2SC4300
Silicon NPN Triple Diffused Planar Transistor
(High Voltage Switchihg Transistor)
s
Absolute maximum ratings
(Ta=25°C)
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
Tj
T
stg
Ratings
900
800
7
5(Pulse10)
2.5
75(Tc=25°C)
150
–55 to +150
Unit
V
V
V
A
A
W
°C
°C
Application :
Switching Regulator and General Purpose
(Ta=25°C)
Ratings
100
max
100
max
800
min
10 to 30
0.5
max
1.2
max
6
typ
75
typ
V
V
16.2
s
Electrical Characteristics
Symbol
I
CBO
I
EBO
V
(BR)CEO
h
FE
V
CE
(sat)
V
BE
(sat)
f
T
C
OB
Conditions
V
CB
=800V
V
EB
=7V
I
C
=10mA
V
CE
=4V, I
C
=2A
I
C
=2A, I
B
=0.4A
I
C
=2A, I
B
=0.4A
V
CE
=12V, I
E
=–0.5A
V
CB
=10V, f=1MHz
External Dimensions
FM100(TO3PF)
0.8
±0.2
15.6
±0.2
5.5
±0.2
3.45
±0.2
5.5
ø3.3
±0.2
1.6
Unit
µ
A
23.0
±0.3
V
9.5
±0.2
µ
A
a
b
MHz
pF
1.75
2.15
1.05
+0.2
-0.1
5.45
±0.1
5.45
±0.1
4.4
1.5
0.65
+0.2
-0.1
3.3
0.8
s
Typical Switching Characteristics (Common Emitter)
V
CC
(V)
250
R
L
(Ω)
125
I
C
(A)
2
V
BB1
(V)
10
V
BB2
(V)
–5
I
B1
(A)
0.3
I
B2
(A)
–1
t
on
(
µ
s)
1
max
t
stg
(
µ
s)
5
max
t
f
(
µ
s)
1
max
3.35
1.5
B
C
E
Weight : Approx 6.5g
a. Part No.
b. Lot No.
I
C
– V
C E
Characteristics
(Typical)
5
V
CE
(sat),V
BE
(sat) – I
C
Temperature Characteristics
(Typical)
Co l l e c t o r - E m i tt e r Sa t u r a t i o n V o lt a ge V
C E(s a t)
(V )
B as e- Em i t t e r Sa t ur at i on Vo l ta g e V
B E(s at)
( V)
( I
C
/I
B
= 5)
I
C
– V
B E
Temperature Characteristics
(Typical)
5
( V
CE
= 4V )
700mA
60 0m A
500 mA
2
C o l l ec t or C u r r e n t I
C
( A )
300m A
3
200mA
C o l l e c t o r C u r r e n t I
C
( A)
4
400 mA
4
3
mp)
Temp
)
e Te
(Cas
2
I
B
=100mA
1
m
p)
25˚
C
–55˚C
1
1
V
C E
( sa t )
0
0.03 0.05
0. 1
0. 5
C
125˚C
(
a
se
0
Te
0
1
2
3
4
1
5
10
0
0
0.2
0.4
0.6
0.8
–55˚C (C
–55˚C (Case Temp)
25˚C (Case Temp)
e Temp)
125˚C (Cas
2
125˚
C
25˚C
(Case
V
B E
( sa t )
ase Tem
p)
1.0
Co l l ec t or - Emi t t er Vo l ta ge V
C E
(V )
C ol l ec t or C ur r e nt I
C
( A)
Ba s e- E m i t t or V o l t a ge V
BE
( V )
(V
C E
= 4 V )
50
S wi t c hi n g T i m e
t
on•
t
st g•
t
f
(
µ
s )
DC C ur re nt Ga i n h
F E
10
t
s tg
V
CC
250V
I
C
:I
B1
:–I
B2
=2:0.3:1 Const.
Transient Thermal Resistance
θ
j- a
(˚ C/ W )
h
F E
– I
C
Characteristics
(Typical)
t
o n
•t
s tg
• t
f
– I
C
Characteristics
(Typical)
θ
j - a
– t Characteristics
2
125˚C
25˚C
5
1
–55 ˚C
0.5
1
0 .5
t
on
0 .2
0 .1
0. 5
t
f
10
5
0.02
0.05
0. 1
0. 5
1
5
1
5
0.1
1
10
Time t(ms)
10 0
3.0
1 .2
1000
Co l le ct o r C ur ren t I
C
(A )
C ol l e ct or C u r r e nt I
C
( A)
Safe Operating Area
(Single Pulse)
20
10
5
Co lle cto r Cu r re n t I
C
( A)
10
10
µ
s
Reverse Bias Safe Operating Area
20
10
80
Pc – Ta Derating
1m
0
µ
s
s
5
Co lle cto r C ur re n t I
C
( A )
M ax im um P o w e r Di s s i p a t i o n P
C
( W )
60
W
ith
In
1
0.5
fin
1
0 .5
ite
he
40
at
si
nk
0.1
0.05
Without Heatsink
Natural Cooling
0 .1
0.05
Without Heatsink
Natural Cooling
L=3mH
I
B2
=–1.0A
Duty:less than 1%
20
0.01
10
50
1 00
5 00
1000
0.01
50
1 00
50 0
10 00
3 .5
0
W i t ho u t He a t s i nk
0
50
100
150
Co l l ect o r - Em i t t er V ol ta ge V
C E
(V)
C o ll e ct o r - Em i t t er Vo lt a ge V
C E
( V)
A m b i e n t T em p er at u r e T a ( ˚ C )
99
SANKEN [ SANKEN ELECTRIC ]
