欢迎访问ic37.com |
会员登录 免费注册
发布采购

2SB1624 参数 Datasheet PDF下载

2SB1624图片预览
型号: 2SB1624
PDF下载: 下载PDF文件 查看货源
内容描述: PNP硅外延平面型晶体管(音频,系列稳压器和通用) [Silicon PNP Epitaxial Planar Transistor(Audio, Series Regulator and General Purpose)]
分类和应用: 晶体稳压器晶体管功率双极晶体管开关局域网
文件页数/大小: 1 页 / 27 K
品牌: SANKEN [ SANKEN ELECTRIC ]
   
(7 0
) E
Darlington
s
Absolute maximum ratings
(Ta=25°C)
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
Tj
T
stg
2SB1624
–110
–110
–5
–6
–1
60(Tc=25°C)
150
–55 to +150
Unit
V
V
V
A
A
W
°C
°C
2SB1624
s
Electrical Characteristics
Symbol
I
CBO
I
EBO
V
(BR)CEO
h
FE
V
CE
(sat)
V
BE
(sat)
f
T
C
OB
Conditions
V
CB
=–110V
V
EB
=–5V
I
C
=–30mA
V
CE
=–4V, I
C
=–5A
I
C
=–5A, I
B
=–5mA
I
C
=–5A, I
B
=–5mA
V
CE
=–12V, I
E
=0.5A
V
CB
=–10V, f=1MHz
2SB1624
–100
max
–100
max
–110
min
5000
min
–2.5
max
–3.0
max
100
typ
110
typ
V
V
MHz
pF
20.0min
4.0max
3
B
Equivalent circuit
C
Silicon PNP Epitaxial Planar Transistor
(Complement to type 2SD2493)
Application :
Audio, Series Regulator and General Purpose
(Ta=25°C)
Unit
5.0
±0.2
1.8
External Dimensions
MT-100(TO3P)
15.6
±0.4
9.6
2.0
4.8
±0.2
2.0
±0.1
µ
A
µ
A
19.9
±0.3
V
4.0
a
b
ø3.2
±0.1
2
1.05
+0.2
-0.1
5.45
±0.1
B
C
E
5.45
±0.1
0.65
+0.2
-0.1
1.4
∗h
FE
Rank O(5000 to 12000), P(6500 to 20000), Y(15000 to 30000)
s
Typical Switching Characteristics (Common Emitter)
V
CC
(V)
–30
R
L
(Ω)
6
I
C
(A)
–5
V
BB1
(V)
–10
V
BB2
(V)
5
I
B1
(mA)
–5
I
B2
(mA)
5
t
on
(
µ
s)
1.1typ
t
stg
(
µ
s)
3.2typ
t
f
(
µ
s)
1.1typ
Weight : Approx 6.0g
a. Type No.
b. Lot No.
I
C
– V
CE
Characteristics
(Typical)
C ol l e c t o r - E m i t te r S at u r a t i o n Vo l t a g e V
C E(s at)
( V)
–6
A
–5m
m
5m
–1
–0.
A
.4m
–0
A
V
C E
( sat ) – I
B
Characteristics
(Typical)
–3
I
C
– V
B E
Temperature Characteristics
(Typical)
–6
( V
C E
= – 4V )
A
– 0 .3 m A
C o l l ec t or C u r r e n t I
C
( A )
–0 .2 mA
–4
C o l l e c t o r C u r r e nt I
C
( A )
–2
–5 A
–4
(Ca
125
˚C
25˚C
0
0
–2
–4
–6
0
–0.1
–0.5 –1
–5 –10
–50 –100
0
0
–1
–30
(Ca
se T
se
–2
–1
–2
emp
˚C (
)
Cas
e Te
mp)
Tem
I
B
=–0 .1m A
p)
I
C
= – 3A
–2
–3
Col l e ct o r- Em i t ter Vo l t ag e V
C E
(V )
Ba se C u r r e nt I
B
( m A)
Ba s e - E m i t to r V ol t ag e V
B E
( V)
(V
CE
=– 4 V)
40,000
D C Cu r r en t G a i n h
FE
50,000
( V
C E
= –4 V )
1 2 5˚ C
D C Cu r r en t G a i n h
FE
Transient Thermal Resistance
θ
j -a
( ˚ C/ W )
h
FE
– I
C
Characteristics
(Typical)
h
F E
– I
C
Temperature Characteristics
(Typical)
θ
j - a
– t Characteristics
5
Typ
10,000
5,000
2 5˚ C
– 30 ˚ C
5,000
10,000
1,000
500
200
–0.2
1,000
500
1
0. 5
1
5
10
50
1 00
5 0 0 10 0 0 2 0 0 0
– 0. 1
–0 .5
–1
–5 –6
100
– 0 .0 2
–0 .1
–0 .5
–1
–5 –6
Co l le ct o r Cu rre nt I
C
(A)
Co l l ec to r C ur r en t I
C
( A )
Time t(ms)
f
T
– I
E
Characteristics
(Typical)
( V
C E
=– 1 2 V )
120
–20
–10
–5
Co llec to r C u r r e n t I
C
( A )
Safe Operating Area
(Single Pulse)
60
Pc – Ta Derating
Typ
100
Cut- o ff Fre qu e n c y f
T
(M H
Z
)
10
m
Ma xi mu m P o we r D i s s i p at i o n P
C
(W )
W
10
s
ith
80
DC
–1
–0.5
0m
s
40
In
fin
ite
he
60
at
si
nk
40
20
20
–0.1
Without Heatsink
Natural Cooling
W i t h ou t H ea t s i nk
0
0.02
0.0 5
0.1
0 .5
1
5 6
– 0 .0 5
–5
–10
–5 0
– 10 0
–2 00
3 .5
0
0
25
50
75
10 0
125
150
Em it t e r Curr en t I
E
( A)
C o ll e ct o r - Em i t t er Vo lt a ge V
C E
( V)
A m b i e n t T em p e r at u r e T a ( ˚ C )
51