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2SB1685P 参数 Datasheet PDF下载

2SB1685P图片预览
型号: 2SB1685P
PDF下载: 下载PDF文件 查看货源
内容描述: [Power Bipolar Transistor, 6A I(C), 110V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3 Pin, MT100, TO-3P, 3 PIN]
分类和应用: 局域网开关晶体管
文件页数/大小: 1 页 / 28 K
品牌: SANKEN [ SANKEN ELECTRIC ]
   
(7 0
) E
Darlington
s
Absolute maximum ratings
(Ta=25°C)
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
Tj
T
stg
Ratings
–110
–110
–5
–6
–1
60(Tc=25°C)
150
–55 to +150
Unit
V
V
V
A
A
W
°C
°C
2SB1685
s
Electrical Characteristics
Symbol
I
CBO
I
EBO
V
(BR)CEO
h
FE
V
CE
(sat)
V
BE
(sat)
f
T
C
OB
Conditions
V
CB
=–110V
V
EB
=–5V
I
C
=–30mA
V
CE
=–4V, I
C
=–5A
I
C
=–5A, I
B
=–5mA
I
C
=–5A, I
B
=–5mA
V
CE
=–12V, I
E
=0.5A
V
CB
=–10V, f=1MHz
Ratings
–100
max
–100
max
–110
min
5000
min
–2.5
max
–3.0
max
100
typ
110
typ
V
V
MHz
pF
20.0min
4.0max
3
B
Equivalent circuit
C
Silicon PNP Epitaxial Planar Transistor
(Complement to type 2SD2641)
Application :
Audio, Series Regulator and General Purpose
(Ta=25°C)
Unit
5.0
±0.2
1.8
External Dimensions
MT-100(TO3P)
15.6
±0.4
9.6
2.0
4.8
±0.2
2.0
±0.1
µ
A
µ
A
19.9
±0.3
V
4.0
a
b
ø3.2
±0.1
2
1.05
+0.2
-0.1
5.45
±0.1
B
C
E
5.45
±0.1
0.65
+0.2
-0.1
1.4
∗h
FE
Rank O(5000 to 12000), P(6500 to 20000), Y(15000 to 30000)
s
Typical Switching Characteristics (Common Emitter)
V
CC
(V)
–30
R
L
(Ω)
6
I
C
(A)
–5
V
BB1
(V)
–10
V
BB2
(V)
5
I
B1
(mA)
–5
I
B2
(mA)
5
t
on
(
µ
s)
1.1typ
t
stg
(
µ
s)
3.2typ
t
f
(
µ
s)
1.1typ
Weight : Approx 6.0g
a. Part No.
b. Lot No.
I
C
– V
CE
Characteristics
(Typical)
Co l l e c t o r - E m i t t e r Sa t u r a t i o n V o lt a ge V
C E(s at)
( V )
–6
A
–5m
m
5m
–1
–0.
A
.4m
–0
A
V
CE
( sat ) – I
B
Characteristics
(Typical)
–3
I
C
– V
B E
Temperature Characteristics
(Typical)
( V
CE
= – 4 V )
–6
A
– 0 .3 m A
C ol l e c t o r C ur r en t I
C
( A)
–0 .2 mA
–4
C o l l e c t or C u r r e n t I
C
( A )
–2
–5 A
–4
p)
Tem
se
(Ca
125
˚C
se T
25˚C
(Ca
I
B
=–0 .1m A
I
C
= –3 A
–1
–2
0
0
–2
–4
–6
0
–0.1
–0.5 –1
–5 –10
–50 –100
0
0
–1
–30˚
C (C
–2
ase
emp
)
Tem
p)
–2
–3
C olle ct o r - Em i t t er V ol ta ge V
C E
(V )
Bas e C ur r en t I
B
( m A)
Ba s e - E m i t t or V o l t a ge V
BE
( V)
(V
C E
= – 4 V )
50000
D C Cu rr en t Ga i n h
FE
D C Cu rr en t Ga i n h
FE
50000
( V
C E
= –4 V)
1 25 ˚ C
Transient Thermal Resistance
θ
j -a
( ˚ C/ W )
h
F E
– I
C
Characteristics
(Typical)
h
F E
– I
C
Temperature Characteristics
(Typical)
θ
j - a
– t Characteristics
5
10000
5000
Typ
10000
5000
25 ˚ C
–3 0 ˚ C
1000
500
1000
500
1
0.5
1
5
10
50
100
500 1000 2000
100
–0.01
–0.05 –0 . 1
–0 .5
–1
–5 –6
100
–0.01
– 0 .0 5 –0 .1
– 0. 5
–1
–5 –6
C ol l ec t or C ur re nt I
C
( A)
Co l l ec to r C ur r en t I
C
( A)
Time t(ms)
f
T
– I
E
Characteristics
(Typical)
(V
C E
= –1 2V )
120
–20
–10
–5
Co lle cto r C ur re nt I
C
( A )
Safe Operating Area
(Single Pulse)
60
Pc – Ta Derating
Typ
100
Cu t-o ff F re q u e n c y f
T
( M H
Z
)
10
m
Ma x imu m Po w e r D i s s i p a t i o n P
C
(W )
W
10
s
ith
80
DC
–1
– 0 .5
0m
s
40
In
fin
ite
he
60
at
si
nk
40
20
20
– 0 .1
Without Heatsink
Natural Cooling
Without Heatsink
0
0. 02
0.05
0. 1
0. 5
1
5 6
–0.05
–5
–10
– 50
–1 00
–2 00
3.5
0
0
25
50
75
1 00
125
150
Em i t t er C urre nt I
E
(A )
Co ll e ct o r - Em i t te r Vo lt a ge V
C E
( V)
A m b i e n t T em p e r at u r e T a ( ˚ C )
56