2SC4130
Silicon NPN Epitaxial Planar Transistor
(High Voltage and High Speed Switchihg Transistor)
s
Absolute maximum ratings
(Ta=25°C)
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
Tj
T
stg
2SC4130
500
400
10
7(
Pulse
14)
2
30(Tc=25°C)
150
–55 to +150
Unit
V
V
V
A
A
W
°C
°C
Application :
Switching Regulator and General Purpose
(Ta=25°C)
s
Electrical Characteristics
Symbol
I
CBO
I
EBO
V
(BR)CEO
h
FE
V
CE
(sat)
V
BE
(sat)
f
T
C
OB
Conditions
V
CB
=500V
V
EB
=10V
I
C
=25mA
V
CE
=4V, I
C
=3A
I
C
=3A, I
B
=0.6A
I
C
=3A, I
B
=0.6A
V
CE
=12V, I
E
=–0.5A
V
CB
=10V, f=1MHz
External Dimensions
FM20(TO220F)
4.0
±0.2
10.1
±0.2
4.2
±0.2
2.8 c0.5
2SC4130
100
max
100
max
400
min
10 to 30
0.5
max
1.3
max
15
typ
50
typ
Unit
µ
A
V
V
V
MHz
pF
13.0min
16.9
±0.3
8.4
±0.2
µ
A
1.35
±0.15
1.35
±0.15
0.85
+0.2
-0.1
0.45
+0.2
-0.1
2.54
2.2
±0.2
2.4
±0.2
s
Typical Switching Characteristics (Common Emitter)
V
CC
(V)
200
R
L
(Ω)
67
I
C
(A)
3
V
BB1
(V)
10
V
BB2
(V)
–5
I
B1
(A)
0.3
I
B2
(A)
–0.6
t
on
(
µ
s)
1
max
t
stg
(
µ
s)
2.2
max
t
f
(
µ
s)
0.5
max
2.54
3.9
B C E
I
C
– V
CE
Characteristics
(Typical)
7
V
CE
(sat),V
BE
(sat) – I
C
Temperature Characteristics
(Typical)
( I
C
/ I
B
= 5)
Co l l e c t o r - Em i t t e r Sa t u r a t i o n V o l t a ge V
CE(s at)
( V )
B a s e - Em i t t e r Sa t u r a ti o n V ol t ag e V
B E(sa t)
(V )
I
C
– V
B E
Temperature Characteristics
(Typical)
7
( V
CE
= 4V )
I
B
=1
6
40
0m
1000mA
A
600mA
400m A
2
C ol l e c t o r C ur r e nt I
C
( A )
6
C ol l e c t o r C ur r en t I
C
( A)
4
4
p)
emp
)
–55˚
1
em
50mA
5˚C
p)
˚C
V
C E
( s a t)
0
0.02
0.05
0. 1
0. 5
(C
125˚C
as
e
T
–5
5˚
C
0
0
1
2
3
4
1
5 7
0
0
0. 2
0.4
0.6
25˚
25
12
C (C
0 .8
C (C
2
2
(Ca
ase
100 mA
–55˚C (Case Temp)
mp)
25˚C (Case Te
emp)
eT
125˚C (Cas
se
T
ase
T
Tem
V
B E
( sa t )
em
p)
20 0m A
±0.2
0.8
±0.2
a
b
ø3.3
±0.2
Weight : Approx 2.0g
a. Type No.
b. Lot No.
1. 0
1.2
Col le ct o r -Em i t t er V ol tag e V
C E
(V)
C o ll e ct o r Cu r r e nt I
C
( A)
B a s e - Em i t t o r Vo l t a g e V
B E
( V )
(V
C E
= 4 V )
50
DC C ur r e nt Ga i n h
FE
Sw i t c hi n g T i m e
t
on•
t
stg•
t
f
(
µ
s )
1 25 ˚ C
25 ˚ C
– 55 ˚C
5
Transient Thermal Resistance
θ
j -a
( ˚C /W )
h
FE
– I
C
Characteristics
(Typical)
t
o n
•t
s t g
•t
f
– I
C
Characteristics
(Typical)
θ
j - a
– t Characteristics
4
V
CC
2 0 0 V
I
C
:I
B 1
: – I
B2
= 1 0: 1 :2
1
0 .5
t
on
t
f
0 .1
0.2
0.5
1
t
s tg
10
1
5
0 .5
0 .3
2
0.02
0.05
0. 1
0 .5
1
5
7
5
7
1
10
Time t(ms)
10 0
1000
Co l l ect o r Curr en t I
C
( A)
Co l le c to r Cu r r en t I
C
( A)
Safe Operating Area
(Single Pulse)
20
10
5
Col lec tor Cu rr e n t I
C
(A )
DC
10
1m
s
10
0
µ
Reverse Bias Safe Operating Area
20
10
5
Co lle cto r C u r re nt I
C
( A )
M ax im u m P o we r Di s s i p a t i o n P
C
( W )
30
Pc – T a Derating
s
m
s
W
ith
20
In
fin
1
0.5
1
0 .5
ite
he
at
si
nk
0.1
0.05
Without Heatsink
Natural Cooling
0 .1
0.05
Without Heatsink
Natural Cooling
L=3mH
I
B2
=–0.5A
Duty:less than 1%
10
W i t h o u t H e a ts i n k
2
0.01
2
5
10
50
10 0
500
0.01
2
5
10
50
1 00
5 00
C o ll e ct o r - Em i t te r Vo lt a ge V
C E
( V)
0
0
25
50
75
100
1 25
150
C oll e ct or - Em it t er Vo l t ag e V
C E
(V )
Am b i e n t T e m pe r a t u r e T a( ˚ C)
88
SANKEN [ SANKEN ELECTRIC ]
