2SC4706
Silicon NPN Triple Diffused Planar Transistor
(High Voltage Switchihg Transistor)
s
Absolute maximum ratings
(Ta=25°C)
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
Tj
T
stg
Ratings
900
600
7
14(
Pulse
28)
7
130(Tc=25°C)
150
–55to+150
Unit
V
V
V
A
A
W
°C
°C
Application :
Switching Regulator and General Purpose
(Ta=25°C)
Ratings
100
max
100
max
600
min
10 to 25
0.5
max
1.2
max
6
typ
160
typ
V
MHz
pF
20.0min
4.0max
s
Electrical Characteristics
Symbol
I
CBO
I
EBO
V
(BR)CEO
h
FE
V
CE
(sat)
V
BE
(sat)
f
T
C
OB
Conditions
V
CB
=800V
V
EB
=7V
I
C
=10mA
V
CE
=4V, I
C
=7A
I
C
=7A, I
B
=1.4A
I
C
=7A, I
B
=1.4A
V
CE
=12V, I
E
=–1.5A
V
CB
=10V, f=1MHz
External Dimensions
MT-100(TO3P)
5.0
±0.2
15.6
±0.4
9.6
2.0
1.8
4.8
±0.2
2.0
±0.1
Unit
µ
A
µ
A
19.9
±0.3
V
4.0
a
b
ø3.2
±0.1
V
2
3
1.05
+0.2
-0.1
0.65
+0.2
-0.1
1.4
s
Typical Switching Characteristics (Common Emitter)
V
CC
(V)
250
R
L
(Ω)
35.7
I
C
(A)
7
V
BB1
(V)
10
V
BB2
(V)
–5
I
B1
(A)
1.05
I
B2
(A)
–3.5
t
on
(
µ
s)
1
max
t
stg
(
µ
s)
5
max
t
f
(
µ
s)
0.7
max
5.45
±0.1
B
C
E
5.45
±0.1
Weight : Approx 6.0g
a. Part No.
b. Lot No.
I
C
– V
CE
Characteristics
(Typical)
14
V
CE
(sat),V
BE
(sat) – I
C
Temperature Characteristics
(Typical)
C o l l ec to r - Em i t t er S a t ur a t i o n Vo l ta g e V
CE (sa t)
(V )
B as e - Em i t t e r Sa t u r at i on V ol t ag e V
BE (sa t)
( V )
2
I
C
/I
B
= 5 C on s t.
I
C
– V
B E
Temperature Characteristics
(Typical)
14
( V
CE
=4 V )
1.
12
6A
1. 2A
12
C o l l ec t or C u r r e n t I
C
( A )
800mA
C o l l e c t o r Cu r r e n t I
C
( A )
10
10
600mA
8
400 mA
8
eT
emp
)
mp)
e Te
(Cas
1
V
B E
( s at )
6
200mA
6
˚C (
Cas
4
4
25˚C
125
I
B
=100mA
2
2
V
C E
( s at )
0
0.02
0.05 0 .1
0 .5
1
5
10
0
0
0.2
0.4
0.6
0
0
1
2
3
4
0.8
–55˚C
(Case
Temp
)
1.0
1.2
Co ll e ct o r- Em i t ter Vo l t ag e V
C E
(V)
Co l le c to r C ur r en t I
C
( A)
B a s e - Em i t t o r Vo l t a g e V
B E
( V )
h
FE
– I
C
Temperature Characteristics
(Typical)
(V
C E
= 4 V )
50
Sw i t c hi n g T i m e
t
on•
t
st g•
t
f
(
µ
s )
8
5
t
o n
•t
s t g
•t
f
– I
C
Characteristics
(Typical)
θ
j- a
– t Characteristics
125˚C
D C C u r r e n t G ai n h
FE
25˚C
V
CC
2 5 0 V
I
C
: I
B1
: – I
B2
= 10 :1 . 5: 5
1
t
on
0 .5
t
f
t
s tg
–55˚C
10
5
0.02
0.05
0.1
0.5
1
5
10 14
0 .1
0.2
0.5
1
C ol l ec t or C ur r en t I
C
( A)
5
10
14
Co l l ect o r Cu rre nt I
C
(A )
Safe Operating Area
(Single Pulse)
50
10
Reverse Bias Safe Operating Area
50
1 30
P c – Ta Derating
s
Ma x im um P ow e r D i s s i p a ti o n P
C
( W )
0
µ
10
Co lle ct o r C u r r e n t I
C
( A )
C olle ct o r C u r r e n t I
C
( A )
10
5
1 00
W
ith
In
fin
ite
he
at
si
nk
1
0.5
Without Heatsink
Natural Cooling
1
0.5
Without Heatsink
Natural Cooling
L=3mH
I
B2
=–1.0A
Duty:less than 1%
50
0.1
10
50
100
5 00
1000
0.1
50
1 00
50 0
1 00 0
3. 5
0
W i t ho u t He a t s i n k
0
25
50
75
10 0
125
15 0
Co l l ec t or - Emi t te r V ol ta ge V
C E
(V )
Co ll e ct o r - Em i t te r Vo lt a ge V
C E
( V)
Am bi e nt T e m pe r a t u r e T a ( ˚ C )
118
SANKEN [ SANKEN ELECTRIC ]
