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2SB1559_07 参数 Datasheet PDF下载

2SB1559_07图片预览
型号: 2SB1559_07
PDF下载: 下载PDF文件 查看货源
内容描述: PNP硅外延平面晶体管 [Silicon PNP Epitaxial Planar Transistor]
分类和应用: 晶体晶体管
文件页数/大小: 1 页 / 30 K
品牌: SANKEN [ SANKEN ELECTRIC ]
   
(7 0
) E
Darlington
s
Absolute maximum ratings
(Ta=25°C)
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
Tj
T
stg
Ratings
–160
–150
–5
–8
–1
80(Tc=25°C)
150
–55 to +150
Unit
V
V
V
A
A
W
°C
°C
2SB1559
s
Electrical Characteristics
Symbol
I
CBO
I
EBO
V
(BR)CEO
h
FE
V
CE
(sat)
V
BE
(sat)
f
T
C
OB
Conditions
V
CB
=–160V
V
EB
=–5V
I
C
=–30mA
V
CE
=–4V, I
C
=–6A
I
C
=–6A, I
B
=–6mA
I
C
=–6A, I
B
=–6mA
V
CE
=–12V, I
E
=1A
V
CB
=–10V, f=1MHz
Ratings
–100
max
–100
max
–150
min
5000
min
–2.5
max
–3.0
max
65
typ
160
typ
V
V
MHz
pF
20.0min
4.0max
3
B
Equivalent circuit
C
Silicon PNP Epitaxial Planar Transistor
(Complement to type 2SD2389)
Application :
Audio, Series Regulator and General Purpose
(Ta=25°C)
Unit
5.0
±0.2
External Dimensions
MT-100(TO3P)
15.6
±0.4
9.6
2.0
1.8
4.8
±0.2
2.0
±0.1
µ
A
µ
A
19.9
±0.3
V
4.0
a
b
ø3.2
±0.1
2
1.05
+0.2
-0.1
5.45
±0.1
B
C
E
5.45
±0.1
0.65
+0.2
-0.1
1.4
∗h
FE
Rank O(5000 to 12000), P(6500 to 20000), Y(15000 to 30000)
s
Typical Switching Characteristics (Common Emitter)
V
CC
(V)
–60
R
L
(Ω)
10
I
C
(A)
–6
V
BB1
(V)
–10
V
BB2
(V)
5
I
B1
(mA)
–6
I
B2
(mA)
6
t
on
(
µ
s)
0.7typ
t
stg
(
µ
s)
3.6typ
t
f
(
µ
s)
0.9typ
Weight : Approx 6.0g
a. Part No.
b. Lot No.
I
C
– V
CE
Characteristics
(Typical)
m
A
V
CE
( sat ) – I
B
Characteristics
(Typical)
C o l l e c t o r - Em i t t e r Sa t u r a ti o n V ol t ag e V
C E( sat)
( V )
–3
I
C
– V
B E
Temperature Characteristics
(Typical)
–8
( V
CE
= – 4 V )
–2
–8
mA
.5
–10
A
2.0m
A
– 1 .8 m
A
– 1 .5 m
–1 .3m A
–1 .0 m A
–0.8 mA
Co l l e c t o r C ur r en t I
C
( A )
Co l l e c t o r C ur r en t I
C
( A)
–6
–6
–2
–8 A
–6 A
I
C
= –4 A
–4
–0.5 mA
–4
p)
se
(Ca
Tem
˚C
se T
(Ca
25˚C
I
B
=–0.3mA
–2
–1
–2
125
0
0
–2
–4
–6
0
–0.2
–0.5 –1
–5
–10
–50 –100 –200
0
0
–1
–30
˚C (
Cas
emp
)
e Te
mp)
–2
–3
C oll e ct or - Em it t e r V ol ta ge V
C E
(V)
Ba s e Cu r r en t I
B
( m A)
Ba s e - E m i tt o r V ol t ag e V
BE
( V)
(V
C E
=– 4 V)
40,000
D C C ur re n t Gai n h
FE
D C C ur re n t Gai n h
FE
50000
1 25 ˚ C
( V
C E
= –4 V)
Transient Thermal Resistance
θ
j -a
( ˚C /W )
h
FE
– I
C
Characteristics
(Typical)
h
F E
– I
C
Temperature Characteristics
(Typical)
θ
j - a
– t Characteristics
4
Typ
2 5˚ C
10000
–3 0˚ C
5000
10,000
1
5,000
0. 5
2,000
–0.2
–0. 5
–1
C ol l ec t or C urren t I
C
( A)
–5
–8
1000
–0.2
0. 2
– 0. 5
–1
–5
–8
Co l le c to r C ur r en t I
C
( A)
1
5
10
50 100
Time t(ms)
50 0 10 0 0 2 0 0 0
f
T
– I
E
Characteristics
(Typical)
(V
C E
= –1 2 V)
100
–20
–10
Cut- off F r e q u en c y f
T
( M H
Z
)
80
Co llec to r C u r r e n t I
C
( A )
Safe Operating Area
(Single Pulse)
80
10
0m
s
Pc – Ta Derating
m
s
–5
Typ
60
D
M a xim u m P o we r D i s s i p a t i o n P
C
( W )
10
C
60
W
ith
In
fin
ite
he
–1
–0.5
Without Heatsink
Natural Cooling
–0.1
40
at
si
nk
40
20
20
W i t h ou t H ea t s i n k
0
0.02
0.05
0.1
0.5
1
5
8
– 0 .0 5
–2
–5
– 10
– 50
– 10 0
–2 00
3.5
0
0
25
50
75
100
1 25
150
Emi t t e r Cu rre nt I
E
(A )
C ol l ec t or - Em i tt e r V ol t ag e V
C E
( V)
Am b i e nt T e m pe r a t u r e T a ( ˚ C)
47