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2SC4495_01 参数 Datasheet PDF下载

2SC4495_01图片预览
型号: 2SC4495_01
PDF下载: 下载PDF文件 查看货源
内容描述: 硅NPN三重扩散平面晶体管 [Silicon NPN Triple Diffused Planar Transistor]
分类和应用: 晶体晶体管
文件页数/大小: 1 页 / 27 K
品牌: SANKEN [ SANKEN ELECTRIC ]
   
High hFE
L
OW
V
CE
(sat)
Silicon NPN Triple Diffused Planar Transistor
s
Absolute maximum ratings
(Ta=25°C)
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
Tj
T
stg
Ratings
80
50
6
3
1
25(Tc=25°C)
150
–55 to +150
Unit
V
V
V
A
A
W
°C
°C
2SC4495
Application :
Audio Temperature Compensation and General Purpose
(Ta=25°C)
Ratings
10
max
10
max
50
min
500
min
0.5
max
40
typ
30
typ
V
MHz
pF
13.0min
s
Electrical Characteristics
Symbol
I
CBO
I
EBO
V
(BR)CEO
h
FE
V
CE
(sat)
f
T
C
OB
Conditions
V
CB
=80V
V
EB
=6V
I
C
=25mA
V
CE
=4V, I
C
=0.5A
I
C
=1A, I
B
=20mA
V
CE
=12V, I
E
=–0.1A
V
CB
=10V,f=1MHz
External Dimensions
FM20(TO220F)
4.0
±0.2
10.1
±0.2
4.2
±0.2
2.8 c0.5
Unit
µ
A
V
16.9
±0.3
8.4
±0.2
µ
A
1.35
±0.15
1.35
±0.15
0.85
+0.2
-0.1
0.45
+0.2
-0.1
2.54
2.2
±0.2
2.4
±0.2
s
Typical Switching Characteristics (Common Emitter)
V
CC
(V)
20
R
L
(Ω)
20
I
C
(A)
1
V
BB1
(V)
10
V
BB2
(V)
–5
I
B1
(mA)
15
I
B2
(mA)
–30
t
on
(
µ
s)
0.45
typ
t
stg
(
µ
s)
1.60
typ
t
f
(
µ
s)
0.85
typ
2.54
3.9
B C E
I
C
– V
CE
Characteristics
(Typical)
C o l l ec t or - Em i t t e r Sa t ur at i on V ol t ag e V
CE (sa t)
( V )
3
30
m
A
V
CE
( sa t) – I
B
Characteristics
(Typical)
1.5
I
C
– V
B E
Temperature Characteristics
(Typical)
3
(V
CE
= 4 V )
18
mA
12m
A
8mA
2.5
C o l l e c t o r C u r r e nt I
C
( A)
C ol l e c t o r C ur r e nt I
C
( A)
2
5m A
3mA
1
2
1.5
em
p)
mp)
Cas
1mA
(Cas
e Te
3A
2A
eT
1
0.5
1
I
B
=0.5mA
125
I
C
=1A
0
0
0
0
1
2
3
4
5
6
1
10
100
1000
0
0. 5
25˚C
0.5
–55˚C
(C
˚C
(
ase Te
m
p)
2mA
±0.2
0.8
±0.2
a
b
ø3.3
±0.2
Weight : Approx 2.0g
a. Part No.
b. Lot No.
1
1.5
C ol l e ct or - Emi t te r V ol tag e V
C E
(V)
Bas e C ur r en t I
B
( m A)
Ba s e - E m i tt o r V ol t ag e V
B E
( V )
h
FE
– I
C
Characteristics
(Typical)
( V
CE
= 4 V )
3000
D C Cu rr en t G ai n h
F E
h
F E
– I
C
Temperature Characteristics
(Typical)
( V
C E
= 4 V)
5000
D C Cu r r en t G a i n h
FE
Transient Thermal Resistance
θ
j- a
(˚ C/ W )
7
5
θ
j - a
– t Characteristics
Typ
1000
125˚C
25˚C
–55˚C
1000
500
500
100
50
20
0 .0 1
100
0.01
0. 1
0 .5
1
3
0.1
0. 5
1
3
1
1
10
100
T i m e t( m s )
1 00 0 2 00 0
C ol l e ct or C u rre nt I
C
(A)
Co l le c to r Cu r r en t I
C
( A)
f
T
– I
E
Characteristics
(Typical)
(V
C E
=1 2 V )
60
10
5
C ut- off Fr eq u e n c y f
T
( M H
Z
)
Safe Operating Area
(Single Pulse)
30
1m
10
m
s
Pc – Ta Derating
Natural Cooling
Silicone Grease
Heatsink: Aluminum
in mm
20
W
ith
In
s
Co lle cto r C u r re n t I
C
( A )
Typ
40
DC
1
0 .5
M ax im um P ow er D i s s i p a t i o n P
C
( W )
10
0m
s
fin
150x150x2
1 00x
1 0
10
0x
2
ite
he
at
20
si
nk
Without Heatsink
Natural Cooling
0 .1
50x50x2
Without Heatsink
2
0
–0.005 –0.01
0.05
–0 .1
Em i t t er C u rren t I
E
(A )
–1
3
5
10
50
10 0
C o ll e ct o r - Em i t t er Vo lt a ge V
C E
( V)
0
0
25
50
75
100
12 5
15 0
Am bi e nt T e m p e r a t u r e T a ( ˚ C )
110