High h
FE
L
OW
V
CE
(sat)
Silicon NPN Epitaxial Planar Transistor
s
Absolute maximum ratings
(Ta=25°C)
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
Tj
T
stg
Ratings
2SC3852 2SC3852A
80
60
6
3
1
25(Tc=25°C)
150
–55 to +150
100
80
Unit
V
V
V
A
A
W
°C
°C
I
EBO
V
(BR)CEO
h
FE
V
CE
(sat)
f
T
C
OB
2SC3852/3852A
Application :
Driver for Solenoid and Motor, Series Regulator and General Purpose
(Ta=25°C)
Ratings
2SC3852 2SC3852A
10
max
80
100
max
60
min
500
min
13.0min
s
Electrical Characteristics
Symbol
I
CBO
V
CB
=
V
EB
=6V
I
C
=25mA
V
CE
=4V, I
C
=0.5A
I
C
=2A, I
B
=50mA
V
CE
=12V, I
E
=–0.2A
V
CB
=10V, f=1MHz
Conditions
External Dimensions
FM20(TO220F)
4.0
±0.2
10.1
±0.2
4.2
±0.2
2.8 c0.5
Unit
µ
A
µ
A
16.9
±0.3
100
80
min
V
V
V
MHz
pF
8.4
±0.2
0.5
max
15
typ
50
typ
1.35
±0.15
1.35
±0.15
0.85
+0.2
-0.1
0.45
+0.2
-0.1
2.54
2.2
±0.2
2.4
±0.2
2.54
s
Typical Switching Characteristics (Common Emitter)
V
CC
(V)
20
R
L
(Ω)
20
I
C
(A)
1.0
V
BB1
(V)
10
V
BB2
(V)
–5
I
B1
(mA)
15
I
B2
(mA)
–30
t
on
(
µ
s)
0.8typ
t
stg
(
µ
s)
3.0typ
t
f
(
µ
s)
1.2typ
3.9
B C E
I
C
– V
CE
Characteristics
(Typical)
3
I
B
=1
2m
V
CE
( sat ) – I
B
Characteristics
(Typical)
C ol l e c t o r - E m i tt e r Sa t u r a t i o n V o lt a ge V
C E(sa t)
( V )
1 .0
I
C
– V
B E
Temperature Characteristics
(Typical)
( V
CE
=4 V )
3
A
8m A
C o l l ec t or C u r r e n t I
C
( A )
5mA
2
3mA
2mA
1 .0
C o l l ec t or C u r r e n t I
C
( A)
2
p)
Tem
Cas
e
±0.2
0.8
±0.2
a
b
ø3.3
±0.2
Weight : Approx 2.0g
a. Part No.
b. Lot No.
e Te
25˚C
(Cas
0.5mA
2A
I
C
=1A
0
0.001
0
0
0
1
2
3
4
5
6
0.005 0.01
0.05
0.1
0.5
1
0
–30˚C
3A
125
1mA
˚C (
1
0 .5
1
(Case
mp)
Temp
)
0.5
Ba s e - E m i tt o r Vo l ta g e V
B E
( V )
1.0 1.1
Co l l ect o r - Em i t t er Vo l t ag e V
C E
( V)
Bas e C ur r e nt I
B
( A)
(V
C E
= 4 V )
2000
D C C u r r e n t Gai n h
F E
2000
D C C u r r e n t Gai n h
F E
( V
C E
= 4 V)
Transient Thermal Resistance
θ
j-a
( ˚ C /W )
h
FE
– I
C
Characteristics
(Typical)
h
F E
– I
C
Temperature Characteristics
(Typical)
θ
j - a
– t Characteristics
5
125˚C
2 5 ˚C
1000
Typ
1000
500
500
–30˚C
1
V
CB
= 10 V
I
E
=– 2 A
1
10
T i m e t( m s )
100
1 00 0
100
0.01
0.1
0.5
1
3
100
0.01
0. 1
0.5
1
3
0.5
Co l l ect o r Curr en t I
C
(A )
C ol l e ct or C u r r e nt I
C
( A)
f
T
– I
E
Characteristics
(Typical)
30
( V
C E
=1 2 V)
10
Safe Operating Area
(Single Pulse)
30
1m
Pc – Ta Derating
C ut- off F r e q u e n c y f
T
( M H
Z
)
10
m
0m
s
C oll ec to r Cu rr en t I
C
(A )
s
M ax im um P o w e r Di s s i p a t i o n P
C
( W )
5
10
s
W
20
DC
20
ith
In
Typ
fin
1
0.5
ite
he
at
si
nk
10
10
Without Heatsink
Natural Cooling
0.1
W i t h o ut H e at s i n k
3
5
50
10 0
0
0
–0.005 –0.01
0.05
–0.05 –0.1
– 0. 5
–1
–2
10
Em i t t er C u rre nt I
E
(A )
C ol l ec t or - Em i t te r Vol t ag e V
C E
( V)
0
50
100
15 0
A m b i en t T e m p e r a t ur e T a ( ˚ C )
78
SANKEN [ SANKEN ELECTRIC ]
