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2SB1587_07 参数 Datasheet PDF下载

2SB1587_07图片预览
型号: 2SB1587_07
PDF下载: 下载PDF文件 查看货源
内容描述: PNP硅外延平面晶体管 [Silicon PNP Epitaxial Planar Transistor]
分类和应用: 晶体晶体管
文件页数/大小: 1 页 / 36 K
品牌: SANKEN [ SANKEN ELECTRIC ]
   
(7 0
) E
Darlington
s
Absolute maximum ratings
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
Tj
T
stg
Ratings
–160
–150
–5
–8
–1
75(Tc=25°C)
150
–55 to +150
(Ta=25°C)
Unit
V
V
V
A
A
W
°C
°C
2SB1587
s
Electrical Characteristics
Symbol
I
CBO
I
EBO
V
(BR)CEO
h
FE
V
CE
(sat)
V
BE
(sat)
f
T
C
OB
Conditions
V
CB
=–160V
V
EB
=–5V
I
C
=–30mA
V
CE
=–4V, I
C
=–6A
I
C
=–6A, I
B
=–6mA
I
C
=–6A, I
B
=–6mA
V
CE
=–12V, I
E
=1A
V
CB
=–10V, f=1MHz
Ratings
–100
max
–100
max
–150
min
5000
min
–2.5
max
–3.0
max
65
typ
160
typ
V
V
pF
16.2
B
Equivalent circuit
C
Silicon PNP Epitaxial Planar Transistor
(Complement to type 2SD2438)
Application :
Audio, Series Regulator and General Purpose
(Ta=25°C)
Unit
External Dimensions
FM100(TO3PF)
0.8
±0.2
15.6
±0.2
5.5
±0.2
3.45
±0.2
5.5
ø3.3
±0.2
1.6
µ
A
V
9.5
±0.2
µ
A
23.0
±0.3
a
b
MHz
1.75
2.15
1.05
+0.2
-0.1
5.45
±0.1
1.5
4.4
5.45
±0.1
1.5
0.65
+0.2
-0.1
3.3
0.8
∗h
FE
Rank O(5000 to 12000), P(6500 to 20000), Y(15000 to 30000)
s
Typical Switching Characteristics (Common Emitter)
V
CC
(V)
–60
R
L
(Ω)
10
I
C
(A)
–6
V
BB1
(V)
–10
V
BB2
(V)
5
I
B1
(mA)
–6
I
B2
(mA)
6
t
on
(
µ
s)
0.7typ
t
stg
(
µ
s)
3.6typ
t
f
(
µ
s)
0.9typ
3.35
B
C
E
Weight : Approx 6.5g
a. Part No.
b. Lot No.
I
C
– V
CE
Characteristics
(Typical)
m
A
V
CE
( sat ) – I
B
Characteristics
(Typical)
Co l l e c t o r - Em i t t e r Sa t u r a ti o n V o lt a ge V
C E(s at)
( V )
–3
I
C
– V
B E
Temperature Characteristics
(Typical)
–8
( V
C E
=– 4 V )
–2
–8
mA
.5
–10
m
–2.0
A
– 1 .8 m
A
A
– 1 .5 m
–1 .3m A
–1 .0 m A
–0.8 mA
C o l l e c to r C u r r e n t I
C
( A )
C ol l e c t o r C ur r en t I
C
( A )
–6
–6
–2
– 8A
– 6A
I
C
= –4 A
–4
–0.5 mA
–4
p)
se
(Ca
125
˚C
0
0
–2
–4
–6
0
–0.2
–0.5 –1
–5
–10
–50 –100 –200
0
0
–1
25˚C
(Ca
–2
–2
–30
˚C (
Cas
se T
I
B
=–0.3mA
–1
emp
)
e Te
mp)
Tem
–2
C o l le ct o r - Em i t t er V ol ta ge V
C E
( V)
Ba s e C ur r en t I
B
( m A)
Ba s e- E m i t t or V o l t a ge V
BE
( V )
(V
C E
=– 4 V )
40,000
D C C u r r e n t Gai n h
F E
D C Cu r r en t G a i n h
FE
50000
1 25 ˚ C
( V
C E
= –4 V)
Transient Thermal Resistance
θ
j- a
( ˚C / W )
h
F E
– I
C
Characteristics
(Typical)
h
F E
– I
C
Temperature Characteristics
(Typical)
θ
j - a
– t Characteristics
4
Typ
2 5˚ C
10000
– 30 ˚ C
5000
10,000
1
5,000
0 .5
2,000
–0.2
–0 . 5
–1
C ol l ec t or Cur ren t I
C
(A )
–5
–8
1000
–0.2
0 .2
– 0. 5
–1
–5
–8
1
5
10
50 100
Time t(ms)
5 0 0 1 00 0
3.0
–3
2000
Co l l ec to r C ur r en t I
C
( A)
f
T
– I
E
Characteristics
(Typical)
(V
C E
=–1 2 V )
100
–20
–10
Cu t-o ff F re q u e n c y f
T
(M H
Z
)
80
Col lec to r Cu r r e n t I
C
(A )
Safe Operating Area
(Single Pulse)
80
10
0m
s
Pc – Ta Derating
m
s
–5
Typ
60
D
Ma x imu m P ow e r D i s s i p a t i o n P
C
(W )
10
C
60
W
ith
In
fin
ite
he
–1
– 0 .5
Without Heatsink
Natural Cooling
– 0 .1
40
at
si
nk
40
20
20
0
0.02
0.05
0. 1
0 .5
1
5
8
–0.05
–2
–5
– 10
–5 0
– 10 0
– 20 0
3. 5
0
W i t h o ut H e at s i n k
0
25
50
75
100
12 5
15 0
Em i t t er C urre nt I
E
(A)
Co l le c to r - Em it t er Vo l ta ge V
C E
( V)
Am b i e n t T e m pe r a t u r e T a( ˚ C)
50