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2SC3284Y 参数 Datasheet PDF下载

2SC3284Y图片预览
型号: 2SC3284Y
PDF下载: 下载PDF文件 查看货源
内容描述: [Power Bipolar Transistor, 14A I(C), 150V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin, MT100, TO-3P, 3 PIN]
分类和应用:
文件页数/大小: 1 页 / 28 K
品牌: SANKEN [ SANKEN ELECTRIC ]
   
LAPT
s
Absolute maximum ratings
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
Tj
T
stg
Ratings
150
150
5
14
3
125(Tc=25°C)
150
–55 to +150
2SC3284
Application :
Audio and General Purpose
(Ta=25°C)
Ratings
100
max
100
max
150
min
50
min
2.0
max
60
typ
200
typ
V
pF
20.0min
4.0max
Silicon NPN Epitaxial Planar Transistor
(Complement to type 2SA1303)
(Ta=25°C)
Unit
V
V
V
A
A
W
°C
°C
s
Electrical Characteristics
Symbol
I
CBO
I
EBO
V
(BR)CEO
h
FE
V
CE
(sat)
f
T
C
OB
Conditions
V
CB
=150V
V
EB
=5V
I
C
=25mA
V
CE
=4V, I
C
=5A
I
C
=5A, I
B
=0.5A
V
CE
=12V, I
E
=–2A
V
CB
=10V, f=1MHz
External Dimensions
MT-100(TO3P)
5.0
±0.2
15.6
±0.4
9.6
2.0
1.8
4.8
±0.2
2.0
±0.1
Unit
µ
A
µ
A
19.9
±0.3
4.0
V
a
b
ø3.2
±0.1
MHz
2
3
1.05
+0.2
-0.1
0.65
+0.2
-0.1
1.4
∗h
FE
Rank O(50 to 100), P(70 to 140), Y(90 to 180)
s
Typical Switching Characteristics (Common Emitter)
V
CC
(V)
60
R
L
(Ω)
12
I
C
(A)
5
V
BB1
(V)
10
V
BB2
(V)
–5
I
B1
(A)
0.5
I
B2
(A)
–0.5
t
on
(
µ
s)
0.2typ
t
stg
(
µ
s)
1.5typ
t
f
(
µ
s)
0.35typ
5.45
±0.1
B
C
E
5.45
±0.1
Weight : Approx 6.0g
a. Part No.
b. Lot No.
I
C
– V
C E
Characteristics
(Typical)
0m
4
A
00m
300
mA
V
C E
( sat ) – I
B
Characteristics
(Typical)
C o l l ec t or - Em i t t e r Sa t u r at i on V ol t ag e V
CE (s at)
( V )
3
I
C
– V
B E
Temperature Characteristics
(Typical)
14
( V
C E
=4 V )
14
A
0m
60
mA
0
50
12
75
A
200m
C o l l e c to r C u r r e n t I
C
( A)
A
C o l l e c t or C u r r e n t I
C
( A )
150mA
10
2
8
10 0m A
em
as
5A
0
0
0
0
1
2
3
4
0
0. 2
0 .4
0.6
0.8
1. 0
0
–30
˚C
25
˚C
I
B
=20mA
12
5˚C
I
C
= 1 0A
1
Ba s e- Em i t t or V o l t a ge V
BE
( V )
(Ca
(C
se
4
eT
1
Tem
50m A
5
p)
p)
2
Co l le ct o r -Em i t t er Vo l t ag e V
C E
(V)
Bas e C ur r en t I
B
( A)
(V
C E
= 4 V )
200
DC Cu r r e nt Ga i n h
FE
DC C ur re nt Ga i n h
FE
200
12 5 ˚ C
100
100
( V
C E
= 4V)
Transient Thermal Resistance
θ
j-a
(˚ C/ W )
h
FE
– I
C
Characteristics
(Typical)
h
F E
– I
C
Temperature Characteristics
(Typical)
θ
j - a
– t Characteristics
3
Typ
2 5˚ C
–3 0˚ C
1
0.5
50
50
20
0.02
0. 1
0.5
1
5
10 14
20
0.02
0. 1
0.5
1
5
1 0 14
0.1
1
10
100
Time t(ms)
10 0 0 2 00 0
Co l l ect o r Cu rre nt I
C
( A)
C ol l ec t or C ur r en t I
C
( A)
f
T
– I
E
Characteristics
(Typical)
( V
CE
= 1 2 V )
80
40
Safe Operating Area
(Single Pulse)
1 30
1m
10
Pc – Ta Derating
s
Cu t- off F r e q u e nc y f
T
( M H
Z
)
Typ
60
Co llec t o r C u r r e n t I
C
( A )
10
5
10
s
0m
M a xim u m P o we r D i s s i p a t i o n P
C
( W )
m
D
s
1 00
W
ith
C
In
fin
ite
he
40
at
si
nk
50
1
0.5
Without Heatsink
Natural Cooling
20
0
–0.02
0.2
–0 . 1
–1
–10
3
10
100
20 0
Em i t t er C u rre nt I
E
(A )
Col l ec t or - Em i t te r Vol t ag e V
C E
( V)
3. 5
0
W i t h o u t H e a ts i n k
0
25
50
75
100
125
150
Am bi e nt T e m p e r a t u r e T a ( ˚ C )
66