2SC4138
Silicon NPN Triple Diffused Planar Transistor
(High Voltage and High Speed Switchihg Transistor)
s
Absolute maximum ratings
(Ta=25°C)
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
Tj
T
stg
Ratings
500
400
10
10(
Pulse
20)
4
80(Tc=25°C)
150
–55 to +150
Unit
V
V
V
A
A
W
°C
°C
Application :
Switching Regulator and General Purpose
External Dimensions
MT-100(TO3P)
5.0
±0.2
15.6
±0.4
9.6
2.0
1.8
4.8
±0.2
2.0
±0.1
s
Electrical Characteristics
Symbol
I
CBO
I
EBO
V
(BR)CEO
h
FE
V
CE
(sat)
V
BE
(sat)
f
T
C
OB
Conditions
V
CB
=500V
V
EB
=10V
I
C
=25mA
V
CE
=4V, I
C
=6A
I
C
=6A, I
B
=1.2A
I
C
=6A, I
B
=1.2A
V
CE
=12V, I
E
=–0.7A
V
CB
=10V, f=1MHz
100
max
100
max
400
min
(Ta=25°C)
Ratings
Unit
µ
A
µ
A
19.9
±0.3
4.0
V
V
MHz
pF
10 to 30
0.5
max
1.3
max
10
typ
85
typ
V
a
b
ø3.2
±0.1
20.0min
4.0max
2
3
1.05
+0.2
-0.1
0.65
+0.2
-0.1
1.4
s
Typical Switching Characteristics (Common Emitter)
V
CC
(V)
200
R
L
(Ω)
33.3
I
C
(A)
6
V
BB1
(V)
10
V
BB2
(V)
–5
I
B1
(A)
0.6
I
B2
(A)
–1.2
t
on
(
µ
s)
1
max
t
stg
(
µ
s)
3
max
t
f
(
µ
s)
0.5
max
5.45
±0.1
B
C
E
5.45
±0.1
Weight : Approx 2.0g
a. Part No.
b. Lot No.
I
C
– V
CE
Characteristics
(Typical)
10
A
1.2
1A
V
CE
(sat),V
BE
(sat) – I
C
Temperature Characteristics
(Typical)
C o l l e c t o r - E m i t te r S at u r a t i o n Vo lt a g e V
C E(sa t)
(V )
B as e- Em i t t er S a t ur a t i o n Vo l ta g e V
B E(s at)
( V)
1.4
( I
C
/ I
B
= 5)
I
C
– V
B E
Temperature Characteristics
(Typical)
10
( V
C E
= 4V )
8
C ol l e c t o r C ur r en t I
C
( A)
60 0m A
8
1
C o l l ec to r C u r r e n t I
C
( A )
6
400mA
6
(Ca
se T
emp
)
ase T
emp)
–55˚
C (C
mp
˚C
(Ca
se
)
V
BE
( s at )
4
200 mA
4
2
2
V
C E
( sa t )
0
0.02
0.05
0.1
0. 5
1
5
10
0
0
0.2
0.4
0 .6
0.8
1.0
1.2
0
0
1
2
3
4
Co l l ec t or - Emi t te r V ol ta ge V
C E
(V )
Co l le c to r Cu r r en t I
C
( A)
B a s e - Em i t t o r Vo l t a g e V
B E
( V)
(V
C E
=4 V)
100
S wi t c hi n g T i m e
t
on•
t
st g•
t
f
(
µ
s )
D C C u r r e n t Gai n h
F E
10
5
V
CC
2 0 0 V
I
C
: I
B1
: – I
B 2
= 10 :1 : 2
1
0.5
t
f
0.1
0.1
0 .5
1
5
10
t
on
t
s tg
Transient Thermal Resistance
θ
j -a
( ˚ C / W )
h
FE
– I
C
Characteristics
(Typical)
t
o n
•t
s t g
•t
f
– I
C
Characteristics
(Typical)
θ
j- a
– t Characteristics
3
50
125˚C
25˚C
–55˚C
1
10
0. 5
5
0.02
0.05
0. 1
0 .5
1
5
10
0. 3
1
10
Time t(ms)
25˚C
125
I
B
=100 mA
Te
100
1000
C ol l e ct or C ur ren t I
C
(A )
C o ll e ct o r C u r r e nt I
C
( A)
Safe Operating Area
(Single Pulse)
30
1m
Reverse Bias Safe Operating Area
30
80
P c – Ta Derating
10
s
0
µ
10
Co lle ct o r Cu r re nt I
C
( A )
Co lle cto r Cu r r e nt I
C
( A )
5
10
5
M ax im um P o w e r Di s s i p a t i o n P
C
( W )
s
60
W
ith
In
fin
ite
he
40
at
si
nk
1
0.5
1
0 .5
Without Heatsink
Natural Cooling
L=3mH
–I
B2
=1A
Duty:less than 1%
Without Heatsink
Natural Cooling
20
0.1
5
10
50
10 0
500
Co l l ec t or - Emi t t er Vo l ta ge V
C E
(V)
0 .1
5
10
50
10 0
50 0
3. 5
0
W i t h o ut H e a ts i n k
0
25
50
75
100
1 25
1 50
Col l ec t or - Em i tt e r Vol t ag e V
C E
( V)
Am b i e n t T e m pe r a t u r e T a( ˚ C )
91
SANKEN [ SANKEN ELECTRIC ]
