2SC4434
Silicon NPN Triple Diffused Planar Transistor
(High Voltage and High Speed Switchihg Transistor)
s
Absolute maximum ratings
(Ta=25°C)
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
Tj
T
stg
2SC4434
500
400
10
15(
Pulse
30)
5
120(Tc=25°C)
150
–55 to +150
Unit
V
V
V
A
A
W
°C
°C
Application :
Switching Regulator, Lighting Inverter, and General Purpose
(Ta=25°C)
s
Electrical Characteristics
Symbol
I
CBO
I
EBO
V
(BR)CEO
h
FE
V
CE
(sat)
V
BE
(sat)
f
T
C
OB
Conditions
V
CB
=500V
V
EB
=10V
I
C
=25mA
V
CE
=4V, I
C
=8A
I
C
=8A, I
B
=1.6A
I
C
=8A, I
B
=1.6A
V
CE
=12V, I
E
=–1.5A
V
CB
=10V, f=1MHz
External Dimensions
MT-100(TO3P)
5.0
±0.2
15.6
±0.4
9.6
2.0
1.8
4.8
±0.2
2.0
±0.1
2SC4434
100
max
100
max
400
min
10 to 25
0.7
max
1.3
max
10
typ
135
typ
Unit
µ
A
µ
A
V
V
MHz
pF
20.0min
19.9
±0.3
4.0
a
b
ø3.2
±0.1
4.0max
V
2
3
1.05
+0.2
-0.1
0.65
+0.2
-0.1
1.4
s
Typical Switching Characteristics (Common Emitter)
V
CC
(V)
200
R
L
(Ω)
25
I
C
(A)
8
V
BB1
(V)
10
V
BB2
(V)
–5
I
B1
(A)
1.6
I
B2
(A)
–3.2
t
on
(
µ
s)
0.5
max
t
stg
(
µ
s)
2.0
max
t
f
(
µ
s)
0.15
max
5.45
±0.1
B
C
E
5.45
±0.1
Weight : Approx 6.0g
a. Type No.
b. Lot No.
I
C
– V
CE
Characteristics
(Typical)
10
A
1.2
V
CE
(sat),V
BE
(sat) – I
C
Temperature Characteristics
(Typical)
C ol l e c t o r - E m i tt e r Sa t u r a t i o n V o lt a ge V
C E(s at)
( V )
B a s e - Em i t t e r Sa t u r a ti o n V o l t a ge V
B E(s at)
( V)
( I
C
/ I
B
= 5)
I
C
– V
B E
Temperature Characteristics
(Typical)
15
14
12
C ol l e c t o r C u r r e nt I
C
( A)
10
( V
CE
= 4 V )
1A
8
C o l l e c to r C u r r e n t I
C
( A)
60 0m A
6
400mA
1
e Temp)
25˚C (Cas
)
se Temp
75˚C (Ca
Temp)
(Case
150˚C
V
B E
( s at )
)
75˚C
8
em
p)
as
(C
˚C
eT
emp
(C
as
eT
4
200 mA
6
C
I
B
=100 mA
75˚
C
2
V
C E
( sa t )
0
0 .0 5
2
0
0
1
2
3
4
0.1
0.5
1
5
10
0
0
15
0
0.5
B a s e - Em i t t o r Vo l t a g e V
BE
( V )
25˚
0
15
25
˚
˚C
4
se
Tem
C (C
p)
ase
Tem
p)
(Ca
1.0
Co l l ec t or - Emi t t er Vo l ta ge V
C E
(V )
C o ll e ct o r Cu r r e nt I
C
( A)
(V
C E
= 4 V )
50
75 ˚C
D C C ur re nt Ga i n h
FE
25 ˚ C
S w i t c h i ng T i m e
t
o n•
t
s tg•
t
f
(
µ
s )
1 50 ˚C
Transient Thermal Resistance
θ
j- a
( ˚ C / W )
h
FE
– I
C
Temperature Characteristics
(Typical)
5
t
o n
•t
s t g
•t
f
– I
C
Characteristics
(Typical)
θ
j - a
– t Characteristics
2
t
s tg
1 V
CC
2 0 0 V
I
C
:I
B1
:– I
B 2
= 5: 1: 2
0.5
1
0.5
t
on
0.1
0.05
0.5
1
t
f
5
C o ll e ct o r Cu r r e n t I
C
( A)
10
15
10
5
0.05
0.1
0. 5
1
5
10 15
0.1
1
10
Time t(ms)
10 0
1000
Co l l ect o r Cu rre nt I
C
(A)
Safe Operating Area
(Single Pulse)
40
40
10
0
µ
s
Reverse Bias Safe Operating Area
12 0
Pc – Ta Derating
Ma x im um P ow e r D i s s i p a t i on P
C
( W )
10 0
10
C olle c to r C u r r e n t I
C
( A )
C olle c to r C u r r e n t I
C
(A )
5
10
5
W
ith
In
fin
ite
he
at
si
nk
1
0.5
Without Heatsink
Natural Cooling
1
0.5
Without Heatsink
Natural Cooling
L=3mH
I
B2
=–1A
Duty:less than 1%
50
0.1
5
10
50
10 0
500
Co ll e ct o r- Em i t t er Vo l t ag e V
C E
(V)
0.1
5
10
50
10 0
5 00
3. 5
0
W i t ho u t He a t s i nk
0
25
50
75
100
1 25
1 50
Col l ec t or - Em i tt e r Vol t ag e V
C E
( V)
Am b i e n t T e m pe r a t u r e T a( ˚ C )
104
SANKEN [ SANKEN ELECTRIC ]
