 .5
1
56
1
10
1 00
Time t(ms)
1 0 0 0 20 0 0
C ol l ec t or Cur ren t I
C
(A )
C o ll e ct o r C u r r e nt I
C
( A)
f
T
– I
E
Characteristics
(Typical)
( V
C E
=1 2 V)
40
20
10
Cu t-o ff F r e q u e n c y f
T
( M H
Z
)
30
C ol lec to r Cu rr en t I
C
(A )
5
Safe Operating Area
(Single Pulse)
60
Pc – Ta Derating
10
DC
10
0m
ms
M ax im um P ow e r D i s s i p a ti o n P
C
( W )
1m
s
s
Typ
40
20
1
0 .5
Without Heatsink
Natural Cooling
20
10
Without Heatsink
0
–0.02
0 .1
–0 . 1
–1
–6
5
10
50
10 0
Em it t e r Curr en t I
E
( A)
C o ll e ct o r - Em i t t er Vo lt a ge V
C E
( V)
3.5
0
0
25
50
75
100
125
1 50
Am b i e nt T e m pe r a t u r e T a ( ˚ C)
3.0
2
W
ith
In
fin
ite
he
at
si
nk
125