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2SC4886O 参数 Datasheet PDF下载

2SC4886O图片预览
型号: 2SC4886O
PDF下载: 下载PDF文件 查看货源
内容描述: [Power Bipolar Transistor, 14A I(C), 150V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin, FM100, TO-3PF, 3 PIN]
分类和应用: 晶体晶体管放大器局域网
文件页数/大小: 1 页 / 28 K
品牌: SANKEN [ SANKEN ELECTRIC ]
   
LAPT
2SC4886
Application :
Audio and General Purpose
(Ta=25°C)
2SC4886
100
max
100
max
150
min
50
min
2.0
max
60
typ
200
typ
V
MHz
16.2
Silicon NPN Epitaxial Planar Transistor
(Complement to type 2SA1860)
s
Absolute maximum ratings
(Ta=25°C)
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
Tj
T
stg
2SC4886
150
150
5
14
3
80(Tc=25°C)
150
–55 to +150
Unit
V
V
V
A
A
W
°C
°C
s
Electrical Characteristics
Symbol
I
CBO
I
EBO
V
(BR)CEO
h
FE
V
CE
(sat)
f
T
C
OB
∗h
FE
Rank
Conditions
V
CB
=150V
V
EB
=5V
I
C
=25mA
V
CE
=4V, I
C
=5A
I
C
=5A, I
B
=500mA
V
CE
=12V, I
E
=–2A
V
CB
=10V, f=1MHz
External Dimensions
FM100(TO3PF)
0.8
±0.2
15.6
±0.2
5.5
±0.2
3.45
±0.2
5.5
ø3.3
±0.2
1.6
Unit
µ
A
V
23.0
±0.3
9.5
±0.2
µ
A
a
b
pF
1.75
2.15
1.05
+0.2
-0.1
5.45
±0.1
1.5
4.4
5.45
±0.1
1.5
0.65
+0.2
-0.1
3.3
0.8
O(50 to 100), P(70 to 140), Y(90 to 180)
s
Typical Switching Characteristics (Common Emitter)
V
CC
(V)
60
R
L
(Ω)
12
I
C
(A)
5
V
BB1
(V)
10
V
BB2
(V)
–5
I
B1
(A)
0.5
I
B2
(A)
–0.5
t
on
(
µ
s)
0.26typ
t
stg
(
µ
s)
1.5typ
t
f
(
µ
s)
0.35typ
3.35
B
C
E
Weight : Approx 6.5g
a. Type No.
b. Lot No.
I
C
– V
C E
Characteristics
(Typical)
0m
A
400m
300m
A
V
CE
( sat ) – I
B
Characteristics
(Typical)
C o l l ec t or - Em i t t e r Sa t u r at i on V ol t ag e V
CE (s at)
( V )
3
I
C
– V
B E
Temperature Characteristics
(Typical)
14
( V
CE
= 4V )
14
75
A
A
0m
60
0mA
0
5
200m
A
A
C o l l e c to r C u r r e n t I
C
( A)
C o l l e c t or C u r r e n t I
C
( A )
10
150m
10
2
100mA
em
5
5˚C
(C
as
25
eT
˚C
1
5A
0
0
0.2
0. 4
0. 6
0.8
1.0
0
0
0
0
1
2
3
4
–30
˚C
I
B
=20mA
I
C
= 1 0A
12
1
B a s e - Em i t t o r Vo l t a g e V
B E
( V)
(Ca
se
Tem
50m A
5
p)
p)
3.0
2
Co l l ec t or - Emi t t er Vo l ta ge V
C E
(V)
Ba se C u r r e nt I
B
( A)
h
F E
– I
C
Characteristics
(Typical)
( V
CE
= 4 V )
200
DC Cu r r e nt Ga i n h
FE
h
F E
– I
C
Temperature Characteristics
(Typical)
( V
C E
= 4V )
200
1 25 ˚ C
DC C ur re nt Ga i n h
FE
Transient Thermal Resistance
θ
j- a
( ˚ C / W )
3
θ
j - a
– t Characteristics
100
Typ
100
2 5˚ C
– 30 ˚ C
1
0.5
50
50
20
0.02
0.1
0. 5
1
5
10 14
20
0 .0 2
0. 1
0. 5
1
5
10 14
0.1
1
10
1 00
Time t(ms)
1 0 00 2 0 0 0
Co l le ct o r C ur ren t I
C
(A )
C ol l ec t or C ur r e nt I
C
( A)
f
T
– I
E
Characteristics
(Typical)
(V
C E
= 1 2 V )
80
40
Safe Operating Area
(Single Pulse)
80
1m
s
Pc – Ta Derating
Cu t- off F r e q u e nc y f
T
( M H
Z
)
Typ
60
Col lec t o r Cu rr en t I
C
(A )
10
5
10
m
DC
0m
s
s
Ma x im um P ow e r D i s s i p a t i on P
C
( W )
10
60
W
ith
In
fin
ite
he
40
40
at
si
1
0.5
Without Heatsink
Natural Cooling
0.1
nk
20
20
Without Heatsink
5
10
50
10 0
200
15 0
3 .5
0
0
25
50
75
100
125
150
0
–0.02
–0 . 1
–1
–10
0.05
2
Em i t t er C u rre nt I
E
(A)
Col l ec t or - Em i t te r Vol t ag e V
C E
( V)
A m b i e n t T em p e r at u r e T a ( ˚ C )
119