欢迎访问ic37.com |
会员登录 免费注册
发布采购

2SB1560_07 参数 Datasheet PDF下载

2SB1560_07图片预览
型号: 2SB1560_07
PDF下载: 下载PDF文件 查看货源
内容描述: PNP硅外延平面晶体管 [Silicon PNP Epitaxial Planar Transistor]
分类和应用: 晶体晶体管
文件页数/大小: 1 页 / 30 K
品牌: SANKEN [ SANKEN ELECTRIC ]
   
(7 0
) E
Darlington
s
Absolute maximum ratings
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
Tj
T
stg
Ratings
–160
–150
–5
–10
–1
100(Tc=25°C)
150
–55 to +150
(Ta=25°C)
Unit
V
V
V
A
A
W
°C
°C
2SB1560
s
Electrical Characteristics
Symbol
I
CBO
I
EBO
V
(BR)CEO
h
FE
V
CE
(sat)
V
BE
(sat)
fr
C
OB
Conditions
V
CB
=–160V
V
EB
=–5V
I
C
=–30mA
V
CE
=–4V, I
C
=–7A
I
C
=–7A, I
B
=–7mA
I
C
=–7A, I
B
=–7mA
V
CE
=–12V, I
E
=2A
V
CB
=–10V, f=1MHz
Ratings
–100
max
–100
max
–150
min
5000
min
–2.5
max
–3.0
max
50
typ
230
typ
V
V
MHz
pF
20.0min
4.0max
3
B
Equivalent circuit
C
Silicon PNP Epitaxial Planar Transistor
(Complement to type 2SD2390)
Application :
Audio, Series Regulator and General Purpose
(Ta=25°C)
Unit
5.0
±0.2
1.8
External Dimensions
MT-100(TO3P)
15.6
±0.4
9.6
2.0
4.8
±0.2
2.0
±0.1
µ
A
µ
A
19.9
±0.3
V
4.0
a
b
ø3.2
±0.1
2
1.05
+0.2
-0.1
5.45
±0.1
B
C
E
5.45
±0.1
0.65
+0.2
-0.1
1.4
∗h
FE
Rank O(5000 to 12000), P(6500 to 20000), Y(15000 to 30000)
s
Typical Switching Characteristics (Common Emitter)
V
CC
(V)
–70
R
L
(Ω)
10
I
C
(A)
–7
V
BB1
(V)
–10
V
BB2
(V)
5
I
B1
(mA)
–7
I
B2
(mA)
7
t
on
(
µ
s)
0.8typ
t
stg
(
µ
s)
3.0typ
t
f
(
µ
s)
1.2typ
Weight : Approx 6.0g
a. Part No.
b. Lot No.
I
C
– V
C E
Characteristics
(Typical)
mA
V
CE
( sat ) – I
B
Characteristics
(Typical)
C o l l e c to r - E m i t t er S a t ur a t i o n Vo l ta g e V
CE (sat )
(V )
–3
I
C
– V
BE
Temperature Characteristics
(Typical)
– 10
( V
C E
=– 4 V )
–10
–2
.5
mA
mA
–2.0
–10
–1 .5 m A
–1 .2m A
C ol l e c t o r C ur r en t I
C
( A)
–1. 0mA
–2
–6
–0.8 mA
–0.6 mA
C o l l ec t or C u r r e n t I
C
( A )
–8
–8
–6
–1 0A
–7 A
I
C
= – 5A
–1
125˚
C (C
ase T
emp
)
I
B
=–0.4mA
Temp
(Case
25˚C
–4
–4
0
0
–2
–4
–6
0
–0.2
–0.5 –1
–5
–10
–50 –100 –200
0
0
–1
–30˚C
–2
–2
(Case
Temp
)
)
–2
–2 . 5
C o l l ect o r - Em i t te r V ol ta ge V
C E
(V)
Bas e C ur r en t I
B
( m A)
B as e - Em i t t o r Vo l t a g e V
BE
( V )
(V
C E
= – 4 V )
40,000
DC C u r r e nt Ga i n h
FE
DC C u r r e nt Ga i n h
FE
50000
( V
C E
= – 4V)
Transient Thermal Resistance
θ
j -a
(˚ C/ W )
h
FE
– I
C
Characteristics
(Typical)
h
F E
– I
C
Temperature Characteristics
(Typical)
θ
j- a
– t Characteristics
3
1 2 5˚ C
10000
5000
Typ
10,000
5,000
25 ˚ C
– 30 ˚ C
1
0 .5
1000
1,000
–0.2
–0. 5
–1
Co l l ec t or C urre nt I
C
( A)
–5
–10
500
– 0 .2
–0 . 5
–1
C ol l ec t or C ur r en t I
C
( A)
–5
– 10
0 .1
1
5
10
5 0 10 0
Time t(ms)
5 0 0 1 0 0 0 2 00 0
f
T
– I
E
Characteristics
(Typical)
( V
C E
=–1 2 V)
100
–30
Safe Operating Area
(Single Pulse)
100
Pc – Ta Derating
80
Cut- off Fr e q u e n c y f
T
(M H
Z
)
Co llec to r C u r r e n t I
C
( A)
–10
–5
10
DC
0m
m
s
s
M ax im um P ow e r Di s s i p a ti o n P
C
( W )
10
W
ith
In
fin
60
Typ
ite
he
–1
–0.5
Without Heatsink
Natural Cooling
–0.1
50
at
si
nk
40
20
0
0.02
0.05 0. 1
0 .5
1
5
10
–0.05
–3
–5
– 10
–5 0
– 10 0
–2 0 0
3.5
0
W i th o u t H e a t s i n k
0
25
50
75
1 00
125
150
Em it t e r Curr en t I
E
(A)
C ol l ec t or - Em i tt e r V ol t ag e V
C E
( V)
A m b i en t T e m p e r a t ur e T a ( ˚ C )
48