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2SB1588_07 参数 Datasheet PDF下载

2SB1588_07图片预览
型号: 2SB1588_07
PDF下载: 下载PDF文件 查看货源
内容描述: PNP硅外延平面晶体管 [Silicon PNP Epitaxial Planar Transistor]
分类和应用: 晶体晶体管
文件页数/大小: 1 页 / 31 K
品牌: SANKEN [ SANKEN ELECTRIC ]
   
(7 0
Ω)
E
Darlington
s
Absolute maximum ratings
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
Tj
T
stg
Ratings
–160
–150
–5
–10
–1
80(Tc=25°C)
150
–55 to +150
(Ta=25°C)
Unit
V
V
V
A
A
W
°C
°C
2SB1588
s
Electrical Characteristics
Symbol
I
CBO
I
EBO
V
(BR)CEO
h
FE
V
CE
(sat)
V
BE
(sat)
f
T
C
OB
Conditions
V
CB
=–160V
V
EB
=–5V
I
C
=–30mA
V
CE
=–4V, I
C
=–7A
I
C
=–7A, I
B
=–7mA
I
C
=–7A, I
B
=–7mA
V
CE
=–12V, I
E
=2A
V
CB
=–10V, f=1MHz
Ratings
–100
max
–100
max
–150
min
5000
min
–2.5
max
–3.0
max
50
typ
230
typ
V
V
pF
16.2
B
Equivalent circuit
C
Silicon PNP Epitaxial Planar Transistor
(Complement to type 2SD2439)
Application :
Audio, Series Regulator and General Purpose
(Ta=25°C)
Unit
External Dimensions
FM100(TO3PF)
0.8
±0.2
15.6
±0.2
5.5
±0.2
3.45
±0.2
5.5
ø3.3
±0.2
1.6
µ
A
V
9.5
±0.2
µ
A
23.0
±0.3
a
b
MHz
1.75
2.15
1.05
+0.2
-0.1
5.45
±0.1
1.5
4.4
5.45
±0.1
1.5
0.65
+0.2
-0.1
3.3
0.8
∗h
FE
Rank O(5000 to 12000), P(6500 to 20000), Y(15000 to 30000)
3.35
s
Typical Switching Characteristics (Common Emitter)
V
CC
(V)
–70
R
L
(Ω)
10
I
C
(A)
–7
V
BB1
(V)
–10
V
BB2
(V)
5
I
B1
(mA)
–7
I
B2
(mA)
7
t
on
(
µ
s)
0.8typ
t
stg
(
µ
s)
3.0typ
t
f
(
µ
s)
1.2typ
B
C
E
Weight : Approx 6.5g
a. Part No.
b. Lot No.
I
C
– V
CE
Characteristics
(Typical)
mA
V
CE
(sat ) – I
B
Characteristics
(Typical)
C ol l e c t o r - E m i tt e r S at u r a t i o n V o lt a g e V
C E(s a t)
(V )
–3
I
C
– V
BE
Temperature Characteristics
(Typical)
–10
( V
C E
= –4 V )
–10
–2
.5
mA
m
–2.0
A
–10
–1 .5 m A
–1 .2m A
C o l l ec t or C u r r e n t I
C
( A)
–1. 0mA
–2
–6
–0.8 mA
–0.6 mA
C ol l e c t o r C ur r e nt I
C
( A )
–8
–8
–6
– 10 A
– 7A
I
C
= – 5A
–1
125˚
C (C
ase T
emp
)
)
I
B
=–0.4mA
Temp
–4
–4
0
0
–2
–4
–6
0
–0.2
–0.5 –1
–5
–10
–50 –100 –200
0
0
–1
–30˚C
25˚C
–2
–2
(Case
(Case
Temp
)
–2
Co l l ec t or - Emi t t e r V ol ta ge V
C E
(V )
Bas e C u r r e nt I
B
( m A)
Ba s e - E m i t to r V o l t a ge V
BE
( V )
( V
CE
= – 4 V )
40,000
DC C ur re nt Ga i n h
FE
DC C ur re nt Ga i n h
FE
50,000
( V
C E
= – 4V)
Transient Thermal Resistance
θ
j -a
( ˚ C / W )
h
F E
– I
C
Characteristics
(Typical)
h
F E
– I
C
Temperature Characteristics
(Typical)
θ
j- a
– t Characteristics
3
1 25 ˚ C
10,000
5,000
Typ
10,000
5,000
25˚C
–3 0˚ C
1
0.5
1,000
1,000
–0.2
–0. 5
–1
C ol l ec t or C u rre nt I
C
( A)
–5
–10
500
– 0 .2
–0 .5
–1
–5
–1 0
0.1
1
5
10
50 1 00
Time t(ms)
5 00 10 0 0
3.0
–2.5
20 0 0
C ol l ec t or C ur r en t I
C
( A)
f
T
– I
E
Characteristics
(Typical)
( V
C E
=– 12 V )
100
–30
Safe Operating Area
(Single Pulse)
80
P c – Ta Derating
80
Cu t-o ff Fr e qu e n c y f
T
( M H
Z
)
C oll ec to r Cu rr en t I
C
(A )
–10
–5
DC
10
m
0m
s
s
Ma x imu m P ow e r D i s s i p a t i o n P
C
(W )
10
W
60
ith
In
fin
60
Typ
ite
he
–1
– 0 .5
Without Heatsink
Natural Cooling
– 0 .1
40
at
si
nk
40
20
20
0
0.02
0.05 0 . 1
0.5
1
5
10
–0.05
–3
–5
– 10
– 50
–1 00
– 20 0
3. 5
0
W i t ho u t He a t s i n k
0
25
50
75
100
12 5
15 0
Emi t t e r Curre nt I
E
(A )
Co l l ec to r - Em i tt er Vo l ta g e V
C E
( V)
Am b i e n t T e m pe r a t u r e T a( ˚ C)
51