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2SB1687Y 参数 Datasheet PDF下载

2SB1687Y图片预览
型号: 2SB1687Y
PDF下载: 下载PDF文件 查看货源
内容描述: [Power Bipolar Transistor, 6A I(C), 110V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3 Pin, FM100, TO-3P, 3 PIN]
分类和应用: 局域网开关晶体管
文件页数/大小: 1 页 / 24 K
品牌: SANKEN [ SANKEN ELECTRIC ]
   
( 7 0
Ω)
E
Darlington
s
Absolute maximum ratings
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
Tj
T
stg
Ratings
–110
–110
–5
–6
–1
60(Tc=25°C)
150
–55 to +150
(Ta=25°C)
Unit
V
V
V
A
A
W
°C
°C
2SB1687
s
Electrical Characteristics
Symbol
I
CBO
I
EBO
V
(BR)CEO
h
FE
V
CE
(sat)
V
BE
(sat)
f
T
C
OB
Conditions
V
CB
=–110V
V
EB
=–5V
I
C
=–30mA
V
CE
=–4V, I
C
=–5A
I
C
=–5A, I
B
=–5mA
I
C
=–5A, I
B
=–5mA
V
CE
=–12V, I
E
=0.5A
V
CB
=–10V, f=1MHz
Ratings
–100
max
–100
max
–110
min
5000
min
–2.5
max
–3.0
max
–100
typ
–110
typ
V
V
16.2
B
Equivalent circuit
C
Silicon PNP Epitaxial Planar Transistor
(Complement to type 2SD2643)
Application :
Audio, Series Regulator and General Purpose
(Ta=25°C)
Unit
External Dimensions
FM100(TO3P)
0.8
±0.2
15.6
±0.2
5.5
±0.2
3.45
±0.2
5.5
ø3.3
±0.2
1.6
µ
A
V
9.5
±0.2
µ
A
23.0
±0.3
a
b
MHz
pF
1.75
2.15
1.05
+0.2
-0.1
5.45
±0.1
1.5
4.4
5.45
±0.1
1.5
0.65
+0.2
-0.1
3.3
0.8
∗h
FE
Rank O(5000 to 12000), P(6500 to 20000), Y(15000 to 30000)
3.35
s
Typical Switching Characteristics (Common Emitter)
V
CC
(V)
–30
R
L
(Ω)
6
I
C
(A)
–5
V
BB1
(V)
–10
V
BB2
(V)
5
I
B1
(mA)
–5
I
B2
(mA)
5
t
on
(
µ
s)
1.1typ
t
stg
(
µ
s)
3.2typ
t
f
(
µ
s)
1.1typ
B
C
E
Weight : Approx 6.5g
a. Part No.
b. Lot No.
I
C
– V
CE
Characteristics
(Typical)
A
m
–1
V
CE
(sat) – I
B
Characteristics
(Typical)
C ol l e c t o r - E m i t te r S at u r a t i o n Vo lt a g e V
C E( sat)
(V )
–3
I
C
– V
B E
Temperature Characteristics
(Typical)
( V
C E
= –4 V )
–6
–6
A
–5m
–0
.5
m
A
–0
.4
mA
– 0 .3 m A
C o l l e c t o r C u r r e nt I
C
( A )
–0 .2 mA
–4
Co l l e c t o r C ur r en t I
C
( A)
–2
–5A
–4
p)
Tem
emp
)
se T
I
C
= –3 A
–1
(Ca
se
I
B
=–0 .1m A
125
˚C
–2
25˚C
0
0
–2
–4
–6
0
–0.1
–0.5 –1
–5 –10
–50 –100
0
0
–1
–30˚
C (C
–2
(Ca
ase
Tem
p)
–2
C ol l ect o r - Em i t t er V ol ta ge V
C E
(V )
Ba se Cu r r e nt I
B
( m A)
B a s e - Em i t t o r Vo l t a g e V
B E
( V )
( V
C E
=– 4 V)
50000
D C C ur re n t Gai n h
F E
D C C ur re n t Gai n h
F E
50000
( V
C E
= – 4 V)
1 2 5˚ C
Transient Thermal Resistance
θ
j- a
( ˚ C/ W )
h
FE
– I
C
Characteristics
(Typical)
h
F E
– I
C
Temperature Characteristics
(Typical)
θ
j - a
– t Characteristics
5
10000
5000
Typ
10000
5000
2 5˚ C
– 30 ˚ C
1000
500
1000
500
1
0. 5
1
10
1 00
T i m e t( m s )
1 0 0 0 2 0 00
100
–0.01
–0. 05 – 0. 1
–0 .5
–1
–5 –6
100
–0.01
– 0 . 05 –0 . 1
– 0. 5
–1
– 5 –6
C ol l ec t or Cur ren t I
C
(A )
Co l le c to r C ur r en t I
C
( A)
f
T
– I
E
Characteristics
(Typical)
(V
C E
=–1 2 V)
120
–20
–10
–5
C olle c tor C u r r e n t I
C
( A )
Safe Operating Area
(Single Pulse)
60
Pc – Ta Derating
Typ
100
Cu t-o ff F re q u e n c y f
T
( M H
Z
)
10
10
0m
s
m
s
M ax im um P ow e r D i s s i p a t i on P
C
( W )
80
DC
40
–1
– 0 .5
60
40
20
20
– 0 .1
Without Heatsink
Natural Cooling
W i t ho u t He a t s i nk
0
0.02
0.05
0. 1
0 .5
1
5 6
– 0 .0 5
–5
–10
– 50
– 10 0 –1 50
3. 5
0
0
25
50
75
100
1 25
15 0
Emi t t e r C urre nt I
E
(A)
Col l e ct or - Em i t te r Vol t ag e V
C E
( V)
A m bi e nt T e m p e r a t ur e T a ( ˚ C )
58
3.0
–3
W
ith
In
fin
ite
he
at
si
nk