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2SA1860P 参数 Datasheet PDF下载

2SA1860P图片预览
型号: 2SA1860P
PDF下载: 下载PDF文件 查看货源
内容描述: [Power Bipolar Transistor, 14A I(C), 150V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3 Pin, FM100, TO-3PF, 3 PIN]
分类和应用: 晶体晶体管功率双极晶体管放大器局域网
文件页数/大小: 1 页 / 28 K
品牌: SANKEN [ SANKEN ELECTRIC ]
   
LAPT
2SA1860
Application :
Audio and General Purpose
(Ta=25°C)
2SA1860
–100
max
–100
max
–150
min
50
min
–2.0
max
50
typ
400
typ
V
MHz
16.2
Silicon PNP Epitaxial Planar Transistor
(Complement to type 2SC4886)
s
Absolute maximum ratings
(Ta=25°C)
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
Tj
T
stg
2SA1860
–150
–150
–5
–14
–3
80(Tc=25°C)
150
–55 to +150
Unit
V
V
V
A
A
W
°C
°C
s
Electrical Characteristics
Symbol
I
CBO
I
EBO
V
(BR)CEO
h
FE
V
CE
(sat)
f
T
C
OB
Conditions
V
CB
=–150V
V
EB
=–5V
I
C
=–25mA
V
CE
=–4V, I
C
=–5A
I
C
=–5A, I
B
=–500mA
V
CE
=–12V, I
E
=2A
V
CB
=–10V, f=1MHz
External Dimensions
FM100(TO3PF)
0.8
±0.2
15.6
±0.2
5.5
±0.2
3.45
±0.2
5.5
ø3.3
±0.2
1.6
Unit
µ
A
23.0
±0.3
V
9.5
±0.2
µ
A
a
b
pF
1.75
2.15
1.05
+0.2
-0.1
5.45
±0.1
1.5
4.4
5.45
±0.1
1.5
0.65
+0.2
-0.1
3.3
0.8
∗h
FE
Rank O(50 to 100), P(70 to 140), Y(90 to 180)
s
Typical Switching Characteristics (Common Emitter)
V
CC
(V)
–60
R
L
(Ω)
12
I
C
(A)
–5
V
BB1
(V)
–10
V
BB2
(V)
5
I
B1
(mA)
–500
I
B2
(mA)
500
t
on
(
µ
s)
0.25typ
t
stg
(
µ
s)
0.85typ
t
f
(
µ
s)
0.2typ
3.35
B
C
E
Weight : Approx 6.5g
a. Type No.
b. Lot No.
I
C
– V
CE
Characteristics
(Typical)
–14
C o l l e c t o r - E m i t te r S a tu r a t i o n Vo lt a g e V
C E( sat)
( V )
A
m
mA
mA
mA
00
500
400
00
6
–3
V
CE
( sat) – I
B
Characteristics
(Typical)
–3
I
C
– V
B E
Temperature Characteristics
(Typical)
–14
( V
CE
=– 4 V )
00
mA
–7
–200
mA
C o l l e c t o r C u r r e nt I
C
( A )
–150mA
–10
–10 0m A
C ol l e c t o r C ur r e nt I
C
( A)
–10
–2
p)
Tem
p)
Tem
se
–5
–50mA
–1
I
C
= – 1 0A
–5 A
–5
ase
C (C
125
25˚
I
B
=–20mA
0
0
–1
–2
–3
–4
0
0
–0.2
–0 .4
–0 .6
– 0. 8
– 1. 0
0
0
–30
–1
B a s e - Em i t t o r Vo l t a g e V
B E
( V)
˚C (
C
˚C
ase
(Ca
Tem
p)
Co l l ec t or - Emi t t e r V ol ta ge V
C E
( V)
Ba s e C ur r en t I
B
( A)
(V
C E
= – 4 V )
200
DC C u r r e nt Ga i n h
FE
D C C u r r e n t G ai n h
FE
( V
C E
= –4 V)
200
12 5˚ C
Transient Thermal Resistance
θ
j- a
(˚ C/ W )
h
FE
– I
C
Characteristics
(Typical)
h
F E
– I
C
Temperature Characteristics
(Typical)
θ
j- a
– t Characteristics
3
100
Typ
100
25 ˚ C
– 30 ˚ C
1
0.5
50
50
20
–0. 02
–0 . 1
–0.5
–1
–5
–10 –14
30
– 0 .0 2
– 0. 1
–0 . 5
–1
–5
–10 –14
0.1
1
10
10 0
Time t(ms)
1 0 0 0 2 00 0
C ol l ec t or C u rre nt I
C
(A)
C ol l ec t or C ur r en t I
C
( A)
f
T
– I
E
Characteristics
(Typical)
(V
C E
= –1 2 V)
80
–40
Safe Operating Area
(Single Pulse)
80
1m
s
P c – Ta Derating
C ut- off F r e q u e n c y f
T
( M H
Z
)
–10
60
C oll ec tor Cu r r e n t I
C
(A )
10
m
D
C
0m
s
Ma x im um P ow e r D i s s i p a t i on P
C
( W )
10
s
60
Typ
–5
40
40
–1
–0.5
Without Heatsink
Natural Cooling
–0.1
20
20
Without Heatsink
–5
–10
– 50
– 10 0
–2 00
3.5
0
0
25
50
75
10 0
125
150
0
0.02
0. 1
1
10
– 0 .0 5
–2
Emi t t e r C ur ren t I
E
(A )
C ol l ec t or - Em i tt e r Vol t ag e V
C E
( V)
A m b i e n t T e m p e r a tu r e T a ( ˚ C )
34
3.0
–2
W
ith
In
fin
ite
he
at
si
nk