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2SB1647_07 参数 Datasheet PDF下载

2SB1647_07图片预览
型号: 2SB1647_07
PDF下载: 下载PDF文件 查看货源
内容描述: PNP硅外延平面晶体管 [Silicon PNP Epitaxial Planar Transistor]
分类和应用: 晶体晶体管
文件页数/大小: 1 页 / 30 K
品牌: SANKEN [ SANKEN ELECTRIC ]
   
(7 0
) E
Darlington
s
Absolute maximum ratings
(Ta=25°C)
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
Tj
T
stg
Ratings
–150
–150
–5
–15
–1
130(Tc=25°C)
150
–55 to +150
Unit
V
V
V
A
A
W
°C
°C
2SB1647
s
Electrical Characteristics
Symbol
I
CBO
I
EBO
V
(BR)CEO
h
FE
V
CE
(sat)
V
BE
(sat)
f
T
C
OB
Conditions
V
CB
=–150V
V
EB
=–5V
I
C
=–30mA
V
CE
=–4V, I
C
=–10A
I
C
=–10A, I
B
=–10mA
I
C
=–10A, I
B
=–10mA
V
CE
=–12V, I
E
=2A
V
CB
=–10V, f=1MHz
Ratings
–100
max
–100
max
–150
min
5000
min
–2.5
max
–3.0
max
45
typ
320
typ
V
V
MHz
pF
20.0min
4.0max
2
3
B
Equivalent circuit
C
Silicon PNP Epitaxial Planar Transistor
(Complement to type 2SD2560)
Application :
Audio, Series Regulator and General Purpose
(Ta=25°C)
Unit
5.0
±0.2
2.0
1.8
External Dimensions
MT-100(TO3P)
15.6
±0.4
9.6
4.8
±0.2
2.0
±0.1
µ
A
µ
A
19.9
±0.3
V
4.0
a
b
ø3.2
±0.1
∗h
FE
Rank O(5000 to 12000), P(6500 to 20000), Y(15000 to 30000)
1.05
+0.2
-0.1
5.45
±0.1
B
C
E
5.45
±0.1
0.65
+0.2
-0.1
1.4
s
Typical Switching Characteristics (Common Emitter)
V
CC
(V)
–40
R
L
(Ω)
4
I
C
(A)
10
V
BB1
(V)
–10
V
BB2
(V)
5
I
B1
(mA)
–10
I
B2
(mA)
10
t
on
(
µ
s)
0.7typ
t
stg
(
µ
s)
1.6typ
t
f
(
µ
s)
1.1typ
Weight : Approx 6.0g
a. Part No.
b. Lot No.
I
C
– V
CE
Characteristics
(Typical)
–15
–2
m
A
–1.5mA
V
CE
( sat ) – I
B
Characteristics
(Typical)
C o l l ec t or - Em i t t e r Sa t ur at i on V ol t ag e V
C E(s at)
( V)
–3
I
C
– V
B E
Temperature Characteristics
(Typical)
–15
( V
CE
=– 4 V )
–50mA
–10mA
–3mA
–1 .0 m A
C o l l ec t or C u r r e n t I
C
( A)
–0. 8m A
Co l l e c t o r Cu r r e n t I
C
( A )
–10
–0 .5m A
–2
–10
p)
em
eT
I
C
=–15 A
emp
(Ca
se T
I
C
=–1 0A
I
C
= – 5A
)
(Ca
s
I
B
=–0.3m A
125
˚C
–5
–1
–5
25˚C
0
0
–2
–4
–6
0
–0.2
–0.5 –1
–5
–10
–50 –100 –200
0
0
–1
–30
˚C
(Ca
se T
emp
–2
)
–3
C o l le ct o r - Em i t t er V ol ta ge V
C E
( V)
Ba s e Cu r r en t I
B
( m A)
B a s e - E m i t t o r Vo l ta g e V
BE
( V )
50,000
DC C ur r e nt Ga i n h
F E
(V
C E
= – 4 V )
50000
DC C ur r e nt Ga i n h
F E
1 25 ˚ C
2 5˚ C
10000
5000
– 3 0˚ C
( V
C E
= – 4 V)
Transient Thermal Resistance
θ
j-a
( ˚ C / W )
h
FE
– I
C
Characteristics
(Typical)
h
F E
– I
C
Temperature Characteristics
(Typical)
θ
j - a
– t Characteristics
3
Typ
1
10,000
5,000
0.5
1,000
–0. 2
–0.5
–1
C ol l e ct or Cu rre nt I
C
(A)
–5
–10 –15
1000
–0.2
–0.5
–1
C ol l ec t or C ur r en t I
C
( A)
–5
– 10 –15
0.1
1
10
1 00
Time t(ms)
1 0 0 0 2 00 0
f
T
– I
E
Characteristics
(Typical)
( V
C E
=– 1 2 V )
60
Safe Operating Area
(Single Pulse)
–50
10
Pc – Ta Derating
1 30
10
Cu t-o ff F r e q u e n c y f
T
( M H
Z
)
–10
40
C oll ec tor Cu rr e n t I
C
( A )
–5
0m
m
s
DC
s
M ax im um P ow e r D i s s i p a t i o n P
C
( W )
1 00
W
ith
In
fin
ite
he
at
si
nk
–1
–0.5
Without Heatsink
Natural Cooling
50
20
–0.1
0
0.02
0.05 0 . 1
0.5
1
5
10
–0.05
–3
–5
–1 0
–5 0
–1 0 0
– 20 0
3. 5
0
0
W i t h o ut H e a ts i n k
25
50
75
1 00
125
150
Em i t t er C ur ren t I
E
(A)
C ol l ec t or - Em i t te r Vol t ag e V
C E
( V)
Am b i e nt T e m pe r a t u r e T a ( ˚ C)
52