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2SB1570O 参数 Datasheet PDF下载

2SB1570O图片预览
型号: 2SB1570O
PDF下载: 下载PDF文件 查看货源
内容描述: [Power Bipolar Transistor, 12A I(C), 150V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3 Pin, MT-200, 3 PIN]
分类和应用: 晶体稳压器晶体管功率双极晶体管放大器局域网
文件页数/大小: 1 页 / 27 K
品牌: SANKEN [ SANKEN ELECTRIC ]
   
( 7 0
Ω)
E
Darlington
s
Absolute maximum ratings
(Ta=25°C)
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
Tj
T
stg
2SB1570
–160
–150
–5
–12
–1
150(Tc=25°C)
150
–55 to +150
Unit
V
V
V
A
A
W
°C
°C
2SB1570
s
Electrical Characteristics
Symbol
I
CBO
I
EBO
V
(BR)CEO
h
FE
V
CE
(sat)
V
BE
(sat)
f
T
C
OB
Conditions
V
CB
=–160V
V
EB
=–5V
I
C
=–30mA
V
CE
=–4V, I
C
=–7A
I
C
=–7A, I
B
=–7mA
I
C
=–7A, I
B
=–7mA
V
CE
=–12V, I
E
=2A
V
CB
=–10V, f=1MHz
2SB1570
–100
max
–100
max
–150
min
5000
min
–2.5
max
–3.0
max
50
typ
230
typ
V
V
MHz
pF
20.0min
4.0max
B
Equivalent circuit
C
Silicon PNP Epitaxial Planar Transistor
(Complement to type 2SD2401)
Application :
Audio, Series Regulator and General Purpose
(Ta=25°C)
Unit
External Dimensions
MT-200
36.4
±0.3
24.4
±0.2
2-ø3.2
±0.1
9
7
21.4
±0.3
2.1
6.0
±0.2
µ
A
µ
A
V
a
b
2
3
1.05
+0.2
-0.1
5.45
±0.1
B
C
E
5.45
±0.1
0.65
+0.2
-0.1
3.0
+0.3
-0.1
∗h
FE
Rank O(5000 to 12000), P(6500 to 20000), Y(15000 to 30000)
s
Typical Switching Characteristics (Common Emitter)
V
CC
(V)
–70
R
L
(Ω)
10
I
C
(A)
–7
V
BB1
(V)
–10
V
BB2
(V)
5
I
B1
(mA)
–7
I
B2
(mA)
7
t
on
(
µ
s)
0.8typ
t
stg
(
µ
s)
3.0typ
t
f
(
µ
s)
1.2typ
Weight : Approx 18.4g
a. Type No.
b. Lot No.
I
C
– V
CE
Characteristics
(Typical)
C o l l e c to r - E m i t t er S a t ur a t i o n Vo l ta g e V
CE (s at)
(V )
–12
V
C E
( sat ) – I
B
Characteristics
(Typical)
–3
I
C
– V
BE
Temperature Characteristics
(Typical)
–1 2
( V
CE
= – 4 V )
–1
–10
C o l l e c to r C u r r e n t I
C
( A )
0m
A
– 2 .0 m A
–2 .0 m A
–1. 5m A
–1 0
C o l l e c t o r Cu r r e n t I
C
( A)
–8
–1.2 mA
–2
–8
–1. 0mA
–6
–0.8 mA
– 1 0A
–7 A
I
C
= – 5A
–1
–6
p)
Tem
ase
–4
C (C
–2
–2
0
0
–2
–4
–6
0
– 0 .2
–0.5 –1
–5
–10
–50 –100 –200
0
0
–1
–30˚C
125˚
25˚C
(Case
I
B
=–0.4mA
–4
(Cas
e Te
mp)
Temp
)
–0.6mA
–2
–2 . 5
Col l e ct o r- Em i t t er Vo l ta ge V
C E
( V)
Ba se Cu r r e n t I
B
( m A)
Ba s e- E m i t t or V o l t a ge V
B E
( V )
(V
C E
= – 4 V )
40,000
D C Cu rr en t Ga i n h
FE
D C Cu rr en t Ga i n h
FE
50000
1 2 5˚ C
( V
C E
= – 4 V)
Transient Thermal Resistance
θ
j-a
( ˚C / W )
h
FE
– I
C
Characteristics
(Typical)
h
F E
– I
C
Temperature Characteristics
(Typical)
θ
j - a
– t Characteristics
2
Typ
25 ˚ C
10000
– 30 ˚ C
5000
1
10,000
5,000
0.5
0.1
1,000
–0.2
–0. 5
–1
Co l l ect o r Curr en t I
C
(A)
–5
– 1 0– 1 2
1000
800
–0.2
– 0. 5
–1
Co l le c to r Cu r r en t I
C
( A)
–5
–10 –12
1
5
10
50
100
5 0 0 10 0 0
2 00 0
Time t(ms)
f
T
– I
E
Characteristics
(Typical)
(V
C E
=– 1 2 V)
100
–30
Safe Operating Area
(Single Pulse)
1 60
Pc – Ta Derating
Cu t-o ff F r e q u e n c y f
T
(M H
Z
)
80
C oll ec to r Cu rr en t I
C
(A )
–10
–5
10
m
s
0m
Ma x imu m P ow e r D i s s i p a t i o n P
C
( W )
10
DC
s
1 20
W
ith
In
fin
60
Typ
ite
he
–1
–0.5
Without Heatsink
Natural Cooling
–0.1
80
at
si
nk
40
40
20
0
0.02
0.05 0 . 1
0 .5
1
5
10
– 0 .0 5
–3
–5
–1 0
–5 0
– 10 0
–2 0 0
5
0
W i t h o ut H e at s i n k
0
25
50
75
100
125
150
Em i t t er C urr en t I
E
(A)
Co ll e ct o r - Em i t t er Vo lt a ge V
C E
( V)
Am b i e n t T e m p er at u r e T a ( ˚ C )
48