2SC4140
Silicon NPN Triple Diffused Planar Transistor
(High Voltage and High Speed Switchihg Transistor)
s
Absolute maximum ratings
(Ta=25°C)
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
Tj
T
stg
Ratings
500
400
10
18(
Pulse
36)
6
130(Tc=25°C)
150
–55 to +150
Unit
V
V
V
A
A
W
°C
°C
Application :
Switching Regulator and General Purpose
External Dimensions
MT-100(TO3P)
5.0
±0.2
15.6
±0.4
9.6
2.0
1.8
4.8
±0.2
2.0
±0.1
s
Electrical Characteristics
Symbol
I
CBO
I
EBO
V
(BR)CEO
h
FE
V
CE
(sat)
V
BE
(sat)
f
T
C
OB
Conditions
V
CB
=500V
V
EB
=10V
I
C
=25mA
V
CE
=4V, I
C
=10A
I
C
=10A, I
B
=2A
I
C
=10A, I
B
=2A
V
CE
=12V, I
E
=–2.0A
V
CB
=10V, f=1MHz
Ratings
100
max
100
max
400
min
10 to 30
0.5
max
1.3
max
10
typ
165
typ
(Ta=25°C)
Unit
µ
A
µ
A
V
V
MHz
pF
20.0min
19.9
±0.3
4.0
a
b
ø3.2
±0.1
4.0max
V
2
3
1.05
+0.2
-0.1
0.65
+0.2
-0.1
1.4
s
Typical Switching Characteristics (Common Emitter)
V
CC
(V)
200
R
L
(Ω)
20
I
C
(A)
10
V
BB1
(V)
10
V
BB2
(V)
–5
I
B1
(A)
1
I
B2
(A)
–2
t
on
(
µ
s)
1
max
t
stg
(
µ
s)
3
max
t
f
(
µ
s)
0.5
max
5.45
±0.1
B
C
E
5.45
±0.1
Weight : Approx 6.0g
a. Part No.
b. Lot No.
I
C
– V
CE
Characteristics
(Typical)
18
16
V
CE
(sat),V
BE
(sat) – I
C
Temperature Characteristics
(Typical)
C o l l e c t or - Em i t t e r Sa t u r at i on V ol t ag e V
CE (s at)
( V )
B a s e - E m i t t e r Sa t u r a t i o n V o lt a ge V
BE (sat)
( V )
( I
C
/ I
B
= 5)
1.4
I
C
– V
BE
Temperature Characteristics
(Typical)
18
16
( V
CE
=4 V )
1.6A
1. 2A
C ol l e c t o r C ur r en t I
C
( A)
80 0m A
1
–55˚C (Case
Temp)
C o l l ec to r C u r r e n t I
C
( A )
V
B E
( s at )
12
600m A
400 mA
12
mp
25˚C (Ca
se Temp
)
)
mp)
–55˚
eT
em
p)
25
˚C
I
B
=100mA
12
5˚
C
(C
4
4
V
C E
( s at )
0
0 . 0 2 0 . 0 5 0 .1
0 .5
1
5
–5
5˚
C
0
0
1
2
3
4
1 0 18
0
0
0 .2
0. 4
0.6
25˚C
125
0.8
C (C
as
˚C
200mA
ase
(Ca
1
ase T
25˚C (C
(Cas
e Te
se
emp)
Tem
Te
8
8
p)
1. 0
1. 2
C o l l ect o r - Em i t t er V ol ta ge V
C E
(V )
Co l l ec to r C ur r en t I
C
( A)
Ba s e- E m i t t or V o l t a ge V
B E
( V )
(V
C E
= 4 V )
50
10
Transient Thermal Resistance
θ
j-a
(˚ C/ W )
h
FE
– I
C
Characteristics
(Typical)
S wi t c hi n g T i m e
t
on•
t
st g•
t
f
(
µ
s )
t
o n
•t
s tg
•t
f
– I
C
Characteristics
(Typical)
θ
j - a
– t Characteristics
2
125˚C
D C C u r r e n t Gai n h
F E
5
V
CC
2 0 0 V
I
C
: I
B1
:– I
B 2
= 1 0: 1: 2
t
s tg
25˚C
1
–55˚C
1
0.5
t
on
0.5
10
t
f
0.1
0.2
0.5
1
5
10
18
5
0.02
0. 05
0. 1
0.5
1
5
10 18
0.1
1
10
Time t(ms)
100
1 0 00
Co l l ect o r C u rren t I
C
(A )
C o ll e ct o r Cu r r e nt I
C
( A)
Safe Operating Area
(Single Pulse)
50
10
ms
Reverse Bias Safe Operating Area
50
13 0
Pc – Ta Derating
1m
10
s
0
µ
s
10
C olle c to r C u r r e n t I
C
( A )
5
DC
C oll ec t o r Cu rr e n t I
C
( A )
10
5
M ax im um P o w e r Di s s i p a t i o n P
C
( W )
10 0
W
ith
In
fin
ite
he
at
1
0.5
Without Heatsink
Natural Cooling
0.1
0.05
0.03
5
10
50
10 0
500
1
0.5
Without Heatsink
Natural Cooling
L=3mH
I
B2
=–0.5A
Duty:less than 1%
si
nk
50
0.1
0 .0 5
0 .0 3
5
10
50
10 0
5 00
3. 5
0
W i t ho u t He a t s i n k
0
25
50
75
100
1 25
1 50
Co l l ec t or - Emi t t er V ol ta ge V
C E
(V)
C ol l ec t or - Em i tt e r Vol t ag e V
C E
( V )
A m bi e nt T e m p e r a t ur e T a ( ˚ C )
93
SANKEN [ SANKEN ELECTRIC ]
