2SC4546
Silicon NPN Triple Diffused Planar Transistor
(High Voltage and Ultra-high Speed Switchihg Transistor)
Application :
Switching Regulator, Lighting Inverter and General Purpose
s
Absolute maximum ratings
(Ta=25°C)
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
Tj
T
stg
Ratings
600
400
7
7(
Pulse
14)
2
30(Tc=25°C)
150
–55 to +150
Unit
V
V
V
A
A
W
°C
°C
s
Electrical Characteristics
Symbol
I
CBO
I
EBO
V
(BR)CEO
h
FE
V
CE
(sat)
V
BE
(sat)
f
T
C
OB
Conditions
V
CB
=600V
V
EB
=7V
I
C
=25mA
V
CE
=4V, I
C
=3A
I
C
=3A, I
B
=0.6A
I
C
=3A, I
B
=0.6A
V
CE
=12V, I
E
=–0.5A
V
CB
=10V, f=1MHz
Ratings
100
max
100
max
400
min
10 to 25
0.7
max
1.3
max
10
typ
55
typ
(Ta=25°C)
Unit
External Dimensions
FM20(TO220F)
4.0
±0.2
10.1
±0.2
4.2
±0.2
2.8 c0.5
µ
A
V
V
V
MHz
pF
13.0min
16.9
±0.3
8.4
±0.2
µ
A
1.35
±0.15
1.35
±0.15
0.85
+0.2
-0.1
0.45
+0.2
-0.1
2.54
2.2
±0.2
2.4
±0.2
s
Typical Switching Characteristics (Common Emitter)
V
CC
(V)
200
R
L
(Ω)
67
I
C
(A)
3
V
BB1
(V)
10
V
BB2
(V)
–5
I
B1
(A)
0.6
I
B2
(A)
–1.2
t
on
(
µ
s)
0.5
max
t
stg
(
µ
s)
2
max
t
f
(
µ
s)
0.15
max
2.54
3.9
B C E
I
C
– V
C E
Characteristics
(Typical)
7
1A
V
C E
(sat) – I
C
Characteristics
(Typical)
C ol l e c t o r - E m i tt e r S at u r a t i o n V o lt a g e V
C E(s a t)
(V )
1.0
I
C /
I
B
= 5 Co ns t .
I
C
– V
B E
Temperature Characteristics
(Typical)
7
( V
CE
= 4 V )
800mA
6
C o l l e c t o r Cu r r e n t I
C
( A )
600mA
6
C o l l e c to r C u r r e n t I
C
( A )
5
40 0m A
5
30 0m A
4
200 mA
4
0.5
125˚C (Case Temp)
Tem
e Te
25˚C
(Cas
–30˚C (Case Temp)
0
0
1
2
3
4
0
0.02
0.05
0. 1
0.5
1
5
10
0
0
0.5
B a s e - Em i t t o r Vo l t a g e V
BE
( V )
125
1
1
–30˚C
˚C
I
B
=50 mA
(Ca
25˚C (Case Temp)
se
2
2
(Case
Temp
)
mp)
p)
3
3
±0.2
0.8
±0.2
a
b
ø3.3
±0.2
Weight : Approx 2.0g
a. Part No.
b. Lot No.
1.0
Co ll e ct o r -Em i t t er Vo l tag e V
C E
( V)
Co l le c to r C ur r en t I
C
( A)
(V
C E
= 4 V )
50
D C C u r r e n t G ai n h
FE
2
Sw i t c hi n g T i m e
t
on•
t
st g•
t
f
(
µ
s )
Transient Thermal Resistance
θ
j- a
( ˚ C / W )
h
FE
– I
C
Temperature Characteristics
(Typical)
125˚C
t
o n
•t
s tg
• t
f
– I
C
Characteristics
(Typical)
t
s tg
θ
j - a
– t Characteristics
4
1
0.5
t
f
t
on
0.1
0.05
0.02
0.2
V
CC
2 0 0 V
I
C
: I
B1
:I
B 2
= 5 :1 : –2
0.5
1
5
C ol l ec t or C ur r en t I
C
( A)
25˚C
–30˚C
1
10
0 .5
0 .3
5
0.02
0.05
0. 1
0. 5
1
5
7
1
10
Time t(ms)
100
1 0 00
C o ll e ct o r Cu rre nt I
C
( A)
Safe Operating Area
(Single Pulse)
20
10
5
Col lec t o r C u r r e n t I
C
( A)
10
Reverse Bias Safe Operating Area
20
10
30
Pc – Ta Derating
s
5
Ma x im um P ow e r D i s s i p a ti o n P
C
( W )
0
µ
W
ith
Co lle ct o r C u r r e n t I
C
( A )
20
In
fin
ite
he
at
si
1
1
Without Heatsink
Natural Cooling
L=3mH
I
B2
=–0.5A
Duty:less than 1%
nk
0.5
Without Heatsink
Natural Cooling
0.5
10
W i th o u t H e a t s i n k
2
0.1
10
50
10 0
50 0 7 0 0
0.1
10
50
10 0
50 0 70 0
0
0
25
50
75
100
1 25
1 50
C ol l ec t or - Emi t t er Vo l t ag e V
C E
(V )
Col l e ct or - Em i t te r Vol t ag e V
C E
( V)
Am b i e n t T e m pe r a t u r e T a( ˚ C)
115
SANKEN [ SANKEN ELECTRIC ]
