2SC4296
Silicon NPN Triple Diffused Planar Transistor
(High Voltage and High Speed Switchihg Transistor)
s
Absolute maximum ratings
(Ta=25°C)
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
Tj
T
stg
2SC4296
500
400
10
10(
Pulse
20)
4
75(Tc=25°C)
150
–55 to +150
Unit
V
V
V
A
A
W
°C
°C
Application :
Switching Regulator and General Purpose
External Dimensions
FM100(TO3PF)
0.8
±0.2
15.6
±0.2
5.5
±0.2
3.45
±0.2
5.5
ø3.3
±0.2
1.6
s
Electrical Characteristics
Symbol
I
CBO
I
EBO
V
(BR)CEO
h
FE
V
CE
(sat)
V
BE
(sat)
f
T
C
OB
Conditions
V
CB
=500V
V
EB
=10V
I
C
=25mA
V
CE
=4V, I
C
=6A
I
C
=6A, I
B
=1.2A
I
C
=6A, I
B
=1.2A
V
CE
=12V, I
E
=–0.7A
V
CB
=10V, f=1MHz
(Ta=25°C)
2SC4296
100
max
100
max
400
min
10 to 30
0.5
max
1.3
max
10
typ
85
typ
V
V
MHz
pF
Unit
µ
A
V
23.0
±0.3
9.5
±0.2
µ
A
a
b
16.2
1.75
2.15
1.05
+0.2
-0.1
5.45
±0.1
1.5
4.4
5.45
±0.1
1.5
0.65
+0.2
-0.1
3.3
0.8
s
Typical Switching Characteristics (Common Emitter)
V
CC
(V)
200
R
L
(Ω)
33
I
C
(A)
6
V
BB1
(V)
10
V
BB2
(V)
–5
I
B1
(A)
0.6
I
B2
(A)
–1.2
t
on
(
µ
s)
1
max
t
stg
(
µ
s)
3
max
t
f
(
µ
s)
0.5
max
3.35
B
C
E
Weight : Approx 6.5g
a. Type No.
b. Lot No.
I
C
– V
C E
Characteristics
(Typical)
10
A
1.2
1A
V
CE
(sat),V
BE
(sat) – I
C
Temperature Characteristics
(Typical)
C o l l e c t o r - E m i t te r S a tu r a t i o n Vo lt a g e V
C E( sa t)
(V )
Ba s e- E m i t t er S a t ur a t i o n Vo l ta g e V
BE (sat)
( V )
1.4
( I
C
/ I
B
= 5)
I
C
– V
B E
Temperature Characteristics
(Typical)
10
( V
CE
= 4 V )
8
C o l l e c t o r Cu r r e n t I
C
( A )
60 0m A
8
1
C o l l e c t o r C u r r e nt I
C
( A)
6
400mA
6
mp
)
V
BE
( s a t)
emp
)
(Ca
se T
se
˚C
V
C E
( sa t)
0
0.02
0.05
0. 1
0. 5
1
5
10
0
0
0 .2
0. 4
0. 6
0.8
1. 0
1. 2
0
0
1
2
3
4
C ol l e ct or - Em it t er Vo l t ag e V
C E
(V )
C ol l ec t or C ur r en t I
C
( A)
B as e- Em i t t or V o l t a g e V
BE
( V )
(V
C E
= 4 V )
100
Sw i t c hi n g T i m e
t
on•
t
st g•
t
f
(
µ
s )
D C C u r r e n t G ai n h
FE
10
5
V
C C
2 0 0V
I
C
:I
B 1
:– I
B2
= 1 0 :1 :2
1
0.5
t
f
0.1
0.1
0 .5
1
5
10
t
on
t
s tg
Transient Thermal Resistance
θ
j -a
( ˚ C / W )
h
FE
– I
C
Characteristics
(Typical)
t
o n
•t
s t g
• t
f
– I
C
Characteristics
(Typical)
θ
j - a
– t Characteristics
3
50
125˚C
25˚C
–55˚C
1
10
0. 5
5
0. 02
0.05
0. 1
0 .5
1
5
10
0. 3
1
10
Time t(ms)
100
–55˚
2
2
25˚C
125
I
B
=
100m A
C (C
ase T
4
200 mA
4
(Ca
emp)
Te
3.0
10 0 0
C o ll e ct o r Curr en t I
C
( A)
C ol l e ct or C u r r e nt I
C
( A)
Safe Operating Area
(Single Pulse)
30
1m
s
Reverse Bias Safe Operating Area
30
80
Pc – Ta Derating
50
10
m
5
Co llec t o r C u r r e n t I
C
( A)
s
5
Co llec t o r C u r r e n t I
C
( A)
Ma x im um P ow e r D i s s i p a ti o n P
C
( W )
10
10
µ
s
0
µ
s
10
60
W
ith
In
fin
ite
1
0.5
1
0 .5
Without Heatsink
Natural Cooling
L=3mH
–I
B2
=1A
Duty:less than 1%
he
40
at
si
nk
0.1
0.05
0.02
5
Without Heatsink
Natural Cooling
0 .1
0.05
0.02
5
20
10
50
1 00
500
10
50
10 0
50 0
3.5
0
W i t ho u t He a t s i nk
0
50
10 0
150
Co l l ect o r - Em i t t er Vo l t ag e V
C E
(V )
Co l le c to r - Em it t er Vo l ta ge V
C E
( V)
A m b i e n t T em p e r a tu r e T a ( ˚ C )
94
SANKEN [ SANKEN ELECTRIC ]
