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2SB1560P 参数 Datasheet PDF下载

2SB1560P图片预览
型号: 2SB1560P
PDF下载: 下载PDF文件 查看货源
内容描述: [暂无描述]
分类和应用: 晶体稳压器晶体管功率双极晶体管放大器局域网
文件页数/大小: 1 页 / 28 K
品牌: SANKEN [ SANKEN ELECTRIC ]
   
(7 0
) E
Darlington
s
Absolute maximum ratings
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
Tj
T
stg
2SB1560
–160
–150
–5
–10
–1
100(Tc=25°C)
150
–55 to +150
(Ta=25°C)
Unit
V
V
V
A
A
W
°C
°C
2SB1560
s
Electrical Characteristics
Symbol
I
CBO
I
EBO
V
(BR)CEO
h
FE
V
CE
(sat)
V
BE
(sat)
fr
C
OB
Conditions
V
CB
=–160V
V
EB
=–5V
I
C
=–30mA
V
CE
=–4V, I
C
=–7A
I
C
=–7A, I
B
=–7mA
I
C
=–7A, I
B
=–7mA
V
CE
=–12V, I
E
=2A
V
CB
=–10V, f=1MHz
2SB1560
–100
max
–100
max
–150
min
5000
min
–2.5
max
–3.0
max
50
typ
230
typ
V
V
MHz
pF
20.0min
4.0max
3
B
Equivalent circuit
C
Silicon PNP Epitaxial Planar Transistor
(Complement to type 2SD2390)
Application :
Audio, Series Regulator and General Purpose
(Ta=25°C)
Unit
5.0
±0.2
1.8
External Dimensions
MT-100(TO3P)
15.6
±0.4
9.6
2.0
4.8
±0.2
2.0
±0.1
µ
A
µ
A
19.9
±0.3
V
4.0
a
b
ø3.2
±0.1
2
1.05
+0.2
-0.1
5.45
±0.1
B
C
E
5.45
±0.1
0.65
+0.2
-0.1
1.4
∗h
FE
Rank O(5000 to 12000), P(6500 to 20000), Y(15000 to 30000)
s
Typical Switching Characteristics (Common Emitter)
V
CC
(V)
–70
R
L
(Ω)
10
I
C
(A)
–7
V
BB1
(V)
–10
V
BB2
(V)
5
I
B1
(mA)
–7
I
B2
(mA)
7
t
on
(
µ
s)
0.8typ
t
stg
(
µ
s)
3.0typ
t
f
(
µ
s)
1.2typ
Weight : Approx 6.0g
a. Type No.
b. Lot No.
I
C
– V
CE
Characteristics
(Typical)
mA
V
C E
( sat ) – I
B
Characteristics
(Typical)
C o l l e c to r - E m i t t er S a t ur a t i o n Vo l ta g e V
CE (sat )
(V )
–3
I
C
– V
B E
Temperature Characteristics
(Typical)
–1 0
( V
CE
=– 4 V )
–10
–2
.5
mA
mA
–2.0
–10
–1 .5 m A
–1 .2m A
C ol l e c t o r C ur r en t I
C
( A)
–1. 0mA
–2
–6
–0.8 mA
–0.6 mA
C o l l ec t or C u r r e n t I
C
( A )
–8
–8
–6
–1 0A
– 7A
I
C
= – 5A
–1
125˚
C (C
ase T
emp
)
I
B
=–0.4mA
Temp
(Case
25˚C
–4
–4
0
0
–2
–4
–6
0
–0.2
–0.5 –1
–5
–10
–50 –100 –200
0
0
–1
–30˚C
–2
–2
(Case
Temp
)
)
–2
–2.5
Co l l ect or - Emi t t e r V ol tag e V
C E
(V )
Ba s e Cu r r en t I
B
( m A)
B as e- Em i t t or V o l t a g e V
BE
( V )
(V
C E
=– 4 V )
40,000
DC C u r r e nt Ga i n h
FE
DC C u r r e nt Ga i n h
FE
50000
( V
C E
= –4 V)
Transient Thermal Resistance
θ
j -a
(˚ C/ W )
h
F E
– I
C
Characteristics
(Typical)
h
F E
– I
C
Temperature Characteristics
(Typical)
θ
j - a
– t Characteristics
3
12 5 ˚ C
10000
5000
Typ
10,000
5,000
2 5˚ C
– 3 0˚ C
1
0.5
1000
1,000
–0.2
–0 . 5
–1
C ol l ec t or C u rre nt I
C
(A )
–5
–10
500
–0.2
– 0. 5
–1
C o ll e ct o r Cu r r e nt I
C
( A)
–5
– 10
0.1
1
5
10
50 100
Time t(ms)
50 0 1 0 00 2 0 0 0
f
T
– I
E
Characteristics
(Typical)
(V
C E
= –1 2 V )
100
–30
Safe Operating Area
(Single Pulse)
10 0
Pc – Ta Derating
80
Cut- off Fr e q u e n c y f
T
(M H
Z
)
Co llec to r C u r r e n t I
C
( A)
–10
–5
10
DC
0m
m
s
s
M ax im um P ow e r Di s s i p a ti o n P
C
( W )
10
W
ith
In
fin
60
Typ
ite
he
–1
–0.5
Without Heatsink
Natural Cooling
–0.1
50
at
si
nk
40
20
0
0.02
0.05 0 . 1
0. 5
1
5
10
– 0 .0 5
–3
–5
–1 0
–5 0
– 10 0
–2 00
3. 5
0
W i t h o ut H e at s i n k
0
25
50
75
100
1 25
1 50
Emi t t e r Curre nt I
E
(A )
C ol l e ct or - Em i t te r Vol t ag e V
C E
( V)
Am b i e n t T e m pe r a t u r e T a( ˚ C )
47