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2SB1259 参数 Datasheet PDF下载

2SB1259图片预览
型号: 2SB1259
PDF下载: 下载PDF文件 查看货源
内容描述: PNP硅外延平面型晶体管(用于驱动电磁阀,继电器,电机和通用) [Silicon PNP Epitaxial Planar Transistor(Driver for Solenoid, Relay and Motor and General Purpose)]
分类和应用: 晶体继电器晶体管开关电机驱动局域网
文件页数/大小: 1 页 / 28 K
品牌: SANKEN [ SANKEN ELECTRIC ]
   
(3 k
Ω)(1
0 0Ω) E
Darlington
s
Absolute maximum ratings
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
Tj
T
stg
2SB1259
–120
–120
–6
–10(
Pulse
–15)
–1
30(Tc=25°C)
150
–55 to +150
(Ta=25°C)
Unit
V
V
V
A
A
W
°C
°C
2SB1259
s
Electrical Characteristics
Symbol
I
CBO
I
EBO
V
(BR)CEO
h
FE
V
CE
(sat)
V
BE
(sat)
f
T
C
OB
Conditions
V
CB
=–120V
V
EB
=–6V
I
C
=–10mA
V
CE
=–4V, I
C
=–5A
I
C
=–5A, I
B
=–10mA
I
C
=–5A, I
B
=–10mA
V
CE
=–12V, I
E
=0.2A
V
CB
=–10V, f=1MHz
2SB1259
–10
max
–10
max
–120
min
2000
min
–1.5
max
–2.0
max
100typ
145typ
V
V
13.0min
B
Equivalent circuit
C
Silicon PNP Epitaxial Planar Transistor
(Complement to type 2SD2081)
Application :
Driver for Solenoid, Relay and Motor and General Purpose
(Ta=25°C)
Unit
External Dimensions
FM20(TO220F)
4.0
±0.2
10.1
±0.2
4.2
±0.2
2.8 c0.5
µ
A
V
16.9
±0.3
8.4
±0.2
mA
MHz
pF
1.35
±0.15
1.35
±0.15
0.85
+0.2
-0.1
0.45
+0.2
-0.1
2.54
2.2
±0.2
2.4
±0.2
s
Typical Switching Characteristics (Common Emitter)
V
CC
(V)
–30
R
L
(Ω)
10
I
C
(A)
–3
V
BB1
(V)
–10
V
BB2
(V)
5
I
B1
(mA)
–6
I
B2
(mA)
6
t
on
(
µ
s)
0.6typ
t
stg
(
µ
s)
1.6typ
t
f
(
µ
s)
0.5typ
2.54
3.9
B C E
±0.2
0.8
±0.2
a
b
ø3.3
±0.2
Weight : Approx 2.0g
a. Type No.
b. Lot No.
I
C
– V
C E
Characteristics
(Typical)
C o l l ec t or - Em i t t e r Sa t u r at i on V ol t ag e V
C E(s at)
( V )
–15
V
CE
( sat ) – I
B
Characteristics
(Typical)
–3
I
C
– V
B E
Temperature Characteristics
(Typical)
–10
( V
C E
= –4 V )
0m
–5
–2
0m
A
–1
0m
A
A
–5m
A
C ol l e c t o r C u r r e nt I
C
( A )
–3m
A
–10
–2mA
–2
C o l l e c t o r Cu r r e n t I
C
( A)
–8
–6
Temp
)
p)
(Cas
e
Tem
I
C
= – 10 A
–5 A
– 1A
–5
–1
125˚C
25˚C
–2
0
0
–1
–2
–3
–4
–5
–6
0
– 0 .2
–1
–10
–100
–1000
0
0
–1
B a s e - E m i tt o r Vo l ta g e V
B E
( V)
–30˚C
(Case
–4
(Case
I
B
=–1mA
Temp
)
–2 –2.2
Co l l ect o r - Em i t t er Vo l tag e V
C E
(V)
Bas e C ur r e nt I
B
( m A)
h
F E
– I
C
Characteristics
(Typical)
(V
C E
= – 4 V )
20000
10000
DC C ur re nt Ga i n h
F E
5000
h
F E
– I
C
Temperature Characteristics
(Typical)
Transient Thermal Resistance
θ
j- a
( ˚ C /W )
( V
C E
= –4 V)
20000
10000
DC C ur re nt Ga i n h
F E
5000
12
5˚C
˚C
25
θ
j - a
– t Characteristics
5
Typ
1000
500
1000
500
–3
0˚C
1
100
50
100
50
–0.03
0. 5
0. 3
–0.1
–0. 5
–1
–5
–10
20
– 0 .0 2
–0 .1
–0 .5
–1
–5
–1 0
1
10
Time t(ms)
1 00
1 0 00
Co l le ct o r Curre nt I
C
(A)
C o ll e ct o r Cu r r e n t I
C
( A)
f
T
– I
E
Characteristics
(Typical)
( V
C E
=– 1 2 V )
200
–20
Safe Operating Area
(Single Pulse)
30
Pc – Ta Derating
C ut- off Fr eq u e n c y f
T
( M H
Z
)
–5
Co lle cto r C u r r e n t I
C
( A )
DC
M ax im um P ow er Di s s i p a t i o n P
C
( W )
Typ
–10
1m
Natural Cooling
Silicone Grease
Heatsink: Aluminum
in mm
20
10
0
µ
s
10
m
s
s
W
ith
In
100
–1
–0.5
Without Heatsink
Natural Cooling
–0.1
fin
1 50 x 15 0 x 2
1 0 0 x 1 0 0x 2
10
50x50x2
ite
he
at
si
nk
–0.05
0
0.05
0.1
0.5
1
5
10
–0.03
–3
–5
–1 0
–5 0
– 10 0
– 2 00
W i t h o ut H e at s i n k
2
0
0
25
50
75
1 00
125
150
Em i t t er C urre nt I
E
(A )
Col l ec t or - Em i tt e r Vol t ag e V
C E
( V)
A m b i en t T e m p e r a t ur e T a ( ˚ C )
40