2SC3680
Silicon NPN Triple Diffused Planar Transistor
(High Voltage Switching Transistor)
s
Absolute maximum ratings
(Ta=25°C)
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
Tj
T
stg
2SC3680
900
800
7
7(
Pulse
14)
3.5
120(Tc=25°C)
150
–55 to +150
Unit
V
V
V
A
A
W
°C
°C
Application :
Switching Regulator and General Purpose
(Ta=25°C)
s
Electrical Characteristics
Symbol
I
CBO
I
EBO
V
(BR)CEO
h
FE
V
CE
(sat)
V
BE
(sat)
f
T
C
OB
Conditions
V
CB
=800V
V
EB
=7V
I
C
=10mA
V
CE
=4V, I
C
=3A
I
C
=3A, I
B
=0.6A
I
C
=3A, I
B
=0.6A
V
CE
=12V, I
E
=–2A
V
CB
=10V, f=1MHz
100
max
100
max
800
min
10 to 30
0.5
max
1.2
max
6
typ
105
typ
External Dimensions
MT-100(TO3P)
5.0
±0.2
15.6
±0.4
9.6
2.0
1.8
4.8
±0.2
2.0
±0.1
2SC3680
Unit
µ
A
µ
A
19.9
±0.3
4.0
V
V
MHz
pF
a
b
ø3.2
±0.1
20.0min
4.0max
V
2
3
1.05
+0.2
-0.1
0.65
+0.2
-0.1
1.4
s
Typical Switching Characteristics (Common Emitter)
V
CC
(V)
250
R
L
(Ω)
83
I
C
(A)
3
V
BB1
(V)
10
V
BB2
(V)
–5
I
B1
(A)
0.45
I
B2
(A)
–1.5
t
on
(
µ
s)
1
max
t
stg
(
µ
s)
5
max
t
f
(
µ
s)
1
max
5.45
±0.1
B
C
E
5.45
±0.1
Weight : Approx 6.0g
a. Type No.
b. Lot No.
I
C
– V
CE
Characteristics
(Typical)
7
V
CE
(sat),V
BE
(sat) – I
C
Temperature Characteristics
(Typical)
C o l l ec to r - Em i t t er S a t ur a t i o n Vo l ta g e V
CE( sa t)
(V )
Ba s e - E m i t t er S a tu r a t i o n Vo l t a g e V
BE (s a t)
( V )
( I
C
/ I
B
= 5 )
I
C
– V
B E
Temperature Characteristics
(Typical)
7
( V
C E
=4 V )
1A
700 mA
6
500m A
1
–55˚C (Cas
25˚C (C
V
B E
( s at )
e Temp)
p)
6
C ol l e c t o r C ur r e nt I
C
( A )
C ol l e c t o r C ur r en t I
C
( A)
p)
Tem
4
300 mA
ase Tem
4
emp)
(Case
T
emp
(C
12
5˚
V
C E
( s a t)
0
0 .0 2
0 .0 5
0.1
0. 5
1
–5
0
25
C
˚C
as
2
2
5˚C
0
1
2
3
4
5 7
0
0
0.2
0 .4
0 .6
0.8
–55˚C (C
eT
25˚C
I
B
=100mA
125˚
C (C
ase
125˚C
(Case
ase Tem
200mA
Temp
)
)
p)
1.0
1. 2
Co l le ct o r -Em i t t er V ol tag e V
C E
(V)
C ol l ec t or C ur r en t I
C
( A)
Ba s e - E m i t to r V o l t a ge V
BE
( V )
(V
C E
= 4 V )
50
DC Cu r r e n t Ga i n h
FE
10
Transient Thermal Resistance
θ
j-a
( ˚ C / W )
h
F E
– I
C
Characteristics
(Typical)
5˚
Sw i t c hi n g T i m e
t
on•
t
stg•
t
f
(
µ
s )
t
o n
•t
s tg
•t
f
– I
C
Characteristics
(Typical)
θ
j - a
– t Characteristics
2
12
25˚C
C
5
V
CC
2 5 0 V
I
C
:I
B 1
: I
B2
= 2 : 0. 3 :– 1C o ns t .
t
s tg
1
–55 ˚C
0.5
1
0 .5
t
on
0 .2
0.1
t
f
10
5
0.02
0.05
0.1
0 .5
1
5
7
0.5
1
5
7
0.1
1
10
Time t(ms)
100
1 0 00
Co l le ct o r Curre nt I
C
(A )
C ol l ec t or C ur r en t I
C
( A)
Safe Operating Area
(Single Pulse)
20
10
5
Co lle cto r Cu r re n t I
C
( A )
10
Reverse Bias Safe Operating Area
20
120
Pc – Ta Derating
s
M ax im u m P o we r Di s s i p a t i o n P
C
( W )
m
1m
10
s
0
µ
s
10
5
Co lle cto r C u r re nt I
C
( A )
100
W
ith
In
fin
1
0.5
1
0 .5
ite
he
at
si
nk
50
0.1
0.05
Without Heatsink
Natural Cooling
0 .1
0.05
Without Heatsink
Natural Cooling
L=3mH
I
B2
=–1.0A
Duty:less than 1%
0.01
2
5
10
50
10 0
50 0
1000
0.01
50
1 00
50 0
10 00
3.5
0
W i t ho u t He a t s i nk
0
25
50
75
100
12 5
15 0
Co l l ec t or - Emi t t e r V ol ta ge V
C E
(V )
C o ll e ct o r - Em i t te r Vo lt a ge V
C E
( V)
A m b i e n t T e m p e r a tu r e T a ( ˚ C )
69
SANKEN [ SANKEN ELECTRIC ]
