2SC4518/4518A
Silicon NPN Triple Diffused Planar Transistor
(High Voltage Switchihg Transistor)
Application :
Switching Regulator, Lighting Inverter and General Purpose
s
Absolute maximum ratings
(Ta=25°C)
Ratings
Symbol
2SC4518 2SC4518A
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
Tj
T
stg
900
550
7
5(
Pulse
10)
2.5
35(Tc=25°C)
150
–55 to +150
1000
Unit
V
V
V
A
A
W
°C
°C
s
Electrical Characteristics
Symbol
I
CBO
I
EBO
V
(BR)CEO
h
FE
V
CE
(sat)
V
BE
(sat)
f
T
C
OB
Conditions
V
CB
=800V
V
EB
=7V
I
C
=10mA
V
CE
=4V, I
C
=1.8A
I
C
=1.8A, I
B
=0.36A
I
C
=1.8A, I
B
=0.36A
V
CE
=12V, I
E
=–0.35A
V
CB
=10V, f=1MHz
Ratings
(Ta=25°C)
2SC4518 2SC4518A
100
max
100
max
550
min
10 to 25
0.5
max
1.2
max
6
typ
50
typ
V
V
MHz
pF
Unit
External Dimensions
FM20(TO220F)
4.0
±0.2
10.1
±0.2
4.2
±0.2
2.8 c0.5
µ
A
V
16.9
±0.3
8.4
±0.2
µ
A
13.0min
1.35
±0.15
1.35
±0.15
0.85
+0.2
-0.1
0.45
+0.2
-0.1
2.54
2.2
±0.2
2.4
±0.2
s
Typical Switching Characteristics (Common Emitter)
V
CC
(V)
250
R
L
(Ω)
139
I
C
(A)
1.8
V
BB1
(V)
10
V
BB2
(V)
–5
I
B1
(A)
0.27
I
B2
(A)
–0.9
t
on
(
µ
s)
0.7
max
t
stg
(
µ
s)
4
max
t
f
(
µ
s)
0.5
max
2.54
3.9
B C E
±0.2
0.8
±0.2
a
b
ø3.3
±0.2
Weight : Approx 2.0g
a. Part No.
b. Lot No.
I
C
– V
CE
Characteristics
(Typical)
5
70
0
mA
600mA
V
CE
(sat),V
BE
(sat) – I
C
Temperature Characteristics
(Typical)
Co l l e c t o r - Em i t t e r Sa t u r a ti o n V o lt a ge V
C E(s at)
(V )
Ba s e- E m i t t er S a t ur a t i o n Vo l ta g e V
BE (s at)
( V )
1.5
I
C
/ I
B
= 5 Co ns t .
I
C
– V
B E
Temperature Characteristics
(Typical)
5
( V
CE
=4 V )
C ol l e c t o r C u r r e nt I
C
( A)
25 0m A
3
1.0
V
B E
( s a t)
C ol l e c t o r C ur r en t I
C
( A)
0 .5
1
5
10
4
40 0m A
4
3
15 0m A
2
2
0.5
I
B
=50mA
1
1
V
C E
( s at )
0
0.03 0.05
0. 1
0
0
0. 2
0.4
0. 6
0.8
1. 0
1.2
0
0
1
2
3
4
Col l e ct o r- Em i t ter Vo l t ag e V
C E
(V )
C ol l e ct or C u r r e nt I
C
( A)
B a s e - E m i tt o r Vo l ta g e V
B E
( V)
(V
C E
=4 V)
50
Transient Thermal Resistance
θ
j-a
(˚ C/ W )
h
FE
– I
C
Temperature Characteristics
(Typical)
125˚C
D C C u r r e n t Gai n h
FE
S w i t c h i n g T i m e
t
on •
t
s tg•
t
f
(
µ
s )
7
5
t
o n
•t
s tg
•t
f
– I
C
Characteristics
(Typical)
θ
j - a
– t Characteristics
4
25˚C
V
C C
2 5 0V
I
C
:I
B 1
: I
B 2
= 1: 0. 1 5: –0 . 5
1
t
f
0.5
t
on
0.1
0.2
t
s tg
–55˚C
1
10
0.5
0.3
5
0.02
0.05
0. 1
0 .5
1
5
0. 5
1
5
1
10
Time t(ms)
100
1000
C ol l ec t or C u rre nt I
C
(A )
C ol l ec t or C ur r en t I
C
( A)
Safe Operating Area
(Single Pulse)
20
10
5
Co llec to r C u r r e n t I
C
( A )
Co ll ec to r Cu r r e n t I
C
(A )
10
0
µ
Reverse Bias Safe Operating Area
20
10
5
Ma x imu m P ow e r D i s s i p a t i o n P
C
(W )
35
Pc – Ta Derating
s
30
W
ith
In
fin
ite
1
0.5
1
0 .5
Without Heatsink
Natural Cooling
L=3mH
I
B2
=–1.0A
Duty:less than 1%
2SC 45 1 8
10 0
50 0
20
he
at
si
nk
10
0.1
0.05
0.03
10
Without Heatsink
Natural Cooling
0 .1
0.05
W i t h o ut H e a ts i n k
2S C 45 1 8 A
10 00
2
0
0
25
50
75
1 00
125
15 0
50
10 0
5 00
1000
0.03
50
Co ll e ct o r- Em i t ter Vo l tag e V
C E
( V)
Co l le c to r - E m it t er Vo l ta ge V
C E
( V)
A m b i en t T e m p e r a tu r e T a ( ˚ C )
114
SANKEN [ SANKEN ELECTRIC ]
