Built-in Damper Diode
s
Absolute maximum ratings
(Ta=25°C)
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
Tj
T
stg
2SC5003
1500
800
6
7(
Pulse
14)
3.5
80(Tc=25°C)
150
–55 to +150
Unit
V
V
V
A
A
W
°C
°C
2SC5003
(Ta=25°C)
2SC5003
100
max
1
max
1
max
6
min
8
min
4 to 9
5
max
1.5
max
2.0
max
4
typ
100
typ
Unit
µ
A
mA
mA
V
Conditions
V
CB
=1200V
V
CB
=1500V
V
CE
=800V
I
EB
=300mA
V
CE
=5V, I
C
=1A
V
CE
=5V, I
C
=5A
I
C
=5A, I
B
=1.2A
I
C
=5A, I
B
=1.2A
I
EC
=7A
V
CE
=12V, I
E
=–0.5A
V
CB
=10V, f=1MHz
0.8
±0.2
15.6
±0.2
23.0
±0.3
9.5
±0.2
Equivalent
circuit
B
C
(50
Ω
)
E
Silicon NPN Triple Diffused Planar Transistor
(High Voltage Switchihg Transistor)
s
Electrical Characteristics
Symbol
I
CBO1
I
CBO2
I
CEO
V
EBO
h
FE1
h
FE2
V
CE
(sat)
V
BE
(sat)
V
FEC
f
T
C
OB
Application :
Display Horizontal Deflection Output, Switching Regulator and General Purpose
External Dimensions
FM100(TO3PF)
5.5
±0.2
3.45
±0.2
5.5
ø3.3
±0.2
1.6
V
V
V
MHz
pF
a
b
16.2
1.75
2.15
1.05
+0.2
-0.1
5.45
±0.1
5.45
±0.1
4.4
1.5
0.65
+0.2
-0.1
3.3
0.8
s
Typical Switching Characteristics (Common Emitter)
V
CC
(V)
200
R
L
(Ω)
50
I
C
(A)
4
V
BB1
(V)
10
V
BB2
(V)
–5
I
B1
(A)
0.8
I
B2
(A)
–1.6
t
stg
(
µ
s)
4.0
max
t
f
(
µ
s)
0.2
max
3.35
1.5
B
C
E
Weight : Approx 6.5g
a. Type No.
b. Lot No.
I
C
– V
C E
Characteristics
(Typical)
Co l l e c t o r - E m i tt e r Sa t u r a t i o n V o lt a ge V
C E(s at)
( V)
7
1.7
A
V
CE
(sat)–I
C
Characteristics
(Typical)
3
( I
C
: I
B
= 5 :1 )
I
C
– V
B E
Temperature Characteristics
(Typical)
7
( V
CE
= 5 V )
1 .4 A
6
90 0m A
6
Co l l e c t o r Cu r r e n t I
C
( A )
5
600 mA
2
C o l l ec t or C u r r e n t I
C
( A )
4
4
ase
Tem
p)
25˚C (C
ase Te
mp)
3
300mA
2
I
B
=100m A
2
125˚
C (C
1
1
0
0
1
2
3
4
0
0 .2
0. 5
1
5
10
0
0
0.5
–30˚C
(Case
Temp)
1.0
3.0
1.5
Co ll e ct o r- Em i t ter Vo l t ag e V
C E
( V)
C ol l ec t or C u r r e nt I
C
( A)
B a s e - Em i t t o r Vo l t a g e V
BE
( V )
h
FE
– I
C
Characteristics
(Typical)
(V
C E
=5 V )
50
Sw i t c hi n g T i m e
t
s tg•
t
f
(
µ
s )
DC C ur re nt Ga i n h
FE
20
10
5
t
s t g
•t
f
– I
C
Characteristics
(Typical)
Transient Thermal Resistance
θ
j- a
( ˚ C / W )
.
V
C C
= 20 0V
.
I
C
: I
B 1
: – I
B 2
= 5 :1 : 2
t
st g
3
θ
j- a
– t Characteristics
12
5˚C
1
10
25
˚C
0˚C
–3
1
0.5
t
f
0.5
5
2
0.02
0.05
0.1
0 .5
1
5
7
0.1
0 .2
0 .5
1
5
7
0.1
1
10
100
Time t(ms)
1 0 00 20 0 0
C ol l ec t or C u rren t I
C
( A)
Co l le c to r Cu r r en t I
C
( A)
Safe Operating Area
(Single Pulse)
20
100µs
Reverse Bias Safe Operating Area
20
80
P c – Ta Derating
10
Co llec to r C u r r e n t I
C
( A )
Co lle c tor Cu r r e n t I
C
( A )
M ax im um P o we r Di s s i p a t i o n P
C
( W )
10
5
60
W
ith
In
fin
ite
he
5
40
at
si
1
Without Heatsink
Natural Cooling
L=3mH
–I
B2
=1A
Duty:less than 1%
nk
Without Heatsink
Natural Cooling
0.5
20
1
100
5 00
C ol l ec t or - Emi tte r V ol ta ge V
C E
(V)
1000
0.1
50
10 0
5 00
1 00 0
2 00 0
3.5
0
W i t ho u t H ea t s i nk
0
25
50
75
1 00
125
150
C o ll e ct o r - Em i t te r Vo lt a ge V
C E
( V)
A m b i en t T e m p e r a tu r e T a ( ˚ C )
123
SANKEN [ SANKEN ELECTRIC ]
