2SC4301
Silicon NPN Triple Diffused Planar Transistor
(High Voltage Switchihg Transistor)
Application :
Switching Regulator, Lighting Inverter and General Purpose
s
Absolute maximum ratings
(Ta=25°C)
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
Tj
T
stg
Ratings
900
800
7
7(
Pulse
14)
3.5
80(Tc=25°C)
150
–55 to +150
Unit
V
V
V
A
A
W
°C
°C
s
Electrical Characteristics
Symbol
I
CBO
I
EBO
V
(BR)CEO
h
FE
V
CE
(sat)
V
BE
(sat)
f
T
C
OB
Conditions
V
CB
=800V
V
EB
=7V
I
C
=10mA
V
CE
=4V, I
C
=3A
I
C
=3A, I
B
=0.6A
I
C
=3A, I
B
=0.6A
V
CE
=12V, I
E
=–1A
V
CB
=10V, f=1MHz
(Ta=25°C)
Ratings
100
max
100
max
800
min
10 to 30
0.5
max
1.2
max
6
typ
105
typ
V
V
MHz
pF
Unit
External Dimensions
FM100(TO3PF)
0.8
±0.2
15.6
±0.2
5.5
±0.2
3.45
±0.2
5.5
ø3.3
±0.2
1.6
µ
A
V
23.0
±0.3
9.5
±0.2
µ
A
a
b
16.2
1.75
2.15
1.05
+0.2
-0.1
5.45
±0.1
1.5
4.4
5.45
±0.1
1.5
0.65
+0.2
-0.1
3.3
0.8
s
Typical Switching Characteristics (Common Emitter)
V
CC
(V)
250
R
L
(Ω)
83
I
C
(A)
3
V
BB1
(V)
10
V
BB2
(V)
–5
I
B1
(A)
0.45
I
B2
(A)
–1.5
t
on
(
µ
s)
1
max
t
stg
(
µ
s)
5
max
t
f
(
µ
s)
1
max
3.35
B
C
E
Weight : Approx 6.5g
a. Part No.
b. Lot No.
I
C
– V
CE
Characteristics
(Typical)
1A
700 mA
V
CE
(sat),V
BE
(sat) – I
C
Temperature Characteristics
(Typical)
C o l l e c to r - E m i t t er S a tu r a t i o n Vo lt a g e V
CE (sat)
( V )
B as e- Em i t t e r Sa t ur at i on Vo l ta g e V
BE (sat)
( V )
( I
C
/I
B
= 5 )
I
C
– V
B E
Temperature Characteristics
(Typical)
7
( V
CE
=4 V )
6
500m A
1
–55˚C (Cas
25˚C (C
V
B E
( s at )
e Temp)
p)
6
C o l l ec t or C u r r e n t I
C
( A)
C ol l e c t o r C ur r e nt I
C
( A)
p)
4
300 mA
ase Tem
4
Temp
Tem
)
ase
2
(C
12
5˚
V
C E
( sa t )
0
0.02
0. 0 5
0 .1
0.5
1
–5
0
25
C
˚C
5˚C
0
1
2
3
4
5 7
0
0
0. 2
0.4
125˚
2
0.6
0.8
–55˚C (C
eT
25˚C
I
B
=100mA
as
C (C
(Case
emp
125˚C
(Case
ase Tem
200mA
Temp
)
)
p)
1. 0
3.0
1.2
Co l l ect o r - Em i tte r V ol ta ge V
C E
( V)
C ol l ec t or C ur r e nt I
C
( A)
B a s e - Em i t t o r Vo l ta g e V
BE
( V)
(V
C E
= 4 V )
50
DC C ur r e n t Gai n h
F E
10
Transient Thermal Resistance
θ
j-a
( ˚ C / W )
h
FE
– I
C
Characteristics
(Typical)
5˚
S wi t c hi n g T i m e
t
on•
t
s tg•
t
f
(
µ
s )
t
o n
•t
s t g
• t
f
– I
C
Characteristics
(Typical)
θ
j- a
– t Characteristics
2
12
25˚C
C
5
V
CC
250V
I
C
:I
B1
:I
B2
=2:0.3:–1 Const.
t
s tg
1
–55 ˚C
0. 5
1
0.5
t
on
0.2
0.1
t
f
10
5
0. 02
0.05
0.1
0. 5
1
5
7
0 .5
1
5
7
0. 1
1
10
Time t(ms)
1 00
1 0 00
C ol l e ct o r Cur ren t I
C
(A)
C ol l e ct or C u r r e nt I
C
( A)
Safe Operating Area
(Single Pulse)
20
10
10
0
µ
s
Reverse Bias Safe Operating Area
20
10
5
Co llec to r C u r r e n t I
C
( A )
80
P c – Ta Derating
M ax im um P ow er Di s s i p a ti o n P
C
( W )
Co lle cto r C u r r e nt I
C
( A )
5
60
W
ith
In
fin
ite
he
40
at
si
1
1
Without Heatsink
Natural Cooling
L=3mH
I
B2
=–1.0A
Duty :less than1%
nk
0.5
Without Heatsink
Natural Cooling
0 .5
20
W i t h o u t H e a ts i n k
0.1
50
1 00
50 0
1000
0 .1
50
10 0
5 00
100 0
3. 5
0
0
25
50
75
100
1 25
150
C ol l e ct or - Emi t te r V ol ta ge V
C E
(V)
Co l le c to r - Em it t er Vo l ta ge V
C E
( V)
Am b i e n t T e m p er a t u r e T a( ˚ C )
100
SANKEN [ SANKEN ELECTRIC ]
