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2SB1257_07 参数 Datasheet PDF下载

2SB1257_07图片预览
型号: 2SB1257_07
PDF下载: 下载PDF文件 查看货源
内容描述: PNP硅外延平面晶体管 [Silicon PNP Epitaxial Planar Transistor]
分类和应用: 晶体晶体管
文件页数/大小: 1 页 / 31 K
品牌: SANKEN [ SANKEN ELECTRIC ]
   
(2 k
Ω)(6
5 0Ω) E
Darlington
s
Absolute maximum ratings
(Ta=25°C)
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
Tj
T
stg
Ratings
–60
–60
–6
–4(
Pulse
–6)
–1
25(Tc=25°C)
150
–55 to +150
Unit
V
V
V
A
A
W
°C
°C
2SB1257
s
Electrical Characteristics
Symbol
I
CBO
I
EBO
V
(BR)CEO
h
FE
V
CE
(sat)
V
BE
(sat)
f
T
C
OB
Conditions
V
CB
=–60V
V
EB
=–6V
I
C
=–10mA
V
CE
=–4V, I
C
=–3A
I
C
=–3A, I
B
=–6mA
I
C
=–3A, I
B
=–6mA
V
CE
=–12V, I
E
=0.2A
V
CB
=–10V, f=1MHz
Ratings
–10
max
–10
max
–60
min
2000
min
–1.5
max
–2
max
150
typ
75
typ
V
V
16.2
B
Equivalent circuit
C
Silicon PNP Epitaxial Planar Transistor
(Complement to type 2SD2014)
Application :
Driver for Solenoid, Relay and Motor and General Purpose
(Ta=25°C)
Unit
External Dimensions
FM20(TO220F)
0.8
±0.2
15.6
±0.2
5.5
±0.2
3.45
±0.2
5.5
ø3.3
±0.2
1.6
µ
A
µ
A
V
23.0
±0.3
9.5
±0.2
a
b
MHz
pF
1.75
2.15
1.05
+0.2
-0.1
5.45
±0.1
1.5
4.4
5.45
±0.1
1.5
0.65
+0.2
-0.1
3.3
0.8
s
Typical Switching Characteristics (Common Emitter)
V
CC
(V)
–30
R
L
(Ω)
10
I
C
(A)
–3
V
BB1
(V)
–10
V
BB2
(V)
5
I
B1
(mA)
–10
I
B2
(mA)
10
t
on
(
µ
s)
0.4typ
t
stg
(
µ
s)
0.8typ
t
f
(
µ
s)
0.6typ
3.35
B
C
E
Weight : Approx 2.0g
a. Part No.
b. Lot No.
I
C
– V
CE
Characteristics
(Typical)
–6
3m
m
–1.8
V
CE
(sat) – I
B
Characteristics
(Typical)
C o l l e c to r - E m i t t er S a t ur a t i o n Vo l ta g e V
CE (sat)
( V )
–3
I
C
– V
B E
Temperature Characteristics
(Typical)
–4
( V
C E
= – 2V )
A
A
I
B
–5
C ol l e c t o r C u r r e nt I
C
( A)
=–
2.
–1 .5 m A
–1. 2m A
C o l l ec t or C u r r e n t I
C
( A )
–3
–4
–1.0mA
–2
Tem
Temp
ase
–3 A
–1
I
C
= – 1 A
– 2A
(Case
–2
125˚
–1
0
0
–1
–2
–3
–4
–5
–6
–0.6
–0.2
–0.5
–1
–5
–10
–50
0
0
–1
Ba s e - E m i t to r V ol t ag e V
BE
( V)
–30˚C
–1
25˚C
(Case
C (C
Temp
–3
)
–0.8mA
p)
–2
)
– 2 –2 . 2
C o l le ct o r - Em i t t er Vo l t ag e V
C E
(V)
Ba s e Cu r r en t I
B
( m A)
(V
C E
= – 2 V)
8000
5000
D C Cu rr en t Ga i n h
FE
8000
( V
C E
= – 2V)
5000
D C Cu rr en t Ga i n h
FE
Transient Thermal Resistance
θ
j- a
(˚ C/ W )
h
FE
– I
C
Characteristics
(Typical)
Typ
h
F E
– I
C
Temperature Characteristics
(Typical)
θ
j- a
– t Characteristics
5
1000
500
1000
500
12
5˚C
25
˚C
–3
100
50
0˚C
100
50
20
–0.02
–0 . 1
– 0. 5
–1
–5 –6
1
0 .7
20
–0.02
– 0 . 0 5 – 0. 1
–0 .5
–1
–5 –6
1
10
Time t(ms)
100
3.0
1000
Col l e ct o r C u rr en t I
C
(A )
C ol l ec t or C ur r en t I
C
( A)
f
T
– I
E
Characteristics
(Typical)
240
(V
C E
=– 1 2 V )
–10
Safe Operating Area
(Single Pulse)
25
P c – Ta Derating
Natural Cooling
Silicone Grease
Heatsink: Aluminum
in mm
200
Cu t-o ff Fre q u e n c y f
T
(M H
Z
)
Co llec to r C u r r e n t I
C
( A)
M a xim u m P o we r D i s s i p a t i o n P
C
( W )
–5
10
m
DC
1m
s
20
s
Typ
160
W
ith
In
120
–1
150x150x2
1 0 0x
1 0
10
0x
fin
ite
he
– 0 .5
2
at
si
nk
80
40
– 0 .1
0
0.05
0.1
0.5
1
4
–0.07
–3
Without Heatsink
Natural Cooling
50x50x2
W i t h o ut H e at s i n k
2
0
–5
– 10
– 70
0
25
50
75
100
1 25
1 50
Em it t e r Cu rre nt I
E
(A )
Co l l ec to r - Em i tt er Vo l ta g e V
C E
( V)
Am b i e n t T e m pe r a t u r e T a( ˚ C )
39