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2SB1648_07 参数 Datasheet PDF下载

2SB1648_07图片预览
型号: 2SB1648_07
PDF下载: 下载PDF文件 查看货源
内容描述: PNP硅外延平面晶体管 [Silicon PNP Epitaxial Planar Transistor]
分类和应用: 晶体晶体管
文件页数/大小: 1 页 / 30 K
品牌: SANKEN [ SANKEN ELECTRIC ]
   
( 7 0Ω ) E
Darlington
s
Absolute maximum ratings
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
Tj
T
stg
Ratings
–150
–150
–5
–17
–1
200(Tc=25°C)
150
–55 to +150
(Ta=25°C)
Unit
V
V
V
A
A
W
°C
°C
2SB1648
s
Electrical Characteristics
Symbol
I
CBO
I
EBO
V
(BR)CEO
h
FE
V
CE
(sat)
V
BE
(sat)
f
T
C
OB
Conditions
V
CB
=–150V
V
EB
=–5V
I
C
=–30mA
V
CE
=–4V, I
C
=–10A
I
C
=–10A, I
B
=–10mA
I
C
=–10A, I
B
=–10mA
V
CE
=–12V, I
E
=2A
V
CB
=–10V, f=1MHz
Ratings
–100
max
–100
max
–150
min
5000
min
–2.5
max
–3.0
max
45
typ
320
typ
V
V
20.0min
4.0max
B
Equivalent circuit
C
Silicon PNP Epitaxial Planar Transistor
(Complement to type 2SD2561)
Application :
Audio, Series Regulator and General Purpose
(Ta=25°C)
Unit
External Dimensions
MT-200
36.4
±0.3
24.4
±0.2
2-ø3.2
±0.1
9
7
21.4
±0.3
2.1
6.0
±0.2
µ
A
µ
A
V
a
b
MHz
pF
2
3
1.05
+0.2
-0.1
5.45
±0.1
B
C
E
5.45
±0.1
0.65
+0.2
-0.1
3.0
+0.3
-0.1
∗h
FE
Rank O(5000 to 12000), P(6500 to 20000), Y(15000 to 30000)
s
Typical Switching Characteristics (Common Emitter)
V
CC
(V)
–40
R
L
(Ω)
4
I
C
(A)
–10
V
BB1
(V)
–10
V
BB2
(V)
5
I
B1
(mA)
–10
I
B2
(mA)
10
t
on
(
µ
s)
0.7typ
t
stg
(
µ
s)
1.6typ
t
f
(
µ
s)
1.1typ
Weight : Approx 18.4g
a. Part No.
b. Lot No.
I
C
– V
CE
Characteristics
(Typical)
0m
A
–1
V
CE
( sat ) – I
B
Characteristics
(Typical)
C ol l e c t o r - E m i tt e r S at u r a t i o n V o lt a g e V
C E(s at)
( V)
–3
I
C
– V
B E
Temperature Characteristics
(Typical)
17
15
C o l l e c to r C u r r e n t I
C
( A)
( V
C E
= –4 V )
–17
mA
–3mA
–2mA
–15
–50
–1 .5 m A
C ol l e c t o r C ur r en t I
C
( A)
–1. 0m A
–0. 8m A
–10
–0.5m A
5˚C
emp
)
se T
–30
˚
12
0
0
–2
–4
–6
0
–0.2
–0.5 –1
–5
–10
–50 –100 –200
0
0
–1
25˚
C
C (C
–5
5
(Ca
–1
ase
I
B
=–0.3mA
I
C
= –5 A
–2
Tem
p)
I
C
=–1 0A
(Ca
se
I
C
=–15 A
10
Te
–2
mp
)
–3
Co l le ct o r -Em i t t er Vo l t ag e V
C E
(V)
Ba s e Cu r r en t I
B
( m A)
Ba s e - E m i t to r V ol t ag e V
B E
( V )
50,000
D C C u r r e n t Gai n h
F E
( V
CE
= – 4 V )
50000
D C C u r r e n t Gai n h
F E
1 2 5˚ C
2 5˚ C
10000
5000
–3 0˚ C
( V
C E
= –4 V)
Transient Thermal Resistance
θ
j -a
( ˚ C / W )
h
FE
– I
C
Characteristics
(Typical)
h
F E
– I
C
Temperature Characteristics
(Typical)
θ
j - a
– t Characteristics
2
Typ
1
10,000
5,000
0 .5
1,000
–0.2
–0.5
–1
–5
–1 0
–17
1000
–0.2
– 0 .5
–1
–5
– 10
– 17
0 .1
1
10
1 00
Time t(ms)
1 0 0 0 2 00 0
C o ll e ct o r C ur ren t I
C
(A )
C ol l e ct or C u r r e nt I
C
( A)
f
T
– I
E
Characteristics
(Typical)
(V
C E
= –12 V)
60
Safe Operating Area
(Single Pulse)
–50
10
Pc – Ta Derating
200
Cu t-o ff F re q u e n c y f
T
(M H
Z
)
–10
40
C ol le c to r Cu rr e n t I
C
(A )
–5
0m
s
M ax im um P ow e r D i s s i p a t i o n P
C
( W )
10
DC
m
s
160
W
ith
In
fin
120
ite
he
at
si
nk
–1
–0.5
80
20
Without Heatsink
Natural Cooling
40
Without Heatsink
0
25
50
75
10 0
125
150
–0.1
0
0.02
0.05 0. 1
0. 5
1
5
10
–0.05
–3
–5
–10
– 50
– 1 00
–2 00
5
0
Em i t t er C urre nt I
E
(A )
Col l ec t or - Em i tt e r Vol t ag e V
C E
( V)
Am b i e n t T e m p er at u r e T a ( ˚ C )
53