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2SA1909O 参数 Datasheet PDF下载

2SA1909O图片预览
型号: 2SA1909O
PDF下载: 下载PDF文件 查看货源
内容描述: [暂无描述]
分类和应用: 晶体晶体管功率双极晶体管局域网
文件页数/大小: 1 页 / 27 K
品牌: SANKEN [ SANKEN ELECTRIC ]
   
2SA1909
Silicon PNP Epitaxial Planar Transistor
(Complement to type 2SC5101)
s
Absolute maximum ratings
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
Tj
T
stg
2SA1909
–140
–140
–6
–10
–4
80(Tc=25°C)
150
–55 to +150
(Ta=25°C)
Unit
V
V
V
A
A
W
°C
°C
Application :
Audio and General Purpose
(Ta=25°C)
2SA1909
–10
max
–10
max
–140
min
50
min
–0.5
max
20
typ
400
typ
V
MHz
16.2
s
Electrical Characteristics
Symbol
I
CBO
I
EBO
V
(BR)CEO
h
FE
V
CE
(sat)
f
T
C
OB
Conditions
V
CB
=–140V
V
EB
=–6V
I
C
=–50mA
V
CE
=–4V, I
C
=–3A
I
C
=–5A, I
B
=–0.5A
V
CE
=–12V, I
E
=0.5A
V
CB
=–10V, f=1MHz
External Dimensions
FM100(TO3PF)
0.8
±0.2
15.6
±0.2
5.5
±0.2
3.45
±0.2
5.5
ø3.3
±0.2
1.6
Unit
µ
A
23.0
±0.3
V
9.5
±0.2
µ
A
a
b
pF
1.75
2.15
1.05
+0.2
-0.1
5.45
±0.1
1.5
4.4
5.45
±0.1
1.5
0.65
+0.2
-0.1
3.3
0.8
∗h
FE
Rank O(50 to 100), P(70 to 140), Y(90 to 180)
s
Typical Switching Characteristics (Common Emitter)
V
CC
(V)
–60
R
L
(Ω)
12
I
C
(A)
–5
V
BB1
(V)
–10
V
BB2
(V)
5
I
B1
(A)
–0.5
I
B2
(A)
0.5
t
on
(
µ
s)
0.17typ
t
stg
(
µ
s)
1.86typ
t
f
(
µ
s)
0.27typ
3.35
B
C
E
Weight : Approx 6.0g
a. Type No.
b. Lot No.
I
C
– V
CE
Characteristics
(Typical)
–10
–4
00
V
C E
(sat ) – I
B
Characteristics
(Typical)
–3
C ol l e c t o r - E m i t te r S at u r a t i o n Vo lt a g e V
C E(s at)
( V)
I
C
– V
BE
Temperature Characteristics
(Typical)
–10
( V
C E
= –4 V )
mA
–3
00
mA
–2
00
mA
–15
0m
A
C ol l e c t o r C u r r e nt I
C
( A )
–100
mA
–75mA
–2
–6
C o l l e c t o r C u r r e nt I
C
( A )
–8
–8
–6
–50mA
–4
–25mA
mp)
(Ca
e Te
se
–1
25˚C
125
I
B
=–10mA
–5 A
0
0
–0 .5
– 1 .0
– 1 .5
–2 . 0
0
0
0
0
–1
–2
–3
–4
–30˚C
I
C
= –1 0A
–2
˚C
–2
(Case
(Cas
Temp
–4
Tem
p)
–1
Ba s e - E m i tt o r V ol t ag e V
B E
( V)
)
Co ll e ct o r- Em i t t er Vo l ta ge V
C E
( V)
Ba s e Cu r r en t I
B
( A )
h
FE
– I
C
Characteristics
(Typical)
(V
C E
= – 4 V )
200
DC C ur re nt Ga i n h
FE
h
F E
– I
C
Temperature Characteristics
(Typical)
( V
C E
= –4 V)
200
DC C ur r e nt Ga i n h
FE
12 5˚ C
100
25 ˚ C
–3 0 ˚ C
50
Transient Thermal Resistance
θ
j -a
( ˚C /W )
3
θ
j - a
– t Characteristics
Typ
100
1
0.5
50
30
–0.02
– 0. 1
–0 .5
–1
–5
–10
20
– 0 .0 2
–0 .1
–0 . 5
–1
–5
–1 0
0.1
1
10
1 00
Time t(ms)
10 0 0 2 0 00
Co l le ct o r Curre nt I
C
(A)
Co l le c to r Cu r r e n t I
C
( A)
f
T
– I
E
Characteristics
(Typical)
(V
C E
=– 1 2 V )
30
–30
Safe Operating Area
(Single Pulse)
80
Pc – Ta Derating
Cu t-o ff F r e q u e n c y f
T
( M H
Z
)
–10
M ax im um P o we r D i s s i p a t i o n P
C
( W )
60
Co llec to r C u r r e nt I
C
( A)
20
–5
D
Typ
C
40
–1
–0.5
Without Heatsink
Natural Cooling
10
20
Without Heatsink
0
0. 02
0. 1
1
10
–0.1
–3
–5
– 10
–5 0
– 10 0
– 20 0
3. 5
0
0
25
50
75
100
1 25
1 50
Emi t t e r C ur ren t I
E
(A )
C ol l ec t or - Em i tt e r Vol t ag e V
C E
( V)
Am b i e n t T e m pe r a t u r e T a( ˚ C )
3.0
–1.5
10
W
10
0m
s
ms
ith
In
fin
ite
he
at
si
nk
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