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2SB1659P 参数 Datasheet PDF下载

2SB1659P图片预览
型号: 2SB1659P
PDF下载: 下载PDF文件 查看货源
内容描述: [Power Bipolar Transistor, 6A I(C), 110V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, MT25, 3 PIN]
分类和应用: 晶体稳压器晶体管功率双极晶体管开关局域网
文件页数/大小: 1 页 / 25 K
品牌: SANKEN [ SANKEN ELECTRIC ]
   
( 7 0Ω ) E
Darlington
s
Absolute maximum ratings
(Ta=25°C)
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
Tj
T
stg
2SB1659
–110
–110
–5
–6
–1
50(Tc=25°C)
150
–55 to +150
Unit
V
V
V
A
A
W
°C
°C
2SB1659
s
Electrical Characteristics
Symbol
I
CBO
I
EBO
V
(BR)CEO
h
FE
V
CE
(sat)
V
BE
(sat)
f
T
C
OB
Conditions
V
CB
=–110V
V
EB
=–5V
I
C
=–30mA
V
CE
=–4V, I
C
=–5A
I
C
=–5A, I
B
=–5mA
I
C
=–5A, I
B
=–5mA
V
CE
=–12V, I
E
=0.5A
V
CB
=–10V, f=1MHz
2SB1659
–100
max
–100
max
–110
min
5000
min
–2.5
max
–3.0
max
100
typ
110
typ
V
V
MHz
pF
12.0min
4.0max
B
Equivalent circuit
C
Silicon PNP Epitaxial Planar Transistor
(Complement to type 2SD2589)
Application :
Audio, Series Regulator and General Purpose
(Ta=25°C)
Unit
External Dimensions
MT-25(TO220)
3.0
±0.2
10.2
±0.2
4.8
±0.2
2.0
±0.1
µ
A
µ
A
16.0
±0.7
V
8.8
±0.2
a
b
ø3.75
±0.2
1.35
0.65
+0.2
-0.1
2.5
B C E
2.5
1.4
∗h
FE
Rank O(5000 to 12000), P(6500 to 20000), Y(15000 to 30000)
s
Typical Switching Characteristics (Common Emitter)
V
CC
(V)
–30
R
L
(Ω)
6
I
C
(A)
–5
V
BB1
(V)
–10
V
BB2
(V)
5
I
B1
(mA)
–5
I
B2
(mA)
5
t
on
(
µ
s)
1.1typ
t
stg
(
µ
s)
3.2typ
t
f
(
µ
s)
1.1typ
Weight : Approx 2.0g
a. Type No.
b. Lot No.
I
C
– V
CE
Characteristics
(Typical)
A
m
–1
V
CE
(sat ) – I
B
Characteristics
(Typical)
C ol l e c t o r - E m i t te r S at u r a t i o n Vo l t a g e V
C E(s at)
( V)
–3
I
C
– V
B E
Temperature Characteristics
(Typical)
–6
( V
CE
=– 4 V )
–6
A
–5m
–0
.5
m
A
–0
A
.4m
– 0 .3 m A
C o l l ec t or C u r r e n t I
C
( A )
–0 .2 mA
–4
C ol l e c t o r C ur r en t I
C
( A )
–2
– 5A
–4
I
B
=–0 .1m A
I
C
= – 3 A
–1
125
˚C
(Ca
s
–2
–2
0
0
–2
–4
–6
0
– 0 .1
–0.5 –1
–5 –10
Bas e C u r r e nt I
B
( m A)
–50 –100
0
0
–1
eT
em
p)
(Ca
seT
–30
emp
˚C (
Cas
)
eT e
mp)
25˚C
–2
–3
C ol l ec t or - Emi tte r V ol ta ge V
C E
(V )
B a s e - E m i tt o r Vo l ta g e V
B E
( V)
h
FE
– I
C
Characteristics
(Typical)
(V
C E
= – 4 V )
40000
DC C ur re nt Ga i n h
F E
h
F E
– I
C
Temperature Characteristics
(Typical)
( V
C E
= – 4V )
50000
12 5˚ C
Transient Thermal Resistance
θ
j-a
(˚ C/ W )
5
θ
j - a
– t Characteristics
DC C ur r e nt Ga i n h
FE
Typ
10000
5000
2 5˚ C
10000
5000
– 30 ˚ C
1000
500
200
–0.02
1000
500
1
0. 5
0. 4
1
10
100
Time t(ms)
10 0 0 2 00 0
–0.0 5 – 0. 1
–0 .5
–1
–5 –6
100
–0.02
– 0 .0 5 –0 . 1
–0 . 5
–1
–5 –6
Co l l ect or C u rren t I
C
(A )
Co l le c to r Cu r r en t I
C
( A)
f
T
– I
E
Characteristics
(Typical)
(V
C E
=– 1 2 V )
120
Safe Operating Area
(Single Pulse)
50
Pc – T a Derating
100
C ut- off Fr e q u e n c y f
T
( M H
Z
)
Typ
M ax im um P ow er D i s s i p a t i o n P
C
( W )
40
W
ith
80
In
fin
30
ite
he
60
at
si
nk
20
40
20
10
W i t h o u t H e a ts i n k
0
25
50
75
100
125
150
0
0.02
0. 05
0. 1
0 .5
1
5 6
2
0
Emi t t e r C u rren t I
E
(A)
Am b i e n t T e m pe r a t u r e T a( ˚ C)
57