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2SB1382_07 参数 Datasheet PDF下载

2SB1382_07图片预览
型号: 2SB1382_07
PDF下载: 下载PDF文件 查看货源
内容描述: PNP硅外延平面晶体管 [Silicon PNP Epitaxial Planar Transistor]
分类和应用: 晶体晶体管
文件页数/大小: 1 页 / 31 K
品牌: SANKEN [ SANKEN ELECTRIC ]
   
(2 k
Ω)
(80Ω) E
Darlington
s
Absolute maximum ratings
(Ta=25°C)
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
Tj
T
stg
Ratings
–120
–120
–6
–16(
Pulse
–26)
–1
75(Tc=25°C)
150
–55 to +150
Unit
V
V
V
A
A
W
°C
°C
2SB1382
s
Electrical Characteristics
Symbol
I
CBO
I
EBO
V
(BR)CEO
h
FE
V
CE
(sat)
V
BE
(sat)
f
T
C
OB
Conditions
V
CB
=–120V
V
EB
=–6V
I
C
=–10mA
V
CE
=–4V, I
C
=–8A
I
C
=–8A, I
B
=–16mA
I
C
=–8A, I
B
=–16mA
V
CE
=–12V, I
E
=1A
V
CB
=–10V, f=1MHz
Ratings
–10
max
–10
max
–120
min
2000
min
–1.5
max
–2.5
max
50
typ
350
typ
V
V
16.2
B
Equivalent circuit
C
Silicon PNP Epitaxial Planar Transistor
(Complement to type 2SD2082)
Application :
Chopper Regulator, DC Motor Driver and General Purpose
(Ta=25°C)
Unit
External Dimensions
FM100(TO3PF)
0.8
±0.2
15.6
±0.2
5.5
±0.2
3.45
±0.2
5.5
ø3.3
±0.2
1.6
µ
A
mA
23.0
±0.3
V
9.5
±0.2
a
b
MHz
pF
1.75
2.15
1.05
+0.2
-0.1
5.45
±0.1
1.5
4.4
5.45
±0.1
1.5
0.65
+0.2
-0.1
3.3
0.8
s
Typical Switching Characteristics (Common Emitter)
V
CC
(V)
–40
R
L
(Ω)
5
I
C
(A)
–8
V
BB1
(V)
–10
V
BB2
(V)
5
I
B1
(mA)
–16
I
B2
(mA)
16
t
on
(
µ
s)
0.8typ
t
stg
(
µ
s)
1.8typ
t
f
(
µ
s)
1.0typ
3.35
B
C
E
Weight : Approx 6.5g
a. Part No.
b. Lot No.
I
C
– V
CE
Characteristics
(Typical)
C o l l ec t or - Em i t t e r Sa t u r at i on V ol t ag e V
C E(s at)
( V )
–26
–2
V
CE
( sat ) – I
B
Characteristics
(Typical)
–3
I
C
– V
B E
Temperature Characteristics
(Typical)
–1 6
( V
C E
= –4 V )
–4
0m
0m
A
A
–12m
A
–20
C ol l e c t o r C u r r e nt I
C
( A )
–6 m A
C o l l e c t o r Cu r r e n t I
C
( A)
–1 2
–2
I
C
= –1 6A
Tem
125
–4
0
0
–1
–2
–3
–4
–5
–6
0
– 0 .5
–1
–10
Bas e C u r r e nt I
B
( m A)
–100
0
0
–1
Ba s e - E m i tt o r V ol t ag e V
B E
( V )
25˚C
–1
–4A
˚C
–10
I
B
=–1. 5mA
–8A
(Ca
se
–8
(Ca
se T
emp
–30˚
)
C (C
ase
Tem
p)
–3 mA
p)
–2
3.0
–2.4
C o l l ect o r - Em i t t er V ol ta ge V
C E
( V)
h
F E
– I
C
Characteristics
(Typical)
(V
C E
= – 4 V )
20000
DC C ur re nt Ga i n h
F E
10000
DC C ur re nt Ga i n h
F E
h
F E
– I
C
Temperature Characteristics
(Typical)
( V
C E
= –4 V)
20000
10000
Transient Thermal Resistance
θ
j -a
(˚ C/ W )
3
θ
j - a
– t Characteristics
Typ
5000
12
5000
5˚C
25
˚C
0˚C
1
–3
0.5
1000
500
–0.3
1000
500
– 0 .3
–0.5
–1
–5
–1 0
–16
–0.5
–1
–5
–1 0
–16
0.2
1
10
Time t(ms)
100
1 00 0
C o ll e ct o r C ur ren t I
C
(A)
C ol l ec t or C ur r en t I
C
( A)
f
T
– I
E
Characteristics
(Typical)
100
(V
C E
= –12 V)
–50
Safe Operating Area
(Single Pulse)
80
1m
Pc – Ta Derating
10
s
Typ
C ut- off Fr eq u e n c y f
T
( M H
Z
)
–10
Co lle cto r C u r r e n t I
C
( A )
DC
m
s
M ax im um P ow er Di s s i p a t i o n P
C
( W )
10
0
µ
s
60
W
ith
–5
In
fin
ite
he
50
at
–1
–0.5
Without Heatsink
Natural Cooling
–0.1
40
si
nk
20
0
0.05 0.1
0.5
1
5
10
16
–0.05
–0.03
–3
W i t h ou t H e at s i n k
–5
– 10
–5 0
– 10 0
–2 00
3 .5
0
0
50
1 00
150
Em i t t er C urr en t I
E
(A )
Col l ec t or - Em i t te r Vol t ag e V
C E
( V)
Am b i e n t T em p er at u r e T a ( ˚ C )
44