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2SB1383_07 参数 Datasheet PDF下载

2SB1383_07图片预览
型号: 2SB1383_07
PDF下载: 下载PDF文件 查看货源
内容描述: PNP硅外延平面晶体管 [Silicon PNP Epitaxial Planar Transistor]
分类和应用: 晶体晶体管
文件页数/大小: 1 页 / 30 K
品牌: SANKEN [ SANKEN ELECTRIC ]
   
(2 k
Ω)
(80Ω) E
Darlington
s
Absolute maximum ratings
(Ta=25°C)
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
Tj
T
stg
Ratings
–120
–120
–6
–25(
Pulse
–40)
–2
120(Tc=25°C)
150
–55 to +150
Unit
V
V
V
A
A
W
°C
°C
2SB1383
s
Electrical Characteristics
Symbol
I
CBO
I
EBO
V
(BR)CEO
h
FE
V
CE
(sat)
V
BE
(sat)
f
T
C
OB
Conditions
V
CB
=–120V
V
EB
=–6V
I
C
=–25mA
V
CE
=–4V, I
C
=–12A
I
C
=–12A, I
B
=–24mA
I
C
=–12A, I
B
=–24mA
V
CE
=–12V, I
E
=1A
V
CB
=–10V, f=1MHz
Ratings
–10
max
–10
max
–120
min
2000
min
–1.8
max
–2.5
max
50
typ
230
typ
V
MHz
pF
5.45
±0.1
B
C
E
20.0min
4.0max
B
Equivalent circuit
C
Silicon PNP Epitaxial Planar Transistor
(Complement to type 2SD2083)
Application :
Chopper Regulator, DC Motor Driver and General Purpose
(Ta=25°C)
Unit
External Dimensions
MT-100(TO3P)
5.0
±0.2
15.6
±0.4
9.6
2.0
1.8
4.8
±0.2
2.0
±0.1
µ
A
mA
V
19.9
±0.3
4.0
a
b
ø3.2
±0.1
V
2
3
1.05
+0.2
-0.1
5.45
±0.1
0.65
+0.2
-0.1
1.4
s
Typical Switching Characteristics (Common Emitter)
V
CC
(V)
–24
R
L
(Ω)
2
I
C
(A)
–12
V
BB1
(V)
–10
V
BB2
(V)
5
I
B1
(mA)
–24
I
B2
(mA)
24
t
on
(
µ
s)
1.0typ
t
stg
(
µ
s)
3.0typ
t
f
(
µ
s)
1.0typ
Weight : Approx 6.0g
a. Part No.
b. Lot No.
I
C
– V
C E
Characteristics
(Typical)
C o l l e c t o r - E m i t te r S a tu r a t i o n Vo lt a g e V
C E( sat)
(V )
–25
–8
.0
mA
– 6 .0 m A
V
C E
( sat ) – I
B
Characteristics
(Typical)
–3
I
C
– V
B E
Temperature Characteristics
(Typical)
–25
( V
CE
= – 4V )
C o l l e c t o r Cu r r e n t I
C
( A)
–4 .0 m A
–2
I
C
= – 25 A
C ol l e c t o r C ur r e nt I
C
( A )
–20
–20
–15
–15
mp
Te
)
–2.5 mA
em
eT
Cas
–30
˚C (
p)
Cas
12
–1.0mA
–5
–5
I
B
=–0.6mA
0
0
–1
–2
–3
–4
–5
–6
0
– 0 . 5 –1
–10
Ba se C u r r e nt I
B
( m A)
–100
–500
0
0
–1
25˚
C(
–6 A
5˚C
–1
–2
eT
–10
– 12 A
–1.5mA
–10
(Ca
se
emp
)
– 2 .6
C ol l e ct or - Em it t e r V ol ta ge V
C E
(V )
B as e - Em i t t o r Vo l t a g e V
B E
( V )
( V
C E
=– 4 V)
20000
DC C ur re nt Ga i n h
FE
10000
20000
DC C ur re nt Ga i n h
FE
10000
5000
12
5˚C
2
5˚C
( V
C E
= – 4V)
Transient Thermal Resistance
θ
j -a
( ˚C / W )
h
F E
– I
C
Characteristics
(Typical)
h
F E
– I
C
Temperature Characteristics
(Typical)
θ
j - a
– t Characteristics
2
Typ
5000
1
0. 5
–30
˚C
1000
500
200
–0.2
1000
500
200
–0.2
–0.5
–1
–5
– 10
–40
– 0 .5
–1
–5
–10
– 40
0. 1
1
10
Time t(ms)
1 00
1000
C ol l ec t or C urre nt I
C
(A)
Co l le c to r C ur r en t I
C
( A)
f
T
– I
E
Characteristics
(Typical)
( V
C E
=– 1 2 V )
60
–100
Safe Operating Area
(Single Pulse)
120
Pc – Ta Derating
50
Cut- o ff Fr e q u en c y f
T
( M H
Z
)
1m
M ax im u m P o we r D i s s i p a t i o n P
C
( W )
Typ
–50
100
W
ith
10
C oll ec to r Cu rr en t I
C
(A )
s
m
40
–10
–5
DC
In
s
fin
ite
he
30
at
si
nk
50
20
–1
–0.5
Without Heatsink
Natural Cooling
10
0
0.1
0.5
1
5
10
–0.2
–3
–5
–1 0
–50
–1 00
–2 0 0
3.5
0
W i t h o ut H e at s i n k
0
25
50
75
100
12 5
15 0
Em i t t er C urre nt I
E
(A)
Co l l ec to r - Em i tt er Vo l ta g e V
C E
( V)
Am bi e nt T e m p e r a t u r e T a ( ˚ C )
45