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2SB1648 参数 Datasheet PDF下载

2SB1648图片预览
型号: 2SB1648
PDF下载: 下载PDF文件 查看货源
内容描述: PNP硅外延平面型晶体管(音频,系列稳压器和通用) [Silicon PNP Epitaxial Planar Transistor(Audio, Series Regulator and General Purpose)]
分类和应用: 晶体稳压器晶体管功率双极晶体管放大器局域网
文件页数/大小: 1 页 / 26 K
品牌: SANKEN [ SANKEN ELECTRIC ]
   
( 7 0Ω ) E
Darlington
s
Absolute maximum ratings
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
Tj
T
stg
2SB1648
–150
–150
–5
–17
–1
200(Tc=25°C)
150
–55 to +150
(Ta=25°C)
Unit
V
V
V
A
A
W
°C
°C
2SB1648
s
Electrical Characteristics
Symbol
I
CBO
I
EBO
V
(BR)CEO
h
FE
V
CE
(sat)
V
BE
(sat)
f
T
C
OB
Conditions
V
CB
=–150V
V
EB
=–5V
I
C
=–30mA
V
CE
=–4V, I
C
=–10A
I
C
=–10A, I
B
=–10mA
I
C
=–10A, I
B
=–10mA
V
CE
=–12V, I
E
=2A
V
CB
=–10V, f=1MHz
(Ta=25°C)
2SB1648
–100
max
–100
max
–150
min
5000
min
–2.5
max
–3.0
max
45
typ
320
typ
V
V
20.0min
4.0max
B
Equivalent circuit
C
Silicon PNP Epitaxial Planar Transistor
(Complement to type 2SD2561)
Application :
Audio, Series Regulator and General Purpose
External Dimensions
MT-200
36.4
±0.3
24.4
±0.2
2-ø3.2
±0.1
9
7
21.4
±0.3
2.1
6.0
±0.2
Unit
µ
A
µ
A
V
a
b
MHz
pF
2
3
1.05
+0.2
-0.1
5.45
±0.1
B
C
E
5.45
±0.1
0.65
+0.2
-0.1
3.0
+0.3
-0.1
∗h
FE
Rank O(5000 to 12000), P(6500 to 20000), Y(15000 to 30000)
s
Typical Switching Characteristics (Common Emitter)
V
CC
(V)
–40
R
L
(Ω)
4
I
C
(A)
–10
V
BB1
(V)
–10
V
BB2
(V)
5
I
B1
(mA)
–10
I
B2
(mA)
10
t
on
(
µ
s)
0.7typ
t
stg
(
µ
s)
1.6typ
t
f
(
µ
s)
1.1typ
Weight : Approx 18.4g
a. Type No.
b. Lot No.
I
C
– V
CE
Characteristics
(Typical)
0m
A
–1
V
CE
(sat) – I
B
Characteristics
(Typical)
C o l l e c t o r - E m i t te r S a tu r a t i o n Vo l t a g e V
C E(s at)
( V)
–3
I
C
– V
B E
Temperature Characteristics
(Typical)
17
15
C ol l e c t o r C ur r en t I
C
( A )
( V
CE
=– 4 V )
–17
mA
–3mA
–2mA
–15
–50
–1 .5 m A
C o l l e c t o r Cu r r e n t I
C
( A)
–1. 0m A
–0. 8m A
–10
–0.5m A
5˚C
emp
)
se T
–30
˚C (
–5
5
0
0
–2
–4
–6
0
–0.2
–0.5 –1
–5
–10
–50 –100 –200
0
0
–1
25˚
C
(Ca
–1
Cas
e
I
B
=–0.3mA
I
C
= –5 A
–2
Tem
p)
I
C
=–1 0A
12
(Ca
se
I
C
=–15 A
10
Te
–2
mp
)
–3
C ol l ec t or - Emi tt er Vo l t ag e V
C E
( V)
Bas e C ur r e nt I
B
( m A)
B as e- Em i t t or V o l t a g e V
BE
( V )
50,000
DC Cu r r e n t Ga i n h
FE
( V
CE
= – 4 V )
50000
DC Cu r r e n t Ga i n h
FE
12 5 ˚ C
25 ˚ C
10000
5000
– 3 0˚ C
( V
C E
= – 4V )
Transient Thermal Resistance
θ
j- a
( ˚ C / W )
h
FE
– I
C
Characteristics
(Typical)
h
F E
– I
C
Temperature Characteristics
(Typical)
θ
j - a
– t Characteristics
2
Typ
1
10,000
5,000
0.5
1,000
–0.2
–0 . 5
–1
–5
–10
–17
1000
–0.2
–0 .5
–1
–5
–1 0
– 17
0.1
1
10
100
Time t(ms)
1 00 0 2 0 0 0
C o ll e ct o r Cu rren t I
C
( A)
Co l l ec to r C ur r en t I
C
( A)
f
T
– I
E
Characteristics
(Typical)
(V
C E
=– 1 2 V )
60
Safe Operating Area
(Single Pulse)
20 0
P c – Ta Derating
M a xim u m P o we r D i s s i p a t i o n P
C
( W )
C ut- off Fr e q u e n c y f
T
( M H
Z
)
16 0
W
ith
40
In
fin
12 0
ite
he
at
si
nk
80
20
40
W i t ho u t He a t s i n k
0
25
50
75
100
125
1 50
0
0.02
0.05 0 . 1
0 .5
1
5
10
5
0
Em it t e r Curr en t I
E
( A)
A m b i en t T e m p e r a tu r e T a ( ˚ C )
55